Datasheet ssd40n03 Datasheet

SSD40N03

Elektronische Bauelemente

RoHS Compliant Product

Description

The SSD40N03 provide the designer with the best combination

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The TO-252 is universally preferred for all

surface mount applications and

suited for low voltage applications

commercial-industrial

such as DC/DC converters.

Features

* Repetitive Avalanche Rated

* Dynamic dv/dt Rating

* Simple Drive Requirement

* Fast Switching

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

TO-252

D

G

S

Absolute Maximum Ratings

Parameter Symbol Ratings Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current,VGS@10V

Continuous Drain Current,VGS@10V

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

1

VDS

VGS

ID@TC=25

ID@TC=100

IDM

PD@TC=25

Tj, Tstg

REF.

A 6.40 6.80 G 0.50 0.70
B 5.20 5.50 H 2.20 2.40
C 6.80 7.20 J 0.45 0.55
D 2.20 2.80 K 0 0.15
E 2.30 REF. L 0.90 1.50
F 0.70 0.90 M 5.40 5.80
S 0.60 0.90 R 0.80 1.20

o

C

o

C

o

C

Millimeter Millimeter

Min. Max.

30

± 20

36

25

150

50

0.

4

-55~+150

REF.

Min. Max.

V

V

A

A

A

W

o

W / C

o

C

Thermal Data

Parameter

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

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01-Jun-2002 Rev. A

Max.

Max.

Symbol Ratings Unit

Rthj-c

Rthj-a

2.5

110

o

/W C

o

/W C

Page 1 of 5

SSD40N03

Elektronische Bauelemente

36A, 30V,RDS(ON)21m

N-Channel Enhancement Mode Power Mos.FET

o

C

o

C

)

o

BV

DSS

BVDS/ Tj

VGS(th)

IGSS

IDSS

RD S( ON )

Qg

Qgs

Qgd

Td

(ON)

Tr

(Off)

Td

T

f

Ciss

Coss

Crss

Min. Unit

30

_

1.0

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

_

Typ.

_

0.037

_

_

_

_

18

24

17

3

10

7.2

60

22.5

10

800

380

133

± 

100

250

21

_

_

3.0

25

30

_

_

_

_

_

_

_

_

_

_

Electrical Characteristics( Tj=25 C Unless otherwise specified)

Parameter Symbol Max.

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate-Source Leakage Current

Drain-Source Leakage Current (Tj=25 )

Drain-Source Leakage Current(Tj=150

Static Drain-Source On-Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

2

2

V

o

V/

C

V

nA

uA

uA

Ω

m

nC

nS

pF

Ω

Test Condition

VGS=0V, ID=250uA

Reference to 25 C , I

VDS=VGS, ID=250uA

±

VGS= 20V

VDS=30V,VGS=0

VDS=24V,VGS=0

VGS=10V, ID

VGS=4.5V, I

ID=18A

VDS=24V

VGS= 5V

V

DD=15V

ID=18A

VGS=10V

R

G=3.3

RD=0.83

VGS=0V

VDS=25V

f=1.0MHz

o

=18A

D=14 A

Ω

Ω

D=1mA

Forward Transconductance

Gfs

26

__

S

VDS=10V, ID=18A

Source-Drain Diode

Parameter Symbol Max.

Forward On Voltage

2

Continuous Source Current(Body Diode)

Pulsed Source Current(Body Diode)

Notes:

1.

Pulse width limited by safe operating area.
Pulse width 300us, dutycycle 2%.

2.

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

≦

1

≦

V

SD

IS

I

SM

Min. Unit

_

_

Typ.

__

_

_

1.3

36

150

V

A

A

Test Condition

36

IS= A, VGS=0V.Tj=25C

VD=VG=0V,VS=1.3 V

o

Page 2 of 5

SSD40N03

Elektronische Bauelemente

Characteristics Curve

Fig 1. Typical Output Characteristics

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

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01-Jun-2002 Rev. A

Fig 5. Maximum Drain Current

v.s. Case Temperature

Fig 6. Type Power Dissipation

Page 3 of 5

SSD40N03

Elektronische Bauelemente

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics

Fig 11. Forward Characteristics of
Reverse Diode

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Fig 10. Typical Capacitance Characteristics

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

Page 4

of 5

SSD40N03

Elektronische Bauelemente

36A, 30V,RDS(ON)21m

Ω

N-Channel Enhancement Mode Power Mos.FET

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

-Jun-2002 Rev. A

01

Page 5 of 5