Datasheet SRD00215H, SRD00215C, SRD00214H, SRD00214C Datasheet (Siemens)

Page 1
Ternary PIN Photodiode with Pigtail SRD 00214X
Values
10
20
40+ 85
1
10
SRD 00215X
InGaAs/InP - PIN-photodiode
Designed for telecommunications applications
Sensitive receiver for the 2
(1300 nm and 1500 nm)
nd
and 3
optical window
Suitable for bit rates up to 1.2 Gbit/s
Low junction and low package capacitance
Fast switching times
Low dark current
Low noise
Hermetically sealed 3-pin metal case
With optimally coupled multimode-fiber pigtail
Type Ordering Code Connector/Flange
SRD 00214H Q62702-Pxxxx Pigtail, FC/PC-Multimode
connector
SRD 00215H Q62702-Pxxxx Pigtail with flange, FC/PC-
Multimode connector
SRD 00214C Q62702-P3059 Pigtail, DIN-Multimode
connector
SRD 00215C Q62702-P3060 Pigtail with flange, DIN-
Multimode connector
Component with other connector types on request.
Maximum Ratings Parameter Symbol
Forward current I Reverse voltage V Operating and storage temperature TA T Max. radiant power into the opt. port
(VR = 5 V)
Φ
F
R
stg
port
Unit
mA V °C mW
Soldering time (wave / dip soldering), distance between solder point and base plate, ( 2 mm, 260 °C)
Semiconductor Group 1 02.95
t
s
s
Page 2
SRD 00214x
Values
0.9 ( ≥ 0.75)
0.2
0.3 (≤ 1.0)
1 (≤ 1.5)
1 (< 50)
20
SRD 00215x
Characteristics
All optical data refer to a coupled 10/125 µm SM fiber at ambient temperature of 25 °C, unless otherwise defined.
Parameter Symbol
Spectral sensitivity
S
λ
λ = 1310 nm, VR = 2 V
Change in spectral sensitivity in operating
S
λ
temperature range Rise and fall time (10 % - 90 %)
R
= 50 , VR = 2 V, λ = 1310 nm,
L
Φ
= 100 µW
port
Total capacitance
V
= 2 V, Φ
R
= 0, f = 1 MHz
port
Dark current
V
= 2 V, TA = 85 °C, Φ
R
port
= 0
t
C
I
; t
r
f
2
D
Backreflection of optical power into optical port R
Unit
A/W
%/K
ns
pF
nA
dB
Semiconductor Group 2
Page 3
SRD 00214x
T
SRD 00215x
Capacitance C = f(VR)
Φ
= 0, f = 1 MHz
port
10
1
Capacitance in pF
0.1
0.1 1 10 100
Reverse Bias in V
Relative Spectral Sensitivity
V
= 5 V
R
1 0,9 0,8 0,7 0,6 0,5 0,4 0,3
Sensitivity in A/W
0,2 0,1
0
800 1200 1600 2000
Wav e lengt h in nm
Dark Current IR = f(VR)
I
= f(VF)
F
10
1
0.1
Dark Current in nA
0.01
0.001 0 5 10 15 20
Reverse Bias in V
Dark Current IR = f(
Φ
= 0, VR = 5 V
port
100
10
1
0.1
Dark Current in nA
0.01
0.001
-50 0 50 100
Ambient Temperature in °C
)
A
Semiconductor Group 3
Page 4
Package Outlines (Dimensions in mm)
SRD 00214x SRD 00215x
SRD 00214X
SRD 00215X
Semiconductor Group 4
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