Datasheet ssd45n03 Datasheet

SSD45N03

Elektronische Bauelemente

Description

The SSD45N03 provide the designer with the best combination

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The TO-252 is universally preferred for all

surface mount applications and

suited for low voltage applications

commercial-industrial

such as DC/DC converters.

Features

* RoHS Compliant

* Low Gate Charge

* Simple Drive Requirement

* Fast Switching Speed

45A, 25V,RDS(ON)9m

Ω

N-Channel Enhancement Mode Power Mos.FET

TO-252

D

G

S

Absolute Maximum Ratings

Parameter Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current,VGS@10V

Continuous Drain Current,VGS@10V

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy

Avalanche Current

Operating Junction and Storage Temperature Range

1

2

VDS

VGS

ID@TC=25

ID@TC=100

IDM

PD@TC=25

EAS

IAR

Tj, Tstg

REF.

A 6.40 6.80 G 0.50 0.70
B 5.20 5.50 H 2.20 2.40
C 6.80 7.20 J 0.45 0.55
D 2.20 2.80 K 0 0.15
E 2.30 REF. L 0.90 1.50
F 0.70 0.90 M 5.40 5.80
S 0.60 0.90 R 0.80 1.20

o

C

o

C

o

C

Millimeter Millimeter

Min. Max.

REF.

Ratings Unit

25

± 20

45

32

150

50

0.4

150

25

-55~+150

Min. Max.

V

V

A

A

A

W

o

W / C

mJ

A

o

C

Thermal Data

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Max.

Max.

Symbol

Rthj-c

Rthj-a

Ratings

2.5

110

Unit

o

/W C

o

/W C

Page 1 of 4

SSD45N03

45A, 25V,RDS(ON)9m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

o

C

o

C

)

o

BV

DSS

BVDS/ Tj

VGS(th)

IGSS

IDSS

RD S( ON )

Qg

Qgs

Qgd

Td

(ON)

Tr

(Off)

Td

T

f

Ciss

Coss

Crss

Min. Unit

25

_

1.0

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

Typ.

_

0.026

_

_

_

_

6

10

15

4

6

8.8

57.5

18.5

6.4

1135

200

135

± 

13

_

_

3.0

100

1

25

9

_

_

_

_

_

_

_

_

_

_

Electrical Characteristics( Tj=25 C Unless otherwise specified)

Parameter Symbol Max.

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate-Source Leakage Current

Drain-Source Leakage Current (Tj=25 )

Drain-Source Leakage Current(Tj=150

Static Drain-Source On-Resistance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

3

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

3

V

o

V/

C

V

nA

uA

uA

Ω

m

nC

nS

pF

Ω

Test Condition

VGS=0V, ID=250uA

Reference to 25 C , I

VDS=VGS, ID=250uA

±

VGS= 20V

VDS=25V,VGS=0

VDS=20V,VGS=0

VGS=10V, ID

VGS=4.5V, I

ID=20A

VDS=20V

VGS= 4.5V

V

DD=15V

ID=20A

VGS=10V

R

G=3.3

RD=0.75

VGS=0V

VDS=25V

f=1.0MHz

o

=30A

D=30 A

Ω

Ω

D=1mA

Forward Transconductance

Gfs

25

__

S

VDS=10V, ID=10A

Source-Drain Diode

Parameter Symbol Max.

Forward On Voltage

3

Continuous Source Current(Body Diode)

Notes:

1.

Pulse width limited by safe operating area.

2.

Staring Tj=25 C,VDD=25V,L=0.1mH,RG=25 ,IAS=10A
Pulse width 300us, dutycycle 2%.

3.

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

≦

o

≦

V

SD

IS

Ω

Min. Unit

_

Typ.

__

_

1.5

50

V

A

Test Condition

0

IS=2 A, VGS=0V

VD=VG=0V,VS=1.5 V

Page 2 of 4

SSD45N03

2

Elektronische Bauelemente

Characteristics Curve

Fig 1. Typical Output Characteristics

13

12

11

10

9

8

7

45A, 25V,RDS(ON)9m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 2. Typical Output Characteristics

6

5

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

-Jun-2002 Rev. A

01

Fig 5. Forward Characteristics of
Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

Page 3 of 4

SSD45N03

45A, 25V,RDS(ON)9m

Ω

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 11. Switching Time Waveform

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

-Jun-2002 Rev. A

01

Fig 10. Effective Transient Thermal Impedance

Fig 12. Gate Charge Waveform

Page

4 of 4