Page 1
A
C
D
N
O
P
G E
FHK
J
M
B
TO-252(D-
Pack)
1
3
2
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.35
6.80 J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD3055 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R
and gate charge for most of the synchronous
DS(on)
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
SSD2504S
5.4A , 100V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
370Ω
MARKING
2504S
Drain
Date Code
Gate
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
Source
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current @VGS=10V 1
Pulsed Drain Current 2 IDM 11 A
(TA=25°C unless otherwise specified)
TC=25°C
5.4 A
ID
TC=100°C 3.4 A
REF.
Total Power Dissipation 3
TC=25°C
PD
20.8
W
TA=25°C 1.13
Operating Junction and Storage Temperature Range TJ, T
-55~150 °C
STG
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1 R
Maximum Thermal Resistance Junction-Case 1 R
110 °C / W
θJA
6 °C / W
θJC
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Sep-2012 Rev. A Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS
5.4A , 100V , R
N-Ch Enhancement Mode Power MOSFET
(TJ=25°C unless otherwise specified)
SSD2504S
DS(ON)
370Ω
Parameter
Symbol Min. Typ. Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Forward Transconductance g
Gate Resistance RG - 2 - Ω VDS=VGS=0, f =1.0MHz
Gate-Source Leakage Current I
TJ=25°C
Drain-Source Leakage Current
TJ=55°C - - 5 VDS=80V, VGS=0
Static Drain-Source On-Resistance 2 R
Total Gate Charge Qg - 9.6 Gate-Source Charge Q
Gate-Drain (“Miller”) Change Q
Turn-on Delay Time 2 T
Rise Time Tr - 30.6 Turn-off Delay Time T
Fall Time Tf - 6 -
100 - - V VGS=0, ID= 250µA
DSS
GS(th)
fs
- - ±100
GSS
I
DSS
DS(ON)
1 - 2.5 V VDS=VGS, ID=250µA
- 12 - S VDS=5V, ID=3A
nA VGS= ±20V
- - 1
VDS=80V, VGS=0
µA
- - 370
VGS=10V, ID=5A
mΩ
- - 380 VGS=4.5V, ID=3A
ID=5A
nC
gs
- 1.83 -
VDS=80V
VGS=10V
gd
- 1.4 -
d(on)
- 1.85 -
VDD=50V
ID=5A
nS
- 11.2 -
d(off)
VGS=10V
RG=3.3 Ω
RL=30 Ω
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 508 -
iss
- 29 -
oss
- 16.4 -
rss
Source-Drain Diode
Diode Forward Voltage 2 V
SD
Reverse Recovery Time Trr - 20 - nS
Reverse Recovery Charge Qrr - 19 - nC
Continuous Source Current
Pulsed Source Current
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%
3. The power dissipation is limited by 150°C, junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
1,4
IS - - 5.4 A
2,4
ISM - - 11 A
- - 1.2 V IS=1A, VGS=0, TJ=25°C,
V
=0
pF
GS
VDS=15V
f =1.0MHz
IF=5A, dl/dt=100A/µS,
TJ=25°C,
VD=VG=0, Force Current
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Sep-2012 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD2504S
5.4A , 100V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
370Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Sep-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD2504S
5.4A , 100V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
370Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Sep-2012 Rev. A Page 4 of 4
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