Page 1
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.4 6.8 F 0.4 0.6
B 9.4 10.2 G 2.2 2.4
C 5.4 5.8 H 0.45 0.55
D 2.4 3.0 I 1.4 1.8
E 1.27 REF.
J
0.8 1.2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSDF9504 provide the designer with best combination
of fast switching, low on-resistance and cost effectiveness.
The G4J9504 meet the RoHS and Green Product requirement ,
100% EAS guaranteed with full function reliability approved.
FEATURES
Low Gate Charge
Low On-resistance
MARKING CODE
9 5 0 4
= Date Code
SSDF9504
23A, 40V, R
-20A, -40V, R
N And P-Channel Enhancement Mode Power MOSFET
26mΩ
DS(ON)
DS(ON)
ΩΩΩ
40mΩ
ΩΩΩ
TO-252-4L
PACKAGE INFORMATION
Package MPQ Leader Size
REF.
TO-252-4L 2.5K 13 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current
@ VGS=10V 1
(TA=25°C unless otherwise specified)
Ratings
N-Channel P-Channel
TA =25°C
ID
TA =100°C 18 -16
23 -20
REF.
Unit
A
Pulsed Drain Current 2 IDM 45 -44 A
Single Pulse Avalanche Energy 3 EAS 28 66 mJ
Avalanche Current IAS 17.8 -27.2 A
Power Dissipation 4 PD 25 W
Maximum Junction to Ambient 1 R
Maximum Junction to Case 1 R
Operating Junction & Storage Temperature Range TJ, T
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 1 of 7
62 °C / W
θJA
5 °C / W
θJA
-55~150 °C
STG
Page 2
Parameter
Symbol
Min.
Typ. Max.
Unit Test Conditions
SSDF9504
23A, 40V, R
Elektronische Bauelemente
N And P-Channel Enhancement Mode Power MOSFET
-20A, -40V, R
DS(ON)
DS(ON)
26mΩ
40mΩ
ΩΩΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance 2
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
(TJ = 25°C unless otherwise specified)
Static
BV
V
I
I
R
DS(ON)
Qgs
Qgd
T
T
C
C
C
DSS
GS(th)
g
fs
GSS
DSS
Qg
d(on)
Tr
d(off)
Tf
iss
oss
rss
Rg
40 - -
-40 - - VGS=0, ID= -250µA
1 - 2.5
-1 - -2.5 VDS=VGS, ID= -250µA
- 8 -
- 12.6 - VDS= -5V, ID= -8A
- - ±100
- -
- - 1
- - -1 VDS= -32V, VGS=0, TJ=25°C
- - 5 VDS=32V, VGS=0, TJ=55°C
- - -5 VDS= -32V, VGS=0 , TJ=55°C
- - 26
- - 40 VGS= -10V, ID= -6A
- - 35 VGS=4.5V, ID=4A
- - 65 VGS= -4.5V, ID= -4A
- 5.5 -
- 9 -
- 1.25 -
- 2.54 -
- 2.5 -
- 3.1 -
- 8.9 -
- 19.2 -
- 2.2 -
- 12.8 -
- 41 -
- 48.6 -
- 2.7 -
- 4.6 -
- 593 -
- 1004 -
- 76 -
- 108 -
- 56 -
- 80 -
- 2.6 5.2
- 13 16
±
100
VGS=0, ID=250µA
V
VDS=VGS, ID=250µA
V
VDS=5V, ID=12A
S
VGS= ±20V
nA
VGS= ±20V
VDS=32V, VGS=0, TJ=25°C
µA
VGS=10V, ID=6A
mΩ
N-Channel
VDS=20V, VGS=4.5V, ID=12A
nC
P-Channel
VDS= -20V, VGS= -4.5V, ID= -12A
N-Channel
VDD=20V, RG=3.3Ω,RD=20Ω
VGS=10V, ID=1A
nS
P-Channel
VDD= -15V, RG=3.3Ω, RD=20Ω
VGS= -10V, ID= -1A
N-Channel
VGS=0, VDS=15V, f=1.0MHz
pF
P-Channel
VGS=0, VDS= -15V, f=1.0MHz
Ω VDS=VGS=0, f=1.0MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 2 of 7
Page 3
SSDF9504
23A, 40V, R
Elektronische Bauelemente
N And P-Channel Enhancement Mode Power MOSFET
-20A, -40V, R
DS(ON)
DS(ON)
26mΩ
40mΩ
ΩΩΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
N-Ch
Single Pulse Avalanche Energy
Forward On Voltage2
Continuous Source Current
Pulsed Source Current
Notes:
1 Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Pulse width≦300µs, duty cycle≦2%.
3 The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A
4 .The power dissipation is limited by 150 ℃junction temperature
5 The Min. value is 100% EAS tested guarantee.
6 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2,6
5
P-Ch
N-Ch
P-Ch - - -1 IS= -1A, VGS=0, TJ=25°C
N-Ch
1,6
P-Ch - - -20
N-Ch
P-Ch - - -44
(TJ = 25°C unless otherwise specified)
Guaranteed Avalanche Chatacteristics
E
AS
9 - -
20
- -
Source-Drain Diode
V
SD
I
S
I
SM
- - 1.2
- - 23
- - 45
Test Conditions
mJ
V
A
A
VDD=25V, L=0.1mH, IAS=10A
VDD= -25V, L=0.1mH, IAS= -15A
IS=1A, VGS=0, TJ=25°C
VD=VG=0, Force Current
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 3 of 7
Page 4
Elektronische Bauelemente
CHARACTERISTICS CURVE (N-Channel)
SSDF9504
23A, 40V, R
-20A, -40V, R
N And P-Channel Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
26mΩ
40mΩ
ΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 4 of 7
Page 5
Elektronische Bauelemente
CHARACTERISTICS CURVE (N-Channel)
SSDF9504
23A, 40V, R
-20A, -40V, R
N And P-Channel Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
26mΩ
40mΩ
ΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 5 of 7
Page 6
Elektronische Bauelemente
CHARACTERISTICS CURVE (P-Channel)
SSDF9504
23A, 40V, R
-20A, -40V, R
N And P-Channel Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
26mΩ
40mΩ
ΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 6 of 7
Page 7
Elektronische Bauelemente
CHARACTERISTICS CURVE (P-Channel)
SSDF9504
23A, 40V, R
-20A, -40V, R
N And P-Channel Enhancement Mode Power MOSFET
DS(ON)
DS(ON)
26mΩ
40mΩ
ΩΩΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Sep-2012 Rev. A Page 7 of 7
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