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SSD9973
Elektronische Bauelemente
RoHS Compliant Product
Description
The SSD9973 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-252 is universally preferred for all
surface mount applications and
suited for low voltage applications
commercial-industrial
such as DC/DC converters.
Features
* Low Gate Charge
* Simple Drive Requirement
14A, 60V,RDS(ON)80m
Ω
N-Channel Enhancement Mode Power Mos.FET
TO-252
D
G
S
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
1
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Tj, Tstg
REF.
A 6.40 6.80 G 0.50 0.70
B 5.20 5.50 H 2.20 2.40
C 6.80 7.20 J 0.45 0.55
D 2.20 2.80 K 0 0.15
E 2.30 REF. L 0.90 1.50
F 0.70 0.90 M 5.40 5.80
S 0.60 0.90 R 0.80 1.20
o
C
o
C
o
C
Millimeter Millimeter
Min. Max.
60
± 20
14
9
40
27
0.22
-55~+150
REF.
Min. Max.
V
V
A
A
A
W
o
W / C
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
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01-Jun-2002 Rev. A
Max.
Max.
Symbol Ratings Unit
Rthj-c
Rthj-a
4 5.
110
o
/W C
o
/W C
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SSD9973
Elektronische Bauelemente
14A, 60V,RDS(ON)80m
N-Channel Enhancement Mode Power Mos.FET
o
C
o
C
)
o
BV
DSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RD S( ON )
Qg
Qgs
Qgd
Td
(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Min. Unit
60
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.05
_
_
_
_
_
_
8
3
4
7
15
16
3
720
77
45
_
_
3.0
±
100
25
80
100
13
_
_
_
_
_
1150
_
_
1
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Ω
Test Condition
VGS=0V, ID=250uA
Reference to 25 C , I
VDS=VGS, ID=250uA
±
VGS= 20V
VDS=60V,VGS=0
VDS=48V,VGS=0
VGS=10V, ID
VGS=4.5V, I
ID=9 A
VDS=48V
VGS= 4.5V
V
DD=30V
ID=9A
VGS=10V
R
G=3.3
RD=3.3
VGS=0V
VDS=25V
f=1.0MHz
o
=9A
D=6 A
Ω
Ω
D=1mA
Forward Transconductance
Gfs
8.6
__
S
VDS=10V, ID=9A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Change
Notes:
1.
Pulse width limited by Max. junction temperature.
Pulse width 300us, dutycycle 2%.
2.
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01-Jun-2002 Rev. A
≦
≦
V
SD
Trr
Q
rr
Min. Unit
_
_
Typ.
__
28
27
1.2
_
_
V
nS
nC
Test Condition
IS=14 A, VGS=0V.
IS=9 A, VGS=0V.
dl/dt=100A/us
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SSD9973
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
14A, 60V,RDS(ON)80m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
h
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01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SSD9973
Elektronische Bauelemente
14A, 60V,RDS(ON)80m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
h
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01-Jun-2002 Rev. A
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