Page 1
Features
• Glass passivated junctions.
• High current capability, low V
• For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
SS22-S210
Discrete POWER & Signal
Technologies
SS22 - S210
0.185 (4.699)
0.083 (2.108)
0.075 (1.905
.
F
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
0.160 (4.064)
)
2
0.220 (5.588)
0.200 (5.080)
1
0.155 (3.937)
0.130 (3.302)
0.096 (2.438)
0.083 (2.108)
0.050 (1.270)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
2.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Average Rectified Current
.375 " lead length @ T
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient ** 75
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +125
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Parameter Device Units
22 23 24 25 26 28 29 210
Peak Repetitive Reverse Volt age 20 30 40 50 60 80 90 100 V
Maximum RMS Voltage 14 21 28 35 42 56 64 80 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current TA = 25°C
(Note 1)
@ rated V
R
TA = 100°C
Maximum Forward Voltage @ 2.0 A 500 700 850 mV
Note: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
20 30 40 50 60 80 90 100 V
= 25°C unless otherwise noted
A
= 75°C
A
= 25°C unless otherwise noted
A
0.4
10
2.0 A
50 A
1.3
13
mW/°C
°
C/W
W
°
C
°
C
mA
mA
1998 Fairchild Semiconductor Corporation
SS22-S210, Rev. A
Page 2
T ypical Characteristics
SS22-S210
Schottky Barrier Rectifiers
(continued)
Forward Current De ratin g Curve
2
1.5
SINGLE PHASE
1
HALF WAVE
60Hz
RESISTIVE OR
INDUCTIVE LOAD
0.5
P.C.B. MOUNTED
FORWAR D CU RRENT (A )
ON 8.0x 8.0mm
COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130 140 150
LEAD TEMPERATURE ( C)
º
Reverse Characteris tics
10
º
T = 100 C
SS22-24
1
0.1
0.01
REVERSE CURRENT (mA)
A
º
T = 75 C
A
T = 25 C
º
A
SS25-S210
Forward Characteristics
50
T = 25 C
º
A
f = 1.0 MHz
20
Vsig = 50mVp- p
10
SS22-24
5
1
SS28 - S210
SS25-26
FORWARD CUR RENT (A)
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
FORWARD VOLTAGE (V)
Junction Capacitance
500
SS22-24
200
100
50
CAPACITANCE (p F)
20
º
T = 25 C
A
f = 1.0 MHz
Vsig = 50mVp-p
SS25-S210
0.001
0 20406080100120140
NORM ALIZED REV ERSE VO LTAGE (%)
Non-Repetitive Surge Current
60
50
40
30
20
10
FORWARD SURGE CURRENT (A)
0
12 51020 50100
10
0.1 0.5 1 5 10 20 50 100
8.3ms Singl e Half Sine -W a ve
JEDEC Method
NUMBER OF CYC LES AT 60Hz
REVERSE VOLTAGE (V)
SS22-S210, Rev. A
Page 3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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that has been discontinued by Fairchild semiconductor.
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