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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
P-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process.
Low R
assures minimal power loss and conserves energy, making this
DS(on)
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
Low R
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended V
provides higher efficiency and extends battery life.
DS(on)
range (±25) for battery pack applications.
GS
PRODUCT SUMMARY
PRODUCT SUMMARY
I
V
(V) R
DS
-40
(on) m(
DS
30@V
= -10V -36
GS
40@VGS= -4.5V -29
D
(A)
Drain
Gate
Source
SSD40P04-20D
-36A, -40V, R
DS(ON)
REF.
30mΩ
TO-252(D-Pack)
A
B
G E
FHK
M
J
Millimeter
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
REF.
C
D
N
O
P
Millimete
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a I
Total Power Dissipation a P
Operating Junction and Storage Temperature Range TJ, T
a
I
b
IDM ±40 A
@T
=25℃ 36 A
D
A
-30 A
S
=25℃ 50 W
D @TA
-55 ~ 175 °C
STG
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a R
Maximum Thermal Resistance Junction-Case R
50 °C / W
θJA
3.0 °C / W
θJC
Notes：
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.B Page 1 of 5
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
P-Ch Enhancement Mode Power MOSFET
SSD40P04-20D
-36A, -40V, R
DS(ON)
30mΩ
PARAMETER
SYMBO
MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current a I
Drain-Source On-Resistance a R
Forward Transconductance a g
Diode Forward Voltage V
GS(th)
- - ±100 nA VDS = 0V, VGS= ±25V
GSS
DSS
D(on)
DS(ON)
fs
SD
Total Gate Charge Qg - 13.9 -
Gate-Source Charge Qgs - 5.2 -
Gate-Drain Charge Qgd - 5.8 -
-1 - - VDS= V
- - -1
- - -5 VDS= -24V, VGS=0V, TJ=55°C
-41 - - A VDS = -5V, VGS= -10V
- - 30
mΩ
- - 40 VGS= -4.5V, ID= -29A
- 31 - S VDS= -15V, ID= -36A
- -0.7 - V IS= -41 A, VGS= 0 V
Dynamic
b
VDS= -24V, VGS= 0V
μA
= -10V, ID= -36A
V
GS
V
= -15 V
nC
DS
VGS = -4.5 V
I
= -36 A
D
GS, ID
= -250 μA
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 1583 -
iss
- 278 -
oss
- 183 -
rss
Switching
Turn-on Delay Time T
Rise Time Tr - 12 -
Turn-off Delay Time T
Fall Time Tf - 46 -
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
- 15 -
d(on)
- 62 -
d(off)
pF
nS
V
= -15 V
DS
VGS = 0 V
f = 1MHz
= -15 V
V
DD
I
= -41 A
D
V
= -10 V
GEN
RL= 15
R
= 6
G
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.B Page 2 of 5
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, R
DS(ON)
30mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.B Page 3 of 5
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, R
DS(ON)
30mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.B Page 4 of 5
Page 5
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, R
DS(ON)
30mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.B Page 5 of 5
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