Page 1
A
C
D
N
O
P
G E
FHK
J
M
B
TO-252(D-
Pack)
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.35
6.80 J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64
1.20
1
3
2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD12P10 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications.
FEATURES
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant
SSD12P10
2A , 650V , R
P-Channel Enhancement MOSFET
DS(ON)
8Ω
MARKING
12P10
Date Code
Drain
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
Gate
Source
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current @VGS=10V
Pulsed Drain Current 1 IDM -48 A
(TA=25°C unless otherwise specified)
TC=25°C
ID
-12 A
TC=100°C -10 A
REF.
Total Power Dissipation TC=25°C PD 35.7 W
Operating Junction and Storage Temperature Range TJ, T
Thermal Resistance Rating
Maximum Thermal Resistance Junction- case
Maximum Thermal Resistance Junction-ambient
-55~150 °C
STG
R
θJC
R
θJA
3.5 °C / W
110 °C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jun-2012 Rev. A Page 1 of 4
Page 2
ID= -
1mA
SSD12P10
2A , 650V , R
Elektronische Bauelemente
P-Channel Enhancement MOSFET
DS(ON)
8Ω
ELECTRICAL CHARACTERISTICS
Parameter
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temperature Coefficient △BV
Gate-Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
Drain-Source Leakage Current (TJ =25°C)
(TJ=25°C unless otherwise specified)
Symbol Min. Typ. Max.
-100
DSS
/△T
DSS
GS(th)
fs
- - ±100
GSS
- -0.096
J
-1.0 - -2.5 V VDS=VGS, ID= -250µA
- 8 - S VDS= -10V, ID= -8A
- - -1
I
DSS
- - V VGS=0, ID= -250µA
- V/°C
Unit
Teat Conditions
Reference to 25°C,
nA VGS= ±32V
VDS= -100V, VGS =0
µA
Drain-Source Leakage Current(TJ=150°C) - - -25 VDS= -80V, VGS =0
Static Drain-Source On-Resistance3 R
DS(ON)
- - 180
VGS= -10V, ID= -8A
mΩ
- - 210 VGS= -4.5V, ID= -6A
Total Gate Charge 2 Qg - 16 -
ID= -8A
nC
Gate-Source Charge Q
gs
- 4.4 -
VDS= -80V
VGS= -4.5V
Gate-Drain (“Miller”) Change Q
Turn-on Delay Time2 T
gd
- 9 -
d(on)
- 8.7 -
VDD= -50V
Rise Time Tr - 14 Turn-off Delay Time T
- 45 -
d(off)
nS
ID= -8A
VGS= -10V
RG= 3.3Ω
RD= 6.25Ω
Fall Time Tf - 40 Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
- 1590
iss
- 110 -
oss
- 70 -
rss
pF
Gate Resistance Rg - 8 12 Ω f=1.0MHz
Source-Drain Diode
Forward On Voltage2 V
SD
Continuous Source Current(Body Diode) IS - - -12 A
Pulsed Source Current(Body Diode) 1 ISM - - -48 A
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width ≦300us, duty cycle≦2%.
- - -1.3 V IS=-12A, VGS=0
V
=0
GS
VDS= -25V
f =1.0MHz
VD=VG=0V, VS =1.3V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jun-2012 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD12P10
2A , 650V , R
P-Channel Enhancement MOSFET
DS(ON)
8Ω
.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jun-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD12P10
2A , 650V , R
P-Channel Enhancement MOSFET
DS(ON)
8Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
06-Jun-2012 Rev. A Page 4 of 4
Loading...