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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density process.
Low R
assures minimal power loss and conserves energy, making this
DS(on)
device ideal for use in power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
Low R
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Low side high current DC-DC Converter applications.
provides higher efficiency and extends battery life.
DS(on)
SSD40N04-20D
39A, 40V, R
DS(ON)
22mΩ
TO-252(D-Pack)
A
B
G E
FHK
M
J
C
D
N
O
P
PRODUCT SUMMARY
PRODUCT SUMMARY
V
(V) R
DS
40
(on) m( I
DS
22@V
GS
27@VGS= 4.5V 36
(A)
D
= 10V 39
Millimeter
REF.
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
REF.
Drain
Gate
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
Source
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a I
Total Power Dissipation a P
Operating Junction and Storage Temperature Range TJ, T
a
I
b
IDM 40 A
@T
=25℃ 39 A
D
A
30 A
S
=25℃ 50 W
D @TA
-55 ~ 175 °C
STG
THERMAL RESISTANCE RATINGS
Millimete
Maximum Thermal Resistance Junction-Ambient a R
Maximum Thermal Resistance Junction-Case R
50 °C / W
θJA
3.0 °C / W
θJC
Notes：
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Sep-2010 Rev.C Page 1 of 4
Page 2
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Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
= 25°C unless otherwise specified)
A
N-Ch Enhancement Mode Power MOSFET
Static
SSD40N04-20D
39A, 40V, R
DS(ON)
22mΩ
Gate-Threshold Voltage V
Gate-Body Leakage I
GS(th)
- - ±100 nA VDS = 0V, VGS= 20V
GSS
1.0 - - V VDS= V
- - 1
Zero Gate Voltage Drain Current I
DSS
μA
- - 25 VDS= 24V, VGS= 0V, TJ=55°C
On-State Drain Current a I
34 - - A VDS = 5V, VGS= 10V
D(on)
- - 22
Drain-Source On-Resistance a R
DS(ON)
mΩ
- - 27 VGS= 4.5V, ID= 36 A
Forward Transconductance a g
Diode Forward Voltage V
Pulsed Source Current
Body Diode) a
fs
SD
- 5 - A
I
SM
- 22 - S VDS= 15V, ID= 39 A
- 1.1 - V IS= 34 A, VGS= 0 V
Dynamic
b
Total Gate Charge Qg - 20 -
Gate-Source Charge Qgs - 7 -
nC
Gate-Drain Charge Qgd - 7 -
Input Capacitance C
- 1317 -
iss
pF
Output Capacitance C
- 272 -
oss
= 250 μA
GS, ID
VDS= 24V, VGS= 0V
= 10V, ID= 39 A
V
GS
V
= 15 V
DS
V
= 4.5 V
GS
ID = 39 A
V
= 15 V
DS
V
= 0 V
GS
f = 1MHz
Turn-on Delay Time T
- 16 -
d(on)
Rise Time Tr - 5 -
Turn-off Delay Time T
- 23 -
d(off)
Fall Time Tf - 3 -
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
nS
= 25 V
V
DD
= 34 A
I
D
V
= 10 V
GEN
RL= 25
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Sep-2010 Rev.C Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSD40N04-20D
N-Ch Enhancement Mode Power MOSFET
39A, 40V, R
DS(ON)
22mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Sep-2010 Rev.C Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSD40N04-20D
N-Ch Enhancement Mode Power MOSFET
39A, 40V, R
DS(ON)
22mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Sep-2010 Rev.C Page 4 of 4
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