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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD04N65 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R
and gate charge for most of the synchronous
DS(on)
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
MARKING
4N65
Date Code
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
SSD04N65
4A , 650V , R
N-Ch Enhancement Mode Power MOSFET
Drain
Gate
Source
M
REF.
A 6.35 6.80 J 2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
2.6Ω
DS(ON)
TO-252(D-Pack)
A
B
G E
FHK
J
Millimeter Millimete
Min. Max.
REF.
Min. Max.
C
D
N
O
P
(T
ABSOLUTE MAXIMUM RATINGS
=25°C unless otherwise specified)
A
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
T
=25°C
C
Continuous Drain Current @VGS=10V
Pulsed Drain Current
2
IDM 16 A
1
T
=100°C
C
Total Power Dissipation 4 TC=25°C P
I
D
56 W
D
4 A
2.6 A
Linear Derating Factor 0.45 W / °C
Single Pulse Avalanche Energy 3 E
2.36 mJ
AS
Single Pulse Avalanche Current IAS 7 A
Operating Junction and Storage Temperature Range T
, T
-55~150 °C
J
STG
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1 R
Maximum Thermal Resistance Junction-Case 1 R
62.5 °C / W
θJA
2.2 °C / W
θJC
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-Jul-2012 Rev. B Page 1 of 4
Page 2
SSD04N65
4A , 650V , R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
2.6Ω
ELECTRICAL CHARACTERISTICS (T
Parameter
= 25°C unless otherwise specified)
J
Symbol Min. Typ. Max.
Static
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temperature Coefficient △BV
Gate-Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
Drain-Source Leakage Current I
Static Drain-Source On-Resistance 2 R
Total Gate Charge(10V) Q
Gate-Source Charge Q
Gate-Drain (“Miller”) Change Q
Turn-on Delay Time3 T
Rise Time Tr - 18.8 -
Turn-off Delay Time T
Fall Time Tf - 29.2 -
650 - - V VGS=0, ID= 250μA
DSS
/△T
DSS
GS(th)
fs
- - ±100 nA VGS= ±30V
GSS
DSS
- 2.1 2.6 Ω VGS=10V, ID=2A
DS(ON)
- 18 -
g
gs
gd
- 11.2 -
d(on)
- 29.2 -
d(off)
- 0.69 - V/°C
J
2 - 5 V VDS=VGS, ID=250μA
- 3 - S VDS=10V, ID=2A
- - 2 μA VDS=520V, VGS=0
- 4.9 -
- 6.1 -
Unit Teat Conditions
Reference to 25°C,
ID=1mA
I
=1A
D
nC
V
=520V
DS
V
=10V
GS
VDD=300V
I
=1A
D
nS
V
GS
R
G
=10V
=10 Ω
Input Capacitance C
Output Capacitance C
- 775 -
iss
- 56 -
oss
pF
V
V
GS
DS
=0
=25V
f =1.0MHz
Reverse Transfer Capacitance C
- 3.8 -
rss
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5 EAS 0.6 - - mJ VDD=100V,L=1mH , IAS=1A
Source-Drain Diode
Diode Forward Voltage 2 V
Continuous Source Current
Pulsed Source Current
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2
2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is V
4. The power dissipation is limited by 150°C, junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as I
1,6
I
2,6
I
and IDM , in real applications , should be limited by total power dissipation.
D
SD
- - 4 A
S
- - 16 A
SM
DD
- - 1 V IS=1A, VGS=0, TJ=25°C,
=0, VS =1V
V
D=VG
copper.
OZ
=100V,VGS=10V,L=1mH,IAS=2A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-Jul-2012 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD04N65
N-Ch Enhancement Mode Power MOSFET
4A , 650V , R
DS(ON)
2.6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-Jul-2012 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD04N65
N-Ch Enhancement Mode Power MOSFET
4A , 650V , R
DS(ON)
2.6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
11-Jul-2012 Rev. B Page 4 of 4
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