Page 1
A
C
D
N
O
P
G E
FHK
J
M
B
TO-252(D-
Pack)
1
3
2
Millimeter
Millimeter
Min. Max. Min. Max.
A 6.35
6.80 J
2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2
.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64
1.20
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD02N65 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R
and gate charge for most of the synchronous
DS(on)
buck converter applications .
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
SSD02N65
2A , 650V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
8Ω
MARKING
2N65
Drain
Date Code
Gate
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
Source
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current @VGS=10V 1
Pulsed Drain Current 2 IDM 4 A
(TA=25°C unless otherwise specified)
TC=25°C
ID
2 A
TC=100°C 1.3 A
REF.
Total Power Dissipation 4 TC=25°C PD 40 W
Linear Derating Factor 0.33 W / °C
Single Pulse Avalanche Energy 3 EAS 16 mJ
Single Pulse Avalanche Current IAS 3.4 A
Operating Junction and Storage Temperature Range TJ, T
-55~150 °C
STG
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1 R
Maximum Thermal Resistance Junction-Case 1 R
62 °C / W
θJA
3 °C / W
θJC
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 1 of 4
Page 2
ID=1mA
SSD02N65
2A , 650V , R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
8Ω
ELECTRICAL CHARACTERISTICS
Parameter
(TJ = 25°C unless otherwise specified)
Symbol Min. Typ. Max.
Static
Drain-Source Breakdown Voltage BV
Breakdown Voltage Temperature Coefficient △BV
Gate-Threshold Voltage V
Forward Transconductance g
Gate-Source Leakage Current I
Drain-Source Leakage Current I
Static Drain-Source On-Resistance 2 R
Total Gate Charge Qg - 8 Gate-Source Charge Q
Gate-Drain (“Miller”) Change Q
Turn-on Delay Time3 T
Rise Time Tr - 18.4 Turn-off Delay Time T
Fall Time Tf - 23.2 -
650 - - V VGS=0, ID= 250µA
DSS
/△T
DSS
GS(th)
fs
- - ±100
GSS
DSS
- 6.3 8 Ω VGS=10V, ID=1A
DS(ON)
gs
gd
- 4.8 -
d(on)
- 10.8 -
d(off)
- 0.37 - V/°C
J
2 - 5 V VDS=VGS, ID=250µA
- 1.7 - S VDS=10V, ID=1.0A
- - 2 µA VDS=520V, VGS=0
- 2.56 -
- 2.67 -
Unit
Teat Conditions
Reference to 25°C,
nA VGS= ±30V
ID=1A
nC
VDS=520V
VGS=10V
VDD=300V
ID=1A
nS
VGS=10V
RG=10 Ω
Input Capacitance C
Output Capacitance C
- 290 -
iss
- 25 -
oss
pF
V
=0
GS
VDS=25 V
f =1.0MHz
Reverse Transfer Capacitance C
- 4 -
rss
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5 EAS 3.2 - - mJ VDD=50V,L=1mH , IAS=1.5A
Source-Drain Diode
Diode Forward Voltage 2 V
Continuous Source Current
Pulsed Source Current
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=1.5A
4. The power dissipation is limited by 150°C, junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
1,6
IS - - 2 A
2,6
ISM - - 4 A
SD
- - 1 V IS=1A, VGS=0, Tj=25°C,
VD=VG=0, VS =1V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD02N65
2A , 650V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
8Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD02N65
2A , 650V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
8Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
24-Nov-2011 Rev. A Page 4 of 4
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