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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high
cell density process. Low R
assures minimal power
DS(on)
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
FEATURES
Low R
battery life.
Miniature TO-252 surface mount package saves
board space.
High power and current handling capability.
Low side high current DC-DC converter applications.
provides higher efficiency and extends
DS(on)
PACKAGE INFORMATION
Package MPQ LeaderSize
TO-252 2.5K 13’ inch
SSD70N04-06D
75A, 40V, R
N-Ch Enhancement Mode Power MOSFET
6 mΩ
DS(ON)
TO-252(D-Pack)
A
B
G E
FHK
M
J
Millimeter
REF.
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
REF.
Millimete
Drain
Gate
C
D
N
O
P
Source
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1 P
Operating Junction and Storage Temperature Range TJ, T
Maximum Thermal Resistance Junction-Ambient 1 R
Maximum Thermal Resistance Junction-Case R
1
I
2
IDM 40 A
= 25°C unless otherwise specified)
A
@T
=25℃ 75 A
D
C
30 A
S
=25℃ 50 W
D @TC
-55 ~ 175 °C
STG
Thermal Resistance Ratings
50 °C / W
θJA
3.0 °C / W
θJC
Notes：
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jan-2011 Rev.A Page 1 of 2
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test conditions
N-Ch Enhancement Mode Power MOSFET
= 25°C unless otherwise specified)
A
Static
SSD70N04-06D
75A, 40V, R
DS(ON)
6 mΩ
Gate-Threshold Voltage V
Gate-Body Leakage I
GS(th)
GSS
1.0 - - V VDS=VGS, ID=250μA
- - ±100 nA VDS=0V, VGS=20V
- - 1
Zero Gate Voltage Drain Current I
DSS
- - 25 VDS=32V, VGS=0V, TJ=55°C
On-State Drain Current 1 I
34 - - A VDS=5V, VGS=10V
D(on)
- - 6
Drain-Source On-Resistance 1 R
DS(ON)
- - 8 VGS=4.5V, ID=65A
Forward Transconductance 1 g
Diode Forward Voltage V
fs
SD
- 22 - S VDS=15V, ID=75A
- 1.1 - V IS= 34A, VGS= 0V
Dynamic
2
Total Gate Charge Qg - 4.0 -
Gate-Source Charge Qgs - 1.1 -
Gate-Drain Charge Qgd - 1.4 -
Turn-on Delay Time T
- 16 -
d(on)
Rise Time Tr - 5 -
Turn-off Delay Time T
- 23 -
d(off)
Fall Time Tf - 3 -
Source-Ddrain Reverse
Recovery Time
Notes：
1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
2 Guaranteed by design, not subject to production testing.
- 50 - IF=34A, Di/Dt =100A/uS
T
RR
VDS=32V, VGS=0V
μA
=10V, ID=75A
V
GS
mΩ
V
= 15V
nC
DS
V
GS
= 4.5V
ID= 75A
=25V
V
DD
ID=34 A
V
nS
GEN
R
L
=25
=10V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jan-2011 Rev.A Page 2 of 2
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