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TO-252(D
-
Pack)
A
C
D
N
O
P
G E
FHK
J
M
B
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.35
6.80 J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64
1.20
1
3
Source
2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
Low R
provides higher efficiency and
DS(on)
extends battery life.
Low thermal impedance copper leadframe
TO-252 saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
SSD40P04-20DE
-36A , -40V , R
P-Ch Enhancement Mode Power MOSFET
REF.
DS(ON)
30mΩ
REF.
Package MPQ Leader Size
TO-252 2.5K 13 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1 ID -36 A
Pulsed Drain Current @TA=25°C 2 IDM -40 A
Continuous Source Current (Diode Conduction) 1 IS -30 A
Total Power Dissipation @TA=25°C 1 PD 50 W
Operating Junction and Storage Temperature Range TJ, T
(TA=25°C unless otherwise specified)
-55 ~ 175 °C
STG
Thermal Resistance Ratings
Drain
Gate
Maximum Thermal Resistance Junction-Ambient 1 R
Maximum Thermal Resistance Junction-Case R
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
50 °C / W
θJA
3 °C / W
θJC
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A Page 1 of 4
Page 2
SSD40P04-20DE
-36A , -40V , R
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
DS(ON)
30mΩ
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage V
GS(th)
- - ±100
GSS
DSS
-41 - - A VDS = -5V, VGS= -10V
D(on)
DS(ON)
fs
SD
-1 - - V VDS= V
- - -1
- - -5 VDS= -24V, VGS=0, TJ=55°C
- - 30
- - 40 VGS= -4.5V, ID= -29A
- 31 - S VDS= -15V, ID= -36A
- -0.7 - V IS= -41A, VGS=0
Dynamic 2
Total Gate Charge Qg - 13.9 30
Gate-Source Charge Qgs - 5.2 20
Gate-Drain Charge Qgd - 5.8 20
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time T
Rise Time Tr - 12 Turn-off Delay Time T
Fall Time Tf - 46 -
Notes:
1. Pulse test：Pulse width ≦ 300 µs, duty cycle ≦ 2％.
2. Guaranteed by design, not subject to production testing.
- 1583 4000
iss
- 278 600
oss
- 183 400
rss
- 15 -
d(on)
- 62 -
d(off)
Teat Conditions
= -250µA
GS, ID
nA VDS =0, VGS= ±25V
VDS= -24V, VGS=0
µA
VGS= -10V, ID= -36A
mΩ
VDS= -15V
nC
VGS= -4.5 V
ID= -36A
VDS= -15V,
pF
VGS=0,
f=1MHz
VDD= -15V
ID= -41A
nS
V
= -10 V
GEN
RL=15Ω
RG=6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD40P04-20DE
-36A , -40V , R
P-Ch Enhancement Mode Power MOSFET
DS(ON)
30mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD40P04-20DE
-36A , -40V , R
P-Ch Enhancement Mode Power MOSFET
DS(ON)
30mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A Page 4 of 4
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