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SSD9575
Elektronische Bauelemente
RoHS Compliant Product
Description
The SSD9575 provide the designer with the best combination of
fast switching, ruggerized device device design, low on-resistance
and cost -effectiveness.
The TO-252 is universally preferred for all
commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Features
* Low On-Resistance
* Simple Drive Requirement
* Fast Switching
-15A, -60V,RDS(ON)90m
Ω
P-Channel Enhancement Mode Power Mos.FET
TO-252
G
Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
1
D
S
VDS
VGS
ID@TC=25
ID@TC=
100
IDM
25
PD@TC=
Tj, Tstg
REF.
A 6.40 6.80 G 0.50 0.70
B 5.20 5.50 H 2.20 2.40
C 6.80 7.20 J 0.45 0.55
D 2.20 2.80 K 0 0.15
E 2.30 REF. L 0.90 1.50
F 0.70 0.90 M 5.40 5.80
S 0.60 0.90 R 0.80 1.20
o
C
o
C
o
C
Millimeter Millimeter
Min. Max.
0
-6
± 25
-15
-9.5
-45
36
0.29
-55~+150
REF.
Min. Max.
V
V
W / C
A
A
A
W
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol Ratings Unit
Max.
Max.
Any changing of specification will not be informed individual
Rthj-c
Rthj-a
3.5
110
o
o
/W C
/W C
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SSD9575
Elektronische Bauelemente
-15A, -60V,RDS(ON)90m
P-Channel Enhancement Mode Power Mos.FET
o
C
o
C
)
o
BV
DSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RD S( ON )
Qg
Qgs
Qgd
Td
(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Min. Unit
-
60
_
-
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-
0.06
_
_
_
_
_
-3.0
±
100
-25
_
_
-1
90
_
17
5
6
10
19
46
53
1660
160
100
120
27
_
_
_
_
_
_
2660
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
V
o
V/
C
V
nA
uA
uA
Ω
m
nC
nS
pF
Ω
Test Condition
VGS=0V, ID=-250uA
Ω
Ω
o
=-12A
D=-9A
Reference to 25 C , I
VDS=VGS, ID=-250uA
±
VGS= 25V
VDS=-60V,VGS=0
VDS=-48V,VGS=0
VGS=-10V, ID
VGS=-4.5V, I
ID=-9A
VDS=-48V
VGS=-4.5V
V
DD=-30V
ID=-9A
VGS=-10V
R
G=3.3
RD=3.3
VGS=0V
VDS=25V
f=1.0MHz
D=-1mA
Forward Transconductance
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Change
Notes:
1.
Pulse width limited by Max. junction temperature.
Pulse width 300us, dutycycle 2%.
2.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Gfs
Min. Unit
2
2
≦
≦
V
SD
Trr
Q
rr
_
_
_
14
Typ.
_
56
159
__
S
VDS=-10V, ID=-9A
Test Condition
-1.2
_
_
Any changing of specification will not be informed individual
V
nS
nC
-9 A, VGS=0V.
IS=
-9A, VGS=0V.
IS=
dl/dt=100A/us
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SSD9575
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-15A, -60V,RDS(ON)90m
Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
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Page 4
SSD9575
Elektronische Bauelemente
-15A, -60V,RDS(ON)90m
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Ω
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
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