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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
The SSD2504 provide the designer with the best combination of fast switching.
The TO-252 package is universally preferred for all commercial-industrial
surface mount applications. The device is suited for charger, industrial and
consumer environment.
FEATURES
Low On-resistance
Fast Switching Speed
Low-voltage drive (4V)
Wide SOA (safe operating area)
Easily designed drive circuits
Easy to parallel
MARKING
5.0A, 100V, R
SSD2504
DS(ON)
TO-252(D-Pack)
M
0.22Ω
A
B
J
C
D
G E
FHK
N
O
P
Gate
Drain
Source
Millimeter
REF.
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
REF.
Millimete
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation PD @TC=25℃ 20 W
Linear Derating Factor 0.16 W / °C
1
IDM 20 A
= 25°C unless otherwise specified)
A
I
@T
=25℃ 5.0 A
D
C
ID @TC=100℃ 3.75 A
Operating Junction and Storage Temperature Range TJ, T
-55 ~ 150 °C
STG
THERMAL DATA
Maximum Thermal Resistance Junction-Ambienta R
Maximum Thermal Resistance Junction-Case R
110 °C / W
θJA
6.25 °C / W
θJC
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
= 25°C unless otherwise specified)
J
N-Ch Enhancement Mode Power MOSFET
5.0A, 100V, R
SSD2504
DS(ON)
0.22Ω
Dran-Source Breakdown Voltage BV
Gate-Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
Drain-Source Leakage Current I
100 - - V VGS= 0, ID= 1mA
DSS
GS(th)
fs
- - ±100 nA VGS= ±20V
GSS
DSS
1.0 - 2.5 V VDS= 10V, ID = 1mA
- 4 - S VDS= 10V, ID= 2.5A
- - 10 μA VDS= 100V, VGS= 0V
- - 0.22
Static Drain-Source On-Resistance 2 R
DS(ON)
Ω
- - 0.28 VGS= 4.0V, ID= 2.5A
Turn-on Delay Time 2 T
- 9.0 -
d(on)
Rise Time Tr - 9.4 -
nS
Turn-off Delay Time T
- 26.8 -
d(off)
Fall Time Tf - 2.6 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 975 -
ISS
- 38 -
OSS
- 27 -
RSS
pF
SOURCE-DRAIN DIODE
= 10V, ID= 2.5A
V
GS
= 30 V
V
DD
I
= 1 A
D
VGS = 10 V
RL= 30
R
= 6
G
V
= 0 V
GS
VDS = 25 V
f = 1MHz
Diode Forward Voltage 2 V
SD
Notes：
1. Pulse width limited by maximum junction temperature.
2. Pulse width ≦ 300 μs, duty cycle ≦ 2％.
- - 1.5 V IS= 5 A, VGS= 0 V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD2504
N-Ch Enhancement Mode Power MOSFET
5.0A, 100V, R
DS(ON)
0.22Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD2504
N-Ch Enhancement Mode Power MOSFET
5.0A, 100V, R
DS(ON)
0.22Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-May-2010 Rev. A Page 4 of 4
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