Page 1
Millimeter
Millimeter
Min. Max. Min. Max.
A 7.90 8.10 M - 1.50
B 9.45 9.65 N 0.75 0.95
C 9.87 10.47 O 0.66 0
.86
D - 11.50 P 13.50 14.50
E 1.06 1.46 Q 2.44 3.44
F 2.60 3.00 R 3.50 3.70
G 6.30 6.70 S 1.15 1.45
H 8.35 8.75 T 4.30 4.70
I 14.7 15.3 U - 2.7
J 1.60 Typ.
V
1.89 3.09
K 1.10 1.30 W 0.40 0.60
L 1.17 1.37 X 2.60 3.60
TO-220P
I
F
M
Q
Q
U
V
B
R
T
S
P
X
K
2
3
1
C
A
D
E
G
H
J
L
N
O
W
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
Low R
provides higher efficiency and
DS(on)
extends battery life.
Low thermal impedance copper leadframe
TO-220P saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
SSE70N10-44P
70A , 100V , R
N-Channel Enhancement Mode MOSFET
N-Channel
D2
REF.
DS(ON)
44mΩΩΩΩ
REF.
G
1
S
3
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1 TC=25°C ID 70 A
Pulsed Drain Current 2 IDM 390 A
Continuous Source Current (Diode Conduction) 1 IS 110 A
Power Dissipation 1 TC=25°C PD 300 W
Operating Junction and Storage Temperature Range TJ, T
Maximum Junction to Ambient 1 R
Maximum Junction to Case R
Notes:
1 Package Limited.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Nov-2011 Rev. A Page 1 of 2
(TA=25°C unless otherwise specified)
STG
Thermal Resistance Rating
θJA
0.5
θJC
-55~175 °C
62.5
°C / W
Page 2
SSE70N10-44P
70A , 100V , R
Elektronische Bauelemente
N-Channel Enhancement Mode MOSFET
DS(ON)
44mΩΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter
(TA=25°C unless otherwise specified)
Symbol Min. Typ. Max.
Unit
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 1.1 - V IS=2A, VGS=0
GS(th)
- - ±100
GSS
DSS
120 - - A VDS=5V, VGS=10V
D(on)
DS(ON)
fs
1 - - V VDS=VGS, ID=250µA
nA VDS=0, VGS=20V
- - 1
- - 25 VDS=80V, VGS=0, TJ=55°C
- - 44
- - 64 VGS=4.5V, ID=2A
- 30 - S VDS=15V, ID=2A
µA
mΩ
Dynamic 2
Total Gate Charge Qg - 70 Gate-Source Charge Qgs - 10 Gate-Drain Charge Qgd - 20 Turn-on Delay Time T
Rise Time Tr - 30 Turn-off Delay Time T
Fall Time Tf - 30 -
Notes:
1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
- 10 -
d(on)
- 30 -
d(off)
nC
nS
Teat Conditions
VDS=80V, VGS=0
VGS=10V, ID=2A
VDS=15V,
VGS=4.5V,
ID=90A
VDD=25V, V
RL=25Ω, ID=34A
GEN
=10V,
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Nov-2011 Rev. A Page 2 of 2
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