Datasheet SR705 Datasheet (POLYFET)

polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Total
Device
Dissipation

410

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Junction to
Case Thermal
Resistance

o

Watts V

0.40

C/W

Maximum
Junction
Temperature

SR705

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORVDMOS

200.0

Watts

Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage
Temperature

o

-65 C to 150 C200 C A V

DC Drain
Current

oo

24.0

Drain to
Gate
Voltage

70 V

Push - Pull

AR

Drain to
Source
Voltage

70

Gate to
Source
Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR

10

55

200.0

WATTS OUTPUT )

20:1 Relative

dB

%

1.20

Idq = A, Vds = V, F =
Idq =

1.20

A, Vds = V, F =

Idq = 1.20

A, Vds = V, F =

28.0

28.0

28.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

65

5.0

1

1 7

6.0

0.20

35.00

250.0

15.0

160.0

V

mA

uA

V

Mho

Ohm

Amp

pF
pF
pF

100.00Ids = mA, Vgs = 0V

Vds =
Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V

Vds =
Vds =
Vds =

28.0

0.50

V, Vgs = 0V

A, Vgs = VdsIds =

12.50

Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0

MHz

400
400

MHz

400

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 03/28/2001

Id in amps; Gm in mhos

SR705

POUT VS PIN GRAPH

SR705 Pin vs Pout F=400 MHZ; IDQ=1.2A; VDS=28V

240

200

160

120

80

40

0

0 5 10 15 20 25 30

Efficiency = 55%

PIN IN WATTS

S1A 5 DIE IV

40

35

30

25

20

ID IN AMPS

15

10

5

0

0 2 4 6 8 10 12 14 16 18 20

vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v

VDS IN VOLTS

Pout

Gain

CAPACITANCE VS VOLTAGE

S1A 5 DICE CAPACITANCE

12

11

10

9

1000

Ciss

100

10

0 5 10 15 20 25 30

Coss

Crss

VDS IN VOLTS

ID & GM VS VGSIV CURVE

100.00

10.00

1.00

0 2 4 6 8 10 12 14

S1A 5 DIE ID & GM Vs VG

Id

gM

Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 03/28/2001