Datasheet SSD2011A Datasheet (Fairchild Semiconductor)

Dual P-CHANNEL POWER MOSFET

SSD2011A

FEATURES

! Lower R ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability

DS(ON)

Product Summary

Part Number BV

DSS

SSD2011A - 60V 0.280

RDS(on) I

Ω

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

V

DSS

I

D

I

DM

V

GS

P

D

T

, T

J

STG

Drain-to-Source Voltage Continuous Drain Current T Continuous Drain Current T Drain Current-Pulsed (2) Gate-to-Source Voltage Total Power Dissipation ( T

Operating and Junction Storage Temperature Range

D

-2.0A

=25℃

A

=70℃

A

=25℃ )

A

( T

=70℃ )

A

8 SOIC

- 55 to +150

1

S

1

2

G

1

3

S

2

4

G

2

Top View

G1, G

2

S1, S

P-Channel MOSFET

-60

-2.0

-1.6

- 10.0 ±20

2.0

1.3

8

D

1

7

D

1

6

D

2

5

D

2

D2D

1

▲

◀

2

V A

A V

W

℃

Thermal Resistance

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Ambient

-- 62.5

℃/W

Rev. A

SSD2011A

Dual P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV V

I

R

t

GS(th)

GSS

DSS

DON

DS(on)

g

d(on)

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

On-State Drain-Source Current Static Drain-Source On-State Resistance ② Forward Transconductance ②

fs

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain (“Miller”) Charge

gd

(TC=25℃ unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-60

-1.0

--

-10

--

5.0

7.0 16 37 17 16

2.2

4.0

--

-100 100

-2.0

-25

--

0.28

0.5

-25 30 60 40 30

--

V

V nA nA

μA

AV

Ω

S

ns

nC

=0V,ID=-250μA

GS

V

= -5V ,ID=-250μA

DS

V

=-20V

GS

V

=20V

GS

V

=-40V

DS

VDS=-40V,TJ=55℃

=-5V, VGS=-10V

DS

V

=-10V,ID=-2.0A

GS

V

=-4.5V,ID=-1.6A

GS

VDS=-15V,ID=-2.0A

VDD=-30V,ID=-1.0A, R

=6.0Ω,

0

V

=-30V,VGS=-10V,

DS

ID=-2.0A ②③

②③

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

Continuous Source Current

I

S

(Body Diode)

V

Diode Forward Voltage ②

SD

Reverse Recovery Time ②

t

rr

Notes ;

① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycl e ≤ 2% ③ Essentially Independent of Operating Temperature

--

-2.0

--

100

-1.2

--

Modified MOSFET Symbol Showing the Integral Reverse

A

P-N Junction Rectifier

V

TA=25℃,IS=-2.0A,VGS=0V

ns

T

=25℃,IF=-2.0A,diF/dt=100A/μs

A

D

○

││││

────

││││

▶

▼

││││

────

││││

○

────

┘┘┘┘

────

G

││││

S

○

Dual P-CHANNEL POWER MOSFET

SSD2011A

10

8

6

4

, Drain Current [A ]

D

2

-I

0

012345

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Vgs=-10,-9,-8,- 7,-6,-5V

Vgs=-4V

Vgs=-3V

-VDS , Drain-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

0.5

0.4

]

Ω

0.3

, [

DS(on)

0.2

R

0.1

Drain-Source On-Resistance

0.0 0246810

VGS = -4.5 V

VGS = -10 V

-ID , Drain Current [A]

10

9

8

7

6

5

4

, Drain Current [A ]

3

D

-I

2

1

0123456

150 oC

25 oC

- 55 oC

-VGS , Gate-Source Vo ltage [V]

Fig 4. Source-Drain Forward Voltage

1

10

TJ=150 oC

TJ=25 oC

, Reverse Drain C urrent [A]

DR

-I

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

-VSD , Source-Drain Voltage [V]

1000

750

C

500

iss

@ Notes :

= 0 V

1. V

GS

2. f = 1 MHz

Capacitance [pF]

250

0

C

oss

C

rss

5 1015202530

-VDS , Drain-Source Voltage [V]

10

8

6

4

2

, Gate-Source Vo ltage [V]

GS

-V

0

0 2 4 6 8 10 12 14 16

VDD = -30 V ID = -2.0A

QG , Total Gate Char ge [nC]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

SSD2011A

Dual P-CHANNEL

POWER MOSFET

, (Normalized)

-BV

1.4

1.2

1.0

DSS

0.8

ID = -250 µA

Drain-Source Breakdown Voltage

0.6

-50 0 50 100 150

TJ , Junction Temperature [oC]

2.0

1.6

1.2

, (Normalized)

DS(on)

R

0.8

Drain-Source On-Resistance

-75 -50 -25 0 25 50 75 100 125 150 175

VGS = -10 V

= -2 A

I

D

TJ , Junction Temperature [oC]

Fig 9. Nomalized Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 8. On-Resistance vs. TemperatureFig 7. Breakdown Vltage vs. Temperature

1

Duty Cycle=0.5

Thermal Impedance

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

-5

10

-4

10

-3

10

-2

10

P

DM

t

1

t

@ Notes :

1. R

(t)=62.5 oC/W Max.

JA

θ

2. Duty Fact or, D=t1/t

3. TJM-TA=PDM*Z

4. Surface M ounted

-1

10

2

(t)

JA

θ

10

2

0

t1 , Square Wave Pulse Duration [sec]

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2

I

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H5