Page 1
Ge-Avalanche Photodiode with Pigtail,
Values
50
*
− 40 … + 85
1
10
Central Pin
SRD 00534X
SRD 00535X
• Designed for application in fiber-optic communication
systems
• Sensitive receiver for the 2
(1300 nm)
nd
optical window
• High gain-bandwidth product
• Suitable for bit rates up to 2.5 Gbit/s and long-haul
transmission
• Planar structure
• Small radiant sensitive area
• Low multiplied dark current
• High spectral sensitivity by built-in optics
• Hermetically sealed metal case with central pin
• With optimally coupled multimode-fiber pigtail
Type Ordering Code Connector/Flange
SRD 00534H Q62702-Pxxxx Pigtail, FC/PC-connector
SRD 00535H Q62702-Pxxxx Pigtail with flange,
FC/PC-connector
Component with other connector types on request.
Maximum Ratings
Parameter Symbol
Forward current I
Reverse voltage V
Operating and storage temperature T
Max. radiant power into the opt. port
(VR = 5 V)
Soldering time (wave / dip soldering), distance
between solder point and base plate
(≥ 2 mm, 260 °C)
Φ
t
F
s
R
A
port
T
stg
Unit
mA
V
°C
mW
s
* Individual value of VBR is delivered with each component.
Semiconductor Group 1 02.95
Page 2
SRD 00534X
Values
0.8 (≥ 0.7)
0.3 (≤ 0.5)
4 (≥ 3)
28 … 40
p
7
≤
1.5
< 200
< 300
20
> 30
SRD 00535X
Characteristics
All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient temperature of
25 °C, unless otherwise defined.
Parameter Symbol
Spectral sensitivity
Sλ
λ = 1310 nm, M = 1
Rise and fall time (10 % − 90 %)
R
= 50 Ω, M = 1, λ = 1310 nm, Φ
L
Multiplication factor at VR = 0.9 V
port
BR
= 100 µW
t
M
; t
r
f
Breakdown voltage
I
= 100 µA V
R
Total capacitance, Φ
V
= 0 V,
R
V
= 25 V
R
= 0, f = 1 MHz
ort
BR
C ≤
Dark current
V
= 10 V
R
V
= 0.9 V
R
BR
Multiplied dark current (M = 10) I
I
D
DM
Unit
A/W
ns
V
pF
pF
nA
nA
≤
nA
Optical return loss R
L
dB
Semiconductor Group 2
Page 3
SRD 00534X
SRD 00535X
Rel. Spectral Sensitivity
M = 1 (V
= 10 V)
R
1
0.8
0.6
0.4
Rel. Sensitivity
0.2
0
800 1000 1200 1400 1600
Wavelength in nm
Dark Current ID = ID(VR / VBR)
Multiplication Factor M = M(V
100
M
ID
10
ID in uA / M
1
0.1
0 0.2 0.4 0.6 0.8 1
VR/VBR
/ VBR)
R
Frequency Response of Sensitivity
S = S(f), λ = 1300 nm
0
-1
-2
-3
-4
-5
-6
Sensitivity in dB
-7
-8
-9
-10
100 10000
Frequency in MHz
M=2
M=8
M=16
M=32
Temperatur Behaviour of Breakdown
Voltage
V
BR
/ V
BR(25 °C)(TA
1.1
1.05
VBR/VBR(25)
0.95
0.9
1
-50 -25 0 25 50 75 100
)
Ambient Temperature in °C
Semiconductor Group 3
Page 4
SRD 00534X
SRD 00535X
Temperature Behaviour of Dark Current
I
/ I
D
D(25 °C)(TA
200
180
160
140
120
100
ID/ID(25)
)
80
60
40
20
0
-50 -25 0 25 50 75 100
Amb ient Temp eratu re in °C
Sensitivity at different input Powers
V
BR
/ V
BR(25 °C)(TA
1
0.9
0.8
0.7
0.6
0.5
0.4
Sensitivity in A/W
0.3
0.2
0.1
0
1.00E-07 1.00E-05 1.00E-03
)
Popt in W
Semiconductor Group 4
Page 5
Package Outlines (Dimensions in mm)
SRD 00534X
SRD 00535X
SRD 00534X
SRD 00535X
Semiconductor Group 5
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