Datasheet SSD2007A Datasheet (Fairchild Semiconductor)

Dual N-CHANNEL POWER MOSFET

SSD2007A

FEATURES

! Extremely Lower R ! Improved Inductive Ruggedness ! Fast Switching Times ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability ! Surface Mounding Package : 8SOP

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

V

DSS

V

DGR

V

GS

I

D

I

D

I

DM

P

D

T

, T

J

STG

T

L

Drain-to-Source Voltage(1) Drain-Gate Voltage(R

=1.0MΩ)(1)

GS

Gate-to-Source Voltage Continuous Drain Current T Continuous Drain Current TA=100℃ Drain Current-Pulsed (2) Total Power Dissipation T

Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds

A

T

A

=25℃

A

=25℃ =70℃

8 SOP

G1 ,G

- 55 to +150

1

S

1

2

G

1

3

S

2

4

G

2

Top View

D1,D

2

N-Channel MOSFET

▼

50 50

±20

2.0

1.6

8.0

2.0

1.3

300

8

D

1

7

D

1

6

D

2

5

D

2

D1,D

S1 ,S

2

▼

2

V V V A A V

W

℃

Notes ;

(1) T

℃ to 150℃

= 25

J

(2) Repetitive Rating : Pulse Wi dth Lim i ted by Max. Junction Temperature

Rev. A

SSD2007A

Dual N-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV V

I

R

t

GS(th)

GSS

DSS

DON

DS(on)

g

d(on)

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

On-State Drain-Source Current(2) Static Drain-Source On-State Resistance(2) Forward Transconductance

fs

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain (“Miller”) Charge

gd

(TA=25℃ unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

600

2.0

--

8.0

--

2.5

--

1.0

2.0

--

4.0

1.0

-1.0 2

25

--

0.3

0.5

--

40 70

100

70 15

--

V V

μA

AV

Ω

S

ns

nC

=0V,ID=250μA

GS

V

= VGS,ID=250μA

DS

V

=20V

GS

V

=-20V

GS

V

=50V

DS

VDS=40V,TJ=55℃

=10V,VDS=5V

GS

V

=10V,ID=1.5A

GS

V

=5.0V,ID=0.6A

GS

VDS≥15V,ID=2.0A

VDD=30V,ID=0.6A, Z

=6.0Ω,

0

V

=25V,VGS=10V,

DS

ID=1.3A

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJA

Notes ;

(1) T (2) Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

℃ to 150℃

= 25

J

Junction-to-Ambient

-- 62.5

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

Continuous Source Current

I

S

(Body Diode)

V

Diode Forward Voltage(2)

SD

Reverse Recovery Time

t

rr

--

1.8

--

1.2

--

100

Modified MOSFET Symbol Showing the Integral Reverse

A

P-N Junction Rectifier

V

TJ=25℃,IS=1.25A,VGS=0V

ns

T

=25℃,IF=2.5A,diF/dt=100A/μs

J

○

────

G

℃/W

○

││││

────

▲

││││

◀

││││

────

││││

────

┘┘┘┘

││││

○

D

S

Dual N-CHANNEL

POWER MOSFET

SSD2007A

10

8

6

4

, Drain Current [A ]

D

2

I

0

0246810

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Vgs=10V

Vgs=5V

Vgs=4V

Vgs=3V

VDS , Drain-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

1.0

0.8

]

Ω

0.6

, [

DS(on)

R

0.4

0.2

Drain-Source On-Resistance

VGS = 5 V

VGS = 10 V

10

8

6

150 oC

4

, Drain Current [A]

D

2

I

0

01234567

25 oC

- 55 oC

VGS , Gate-Source Voltage [V]

Fig 4. Capacitance vs. Drain-Source Voltage

320

240

C

iss

160

Capacitance [pF]

80

C

oss

C

rss

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

0.0 012345

1.2

1.1

1.0

ID , Drain Current [A]

ID = 250 µA

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-50 0 50 100 150

TJ , Junction Temperature [oC]

, (Normalized)

R

0

5 10152025

VDS , Drain-Source Voltage [V]

Fig 6. Nomalized On-Resistance vs. TemperatureFig 5. Breakdown Voltage vs. Temperature

1.4

1.2

1.0

0.8

DS(on)

VGS = 10 V I

= 1.5 A

D

Drain-Source On-Resistance

0.6

-50 0 50 100 150

TJ , Junction Temperature [oC]

SSD2007A

Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient

1

Dual N-CHANNEL

POWER MOSFET

Duty Cycle=0. 5

0.2

0.1

0.05

0.02

Thermal Impedance

0.01

-5

10

Single Pulse

-4

10

Square Wave Pulse Duration [sec]

2

10

1

10

0

10

, Reverse Drain Current [A]

DR

I

TJ=150 oC

0.0 0.4 0.8 1.2 1.6 2.0 2.4

TJ=25 oC

VSD , Source-Drain Voltage [V]

P

DM

t

1

t

@ Notes :

1. R

2. Duty Fac tor, D=t1/t

3. TJM-TA=PDM*Z

4. Surface Mounted

-3

10

(t)=62.5 oC/W Max.

JA

θ

-2

10

θ

-1

10

2

(t)

JA

0

10

Fig 9. Gate Charge vs. Gate-Source VoltageFig 8. Source-Drain Diode Forward Voltage

10

VDD = 25 V

5

, Gate-Source Voltage [V]

GS

V

0

0246810

ID = 1.3A

QG , Total Gate Charge [nC]

2.0

1.5

1.0

ID = 250 µA

, (Normalized)

Fig 10. Threshold Voltage

GS(th)

0.5

V

0.0

-50 0 50 100 150

TJ , Junction Temperature [oC]

TRADEMARKS

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TM

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STAR*POWER is used under license

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2

I

C ISOPLANAR LittleFET MicroFET MicroPak

MICROWIRE OPTOLOGIC

â

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

â

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H5