Page 1
TRANSISTOR(PNP)
FEATURES
Complimentary to SS8050
MARKING: Y2
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
Tj
T
stg
=25℃ unless otherwise noted)
A
Collector-Base Voltage -40 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -1.5 A
Collector Power Dissipation 0.2 W
Junction Temperature 150
Storage Temperature -55-150
℃
℃
SOT-323
1. Base
2. Emitter
3. Collector
SS8 550
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
V
V
V
I
I
I
IC=-100μA, IE=0 -40 V
(BR)CBO
IC=-0.1mA, IB=0 -25 V
(BR)CEO
IE=-100μA, IC=0 -5 V
(BR)EBO
VCB=-40V, IE=0 -0.1 μA
CBO
VCE=-20V, IB=0 -0.1 μA
CEO
VEB=-5V, IC=0 -0.1 μA
EBO
h
VCE=-1V, IC=-100mA 120 400
FE(1)
h
VCE=-1V, IC=-800mA 40
FE(2)
IC=-800mA, IB=-80mA -0.5 V
V
CE(sat)
IC=-800mA, IB=-80mA -1.2 V
V
BE(sat)
IC=-1V,VCE=-10mA -1 V
V
BE(on)
IB=-1A -1.55 V
V
BEF
V
=-10V,IC=-50mA,
f
T
VCB=-10V,IE=0,f=1MHz 20 pF
C
ob
CE
f=30MHz
100 MHz
CLASSIFICATION OF h
Rank
Range
１
JinYu
semiconductor
FE
(1)
L H J
120-200 200-350 300-400
www.htsemi.com
Ｄａｔｅ：２０１１／０５
Page 2
SS8 550
-0.5
-0.4
-0.3
-0.2
-0.1
[A], COLLECTOR CURRENT
C
I
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10000
-1000
-100
(sat)[mV], SATURATION VO LTAGE
CE
(sat), V
BE
-10
V
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
V
BE(sat)
V
CE(sat)
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
IC=10I
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
B
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
VCE = -1V
VCE = -1V
２
JinYu
semiconductor
100
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
www.htsemi.com
f=1MHz
=0
I
E
1000
100
10
-1 -10 -100 -1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE=-10V
Ｄａｔｅ：２０１１／０５
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