Page 1
Elektronische Bauelemente
FEATURES
Power dissipation
Collector Current
Collector-base voltage
Operating & storage junction temperature
P
CM : 1 W
CM : -1.5 A
I
V(BR)CBO : - 40 V
T
j, Tstg : - 55
O
C ~ + 150O C
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
1
2
2
SS8550T
PNP Silicon
TO-92
3
1
3
1
3
2
1. EMITTER
2. BASS
.
COLLECTOR
3
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
(BR)CBO Ic= -100
(BR)CEO
(BR)EBO I
CBO
CEO
EBO
H
FE(1)
Ic=-0.1mA，IB=0 -25 V
=-100μA，IC=0
E
VCB=-40 V, IE=0 -0.1
VCE=-20V , IB=0 -0.1
VEB=-5V, IC=0 -0.1
VCE=-1V, IC= -100mA 85 400
A，IE=0
μ
DC current gain
H
FE(2)
VCE=-1V, IC= -800mA 40
Collector-emitter saturation voltage VCE(sat) IC=- 800 mA,IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800 mA,IB=-80mA -1.2 V
-40 V
-5 V
μ
μ
μ
A
A
A
VCE=-10V, IC= -50mA
Transition frequency
f
T
100 MHz
f=30MHz
CLASSIFICATION OF h
Rank B C D E
Range 85-160 120-200 160-300 300-400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
FE(1)
Any changing of specification will not be informed individual
Page 1 of 2
Page 2
Elektronische Bauelemente
Typical Characteristics
SS8550T
PNP Silicon
General Purpose Transistor
-0.5
IB=-4.0mA
-0.4
-0.3
-0.2
-0.1
[mA], COLLECTOR CURRENT
C
I
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VCE = -1V
Figure 1. Static Characteristic Figure 2. DC current Gain
-10000
-1000
V
BE(sat)
-100
V
(sat)[V], SATURATION VO LTAGE
CE
(sat), V
BE
-10
V
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
CE(sat)
IC=10I
B
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
VCE = -1V
[pF], CAPACITANCE
ob
C
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
100
10
1
-1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
f=1MHz
=0
I
E
1000
100
10
-1 -10 -100 -1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE=-10V
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
Any changing of specification will not be informed individual
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