Page 1
A
C
D
N
O
P
G E
FHK
J
M
B
TO-252(D
-
Pack)
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.4
6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8
1.20
1
3
2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
FEATURES
Low R
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, R
DS(ON)
26mΩΩΩΩ
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
Gate
Drain
REF.
Source
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1 TC=25°C
Pulsed Drain Current 2 IDM 72 A
Continuous Source Current (Diode Conduction) 1 IS 30 A
Total Power Dissipation 1 TC=25°C
Operating Junction and Storage Temperature Range TJ, T
(TA = 25°C unless otherwise specified)
ID 34 A
PD 50 W
-55 ~ 175 °C
STG
Thermal Resistance Rating
REF.
Maximum Thermal Resistance Junction-Ambient 1 R
Maximum Thermal Resistance Junction-Case R
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
50 °C / W
θJA
3 °C / W
θJC
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, R
(TA=25°C unless otherwise specified)
DS(ON)
26mΩΩΩΩ
Parameter Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage V
DS(ON)
GS(th)
- - ±100
GSS
DSS
34 - - A VDS =5V, VGS=10V
D(on)
fs
SD
1 - - V VDS=V
- - 1
- - 25 VDS=24V, VGS=0, TJ=55°C
- - 26
- - 35 VGS=4.5V, ID=11A
- 22 - S VDS=15V, ID=17A
- 1.1 - V IS=34A, VGS=0
Dynamic 2
Total Gate Charge Qg - 4 Gate-Source Charge Qgs - 1.1 Gate-Drain Charge Qgd - 1.4 Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time T
Rise Time Tr - 5 Turn-off Delay Time T
Fall Time Tf - 3 -
Notes
1. Pulse test：Pulse width ≦ 300 µs, duty cycle ≦ 2％.
2. Guaranteed by design, not subject to production testing.
- 720 -
iss
- 165 -
oss
- 60 -
rss
- 16 -
d(on)
- 23 -
d(off)
Teat Conditions
=250 µA
GS, ID
nA VDS =0, VGS=20V
VDS=24V, VGS=0
µA
VGS=10V, ID=17A
mΩ
VDS=15V
nC
VGS=4.5V
ID=11A
VDS=15V
pF
VGS=0
f=1MHz
VDD=25V
ID=34A
nS
V
=10V
GEN
RL=25Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, R
DS(ON)
26mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, R
DS(ON)
26mΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 4 of 4
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