Page 1
Elektronische Bauelemente
FEATURES
Power dissipation
Collector Current
Collector-base voltage
Operating & storage junction temperature
P
CM : 1 W
CM : 1.5 A
I
V(BR)CBO : 40 V
T
j, Tstg : - 55
O
C ~ + 150O C
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
1
2
2
SS8050T
NPN Silicon
TO-92
3
1
3
1
3
2
1. EMITTER
2. BASS
.
COLLECTOR
3
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
(BR)CBO Ic= 100
(BR)CEO
(BR)EBO I
CBO
CEO
EBO
H
FE(1)
Ic=0.1mA，IB=0 25 V
=100μA，IC=0
E
VCB=40 V , IE=0 0.1
VCE=20V, IB=0 0.1
VEB=5V, IC=0 0.1
VCE=1V, IC= 100mA 85 400
A，IE=0
μ
DC current gain
H
FE(2)
VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800 mA,IB= 80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=8 00 mA,IB= 80mA 1.2 V
40 V
5 V
μ
μ
μ
A
A
A
VCE=10V, IC= 50mA
Transition frequency
f
T
100 MHz
f=30MHz
CLASSIFICATION OF h
Rank B C D E
Range 85-160 120-200 160-300 300-400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
FE(1)
Any changing of specification will not be informed individual
Page 1 of 2
Page 2
Elektronische Bauelemente
Typical Characteristics
SS8050T
NPN Silicon
General Purpose Transistor
0.5
0.4
0.3
0.2
0.1
[mA], COLLECTOR CURRENT
C
I
0 0.4 0.8 1.2 1.6 2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
VCE = 1V
Figure 1. Static Characteristic Figure 2. DC current Gain
10000
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
10
V
0.1 1 10 100 1000
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IC = 10 I
B
100
VCE = 1V
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.00.20.40.60.81.01.2
VBE[V], BASE-EMITTER VOLTAGE
Collector-Emitter Saturation Voltage
[pF], CAPACITANCE
ob
C
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Figure 3. Base-Emitter Saturation Voltage
1000
100
10
1
110100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
Figure 4. Base-Emitter On Voltage
1000
100
[MHz],
T
f
10
CURRENT GAIN BANDWIDTH PRODUCT
1
1 10 100 400
IC[mA], COLLECTOR CURRENT
VCE = 10V
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 2 of 2
Loading...