Datasheet ssd30n10-70d Datasheet

r



Elektronische Bauelemente

KEY FEATURES

 Low R  Low thermal impedance  Fast switching speed

trench technology

DS(on)

T ypical Applications

 PoE Power Sourcing Equipment  PoE Powered Devices  Telecom DC/DC converters  While LED boost converters

PRODUCT SUMMARY

V

(V) R

DS

(on) m( I

DS

78 @V

100

92 @VGS= 4.5V

A suffix of “-C” specifies halogen free

= 10V 21

GS

RoHS Compliant Product

(A)

D

19



Gate

SSD30N10-70D

N-Ch Enhancement Mode Power MOSFET

21A, 100V, R



Drain



Source

M

REF.

78 mΩ

DS(ON)

TO-252(D-Pack)

A B

G E

FHK

J

Millimeter

Min. Max. Min. Max.

A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20

REF.

Millimete

C D

N O P

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise specified)

A

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage VDS 100 V

Gate-Source Voltage VGS ±20 V

Continuous Drain Current I

Pulsed Drain Current

b

IDM 100 A

@T

=25℃ 21 A

D

C

Continuous Source Current (Diode Conduction) IS 30 A

Power Dissipation PD @TC=25℃ 50 W

Operating Junction and Storage Temperature Range TJ, T

-55 ~ 175 °C

STG

THERMAL RESISTANCE RATINGS

Maximum Thermal Resistance Junction-Ambienta R

Maximum Thermal Resistance Junction-Case R

50 °C / W

θJA

3.0 °C / W

θJC

Notes

a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

11-Aug-2010 Rev. A Page 1 of 4

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

= 25°C unless otherwise specified)

A

N-Ch Enhancement Mode Power MOSFET

Static

SSD30N10-70D

21A, 100V, R

DS(ON)

78 mΩ

Gate-Source Threshold Voltage V

Gate-Body Leakage I

GS(th)

- - ±10 μA VDS= 0V, VGS= 20V

GSS

1.0 - - V V

- - 1

Zero Gate Voltage Drain Current I

DSS

- - 25

On-State Drain Current I

34 - - A VDS= 5V, VGS= 10V

D(ON)

- - 78

Drain-Source On-Resistance R

DS(ON)

- - 92 VGS= 4.5V, ID= 6.1A

Forward Transconductance g

Diode Forward Voltage V

fs

SD

- 20 - S VDS= 40V, ID= 5.5A

- 0.8 - V IS= 9A, VGS = 0V

Dynamic

Total Gate Charge Qg - 21 -

Gate-Source Charge Qgs - 3.8 -

Gate-Drain Change Q

Turn-on Delay Time2 T

- 14.2 -

gd

- 7.5 -

d(on)

Rise Time Tr - 13.6 -

Turn-off Delay Time T

- 41 -

d(off)

Fall Time Tf - 35 -

Notes a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing.

= VGS, ID = 250μA

DS

VDS= 80V, VGS= 0V

μA

V

= 80V, VGS= 0V,

DS

TJ= 55°C

= 10V, ID= 9.2A

V

GS

mΩ

I

= 9 A

D

nC

VDS= 50 V V

= 4.5 V

GS

V

= 50 V

DD

ID= 9.6 A

nS

= 5.2 

R

L

V

GEN

R

GEN

= 10 V

= 6 

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

11-Aug-2010 Rev. A Page 2 of 4

Elektronische Bauelemente

CHARACTERISTICS CURVES

SSD30N10-70D

N-Ch Enhancement Mode Power MOSFET

21A, 100V, R

DS(ON)

78 mΩ

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

11-Aug-2010 Rev. A Page 3 of 4

Elektronische Bauelemente

CHARACTERISTICS CURVES

SSD30N10-70D

N-Ch Enhancement Mode Power MOSFET

21A, 100V, R

DS(ON)

78 mΩ

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

11-Aug-2010 Rev. A Page 4 of 4