Page 1
A
C
D
N
O
P
G E
FHK
J
M
B
TO-252(D-
Pack)
1
3
2
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.35
6.80 J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64
1.20
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD95N03 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R
and gate charge for most of the synchronous
DS(ON)
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
SSD95N03
96A , 30V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
4mΩ
MARKING
95N03
Date Code
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
Gate
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 192 A
VGS=10V, TC=25°C
VGS=10V,TC=100°C 88 A
(TA=25°C unless otherwise specified)
ID
96 A
REF.
Drain
Source
Total Power Dissipation 4 TC=25°C PD 62.5 W
Linear Derating Factor 0.42 W / °C
Single Pulse Avalanche Energy 3 EAS 317 mJ
Single Pulse Avalanche Current IAS 53.8 A
Operating Junction and Storage Temperature Range TJ, T
Maximum Thermal Resistance Junction-Ambient 1 R
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Case 1 R
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 1 of 4
-55~175 °C
STG
62 °C / W
θJA
2.4 °C / W
θJC
Page 2
ID=1mA
SSD95N03
96A , 30V , R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
4mΩ
ELECTRICAL CHARACTERISTICS
Parameter
(TJ=25°C unless otherwise specified)
Symbol Min. Typ. Max.
Static
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temperature Coefficient △BV
Gate-Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
TJ =25°C
Drain-Source Leakage Current
TJ =55°C - - 5 VDS=24V, VGS=0
Static Drain-Source On-Resistance 2 R
Total Gate Charge Qg - 31.6 Gate-Source Charge Q
Gate-Drain (“Miller”) Change Q
30 - - V VGS=0, ID=250µA
DSS
/△T
DSS
GS(th)
fs
- - ±100
GSS
- 0.0213
J
1.0 - 2.5 V VDS=VGS, ID=250µA
- 26.5 - S VDS=5V, ID=30A
- - 1
I
DSS
- 3.4 4
DS(ON)
- 5.2 6 VGS=4.5V, ID=15A
gs
gd
- 8.6 -
- 11.7 -
Unit
- V / °C
nA VGS= ±20V
µA
mΩ
nC
Teat Conditions
Reference to 25°C,
VDS=24V, VGS=0
VGS=10V, ID=30A
ID=15A
VDS=15V
VGS=4.5V
Turn-on Delay Time T
Rise Time Tr - 19 Turn-off Delay Time T
- 9 -
d(on)
- 58 -
d(off)
nS
VDD=15 V
ID=15A
VGS=10V
RG=3.3 Ω
Fall Time Tf - 15.2 Input Capacitance C
Output Capacitance C
- 3075 4000
iss
- 400 530
oss
pF
V
=0
GS
VDS=15 V
f =1.0MHz
Reverse Transfer Capacitance C
- 315 -
rss
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5 EAS 98 - - mJ VDD=25V,L=0.1mH , IAS=30A
Source-Drain Diode
Diode Forward Voltage 2 V
Continuous Source Current
Pulsed Source Current
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width≦300µs , duty cycle≦2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A
4. The power dissipation is limited by 175°C junct ion temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as I
1,6
IS - - 96 A
2,6
ISM - - 192 A
and IDM , in real applications , should be limited by total power dissipation.
D
SD
- - 1.2 V IS=30A, VGS=0
VD=VG=0, Force Current
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD95N03
96A , 30V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
4mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD95N03
96A , 30V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
4mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 4 of 4
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