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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD15N10 provide the designer with the best
combination of fast switching. The TO-252 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
FEATURES
R
Super high density cell design for extremely low R
Exceptional on-resistance and maximum DC current
≦ 100mΩ @ VGS = 10V
DS(on)
capability
MARKING
15N10
Date Code
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13’ inch
DS(on)
SSD15N10
15A, 100V, R
N-Ch Enhancement Mode Power MOSFET
M
REF.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
110mΩ
DS(ON)
TO-252(D-Pack)
A
B
G E
J
Millimeter Millimete
Min. Max.
Gate
FHK
REF.
Drain
Min. Max.
C
D
N
O
P
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise specified)
A
Source
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
T
=25°C 15 A
Continuous Drain Current
Pulsed Drain Current
1
IDM 60 A
Power Dissipation
Operating Junction and Storage Temperature Range T
Maximum Thermal Resistance Junction-Ambient (PCB
mount)
3
Maximum Thermal Resistance Junction-Case R
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Aug-2012 Rev. D Page 1 of 4
C
TC=70°C
I
D
13.8 A
TC=25°C 44.6 W
P
TA=25°C
D
, T
-55 ~ 150 °C
J
STG
2 W
Thermal Resistance Ratings
62.5 °C / W
R
θJA
2.8 °C / W
θJC
Page 2
SSD15N10
15A, 100V, R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
110mΩ
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Test conditions
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate-Source Leakage Current I
Drain-Source Leakage Current I
Static Drain-Source On-Resistance 2 R
Total Gate Charge 2 Q
DSS
GS(th)
- - ±100 nA VGS= ±20V
GSS
DSS
DS(ON)
- 26.2 -
g
Gate-Source Charge Qgs - 4.6 -
Gate-Drain (“Miller”) Change Q
Turn-on Delay Time 2 T
- 5.1 -
gd
- 4.2 -
d(on)
Rise Time Tr - 8.2 -
Turn-off Delay Time T
- 35.6 -
d(off)
Fall Time Tf - 9.6 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 1535 -
iss
- 60 -
oss
- 37 -
rss
100 - - V VGS=0, ID=250μA
1.0 - 2.5 V VDS=VGS, ID=250μA
- - 1 μA VDS=80V, VGS=0
- 100 110 mΩ VGS=10V, ID=8A
nC
nS
pF
=10A
I
D
=80V
V
DS
V
=10V
GS
=50V
V
DS
= 10A
I
D
V
=10V
GS
R
=5Ω
L
=3.3Ω
R
G
V
=0
GS
V
=15V
DS
f=1.0MHz
Gate Resistance Rg - 2 - Ω f=1.0MHz
Source-Drain Diode
Forward On Voltage 2 V
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test.
3. Surface Mounted on 1 in
copper pad of FR4 Board.
2
- - 1.2 V IS=8.0A, VGS=0V
SD
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Aug-2012 Rev. D Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSD15N10
N-Ch Enhancement Mode Power MOSFET
15A, 100V, R
DS(ON)
110mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Aug-2012 Rev. D Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTICS CURVE
SSD15N10
N-Ch Enhancement Mode Power MOSFET
15A, 100V, R
DS(ON)
110mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Aug-2012 Rev. D Page 4 of 4
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