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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low R
and to ensure minimal power loss and
DS(on)
heat dissipation. Typical applications are DC-DC converters and power
management in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low R
Low thermal impedance copper leadframce DPAK saves
board space
Fast switching speed
High performance trench technology
provides higher efficiency and extends battery life
DS(on)
PRODUCT SUMMARY
PRODUCT SUMMARY
(A)
I
V
(V) R
DS
60
(on) m(
DS
38 @V
= 10V 30
GS
50 @VGS= 4.5V 26
D
Gate
SSD30N06-39D
30A, 60V, R
Drain
Source
M
REF.
38 mΩ
DS(ON)
TO-252(D-Pack)
A
B
G E
FHK
J
Millimeter
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
REF.
Millimete
C
D
N
O
P
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a I
Power Dissipation a P
Operating Junction and Storage Temperature Range TJ, T
a
I
b
IDM 40 A
@T
=25℃ 19 A
D
C
30 A
S
=25℃ 50 W
D @TC
-55 ~ 175 °C
STG
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a R
Maximum Thermal Resistance Junction-Case R
50 °C / W
θJA
3.0 °C / W
θJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A Page 1 of 4
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Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
= 25°C unless otherwise specified)
A
N-Ch Enhancement Mode Power MOSFET
Static
SSD30N06-39D
30A, 60V, R
DS(ON)
38 mΩ
Gate-Source Threshold Voltage V
Gate-Body Leakage I
GS(th)
- - ±100 nA VDS= 0V, VGS= 20V
GSS
1.0 - - V V
- - 1
Zero Gate Voltage Drain Current I
DSS
- - 25
On-State Drain Current a I
34 - - A VDS= 5V, VGS= 10V
D(ON)
- - 38
Drain-Source On-Resistance a R
DS(ON)
- - 50 VGS= 4.5V, ID= 26A
Forward Transconductance a g
Diode Forward Voltage V
fs
SD
- 22 - S VDS= 15V, ID= 30A
- 1.1 - V IS= 24A, VGS = 0V
Dynamic b
Total Gate Charge Qg - 12.5 -
Gate-Source Charge Qgs - 2.4 -
Gate-Drain Change Q
Turn-on Delay Time T
- 2.6 -
gd
- 11 -
d(on)
Rise Time Tr - 8 -
Turn-off Delay Time T
- 19 -
d(off)
Fall Time Tf - 6 -
Notes
a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
= VGS, ID = 250μA
DS
VDS= 48V, VGS= 0V
μA
V
= 48V, VGS= 0V,
DS
TJ= 55°C
= 10V, ID= 30A
V
GS
mΩ
I
= 30 A
D
nC
VDS= 15 V
V
= 4.5 V
GS
V
= 25 V
DD
I
= 30 A
D
nS
RL= 25
= 10 V
V
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTICS CURVES
SSD30N06-39D
N-Ch Enhancement Mode Power MOSFET
30A, 60V, R
DS(ON)
38 mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTICS CURVES
SSD30N06-39D
N-Ch Enhancement Mode Power MOSFET
30A, 60V, R
DS(ON)
38 mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A Page 4 of 4
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