Datasheet SR401 Datasheet (POLYFET)

polyfet rf devices

General Description

Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.

Total
Device
Dissipation

465

TM

t

ABSOLUTE MAXIMUM RATINGS ( T =

Junction to
Case Thermal
Resistance

o

Watts V

0.35 C/W

Maximum
Junction
Temperature

200

SILICON GATE ENHANCEMENT MODE

RF POWER TRANSISTORVDMOS

300.0
Package Style

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

o

25 C )

Storage
Temperature

o

-65 C to 150 C C A V

DC Drain
Current

oo

27.0

Drain to
Gate
Voltage

70 V

Watts

Push - Pull

AR

Drain to
Source
Voltage

70

SR401

Gate to
Source
Voltage

20

Gps

η

Bvdss

Idss
Igss

Vgs

Idsat
Ciss
Crss
Coss

RF CHARACTERISTICS (

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR

13

55

300.0

WATTS OUTPUT )

20:1 Relative

dB

%

1.20

Idq = A, Vds = V, F =
Idq =

1.20

A, Vds = V, F =

Idq = 1.20

A, Vds = V, F =

28.0

28.0

28.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V

Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance

65

6.0

1

1 7

7.2

0.16

42.00

300.0

15.0

200.0

V

mA

uA

V

Mho

Ohm

Amp

pF
pF
pF

120.00Ids = mA, Vgs = 0V

Vds =
Vds = 0V Vgs = 30V

Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V

Vds =
Vds =
Vds =

28.0

0.60

V, Vgs = 0V

A, Vgs = VdsIds =

15.00

Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0
Vgs = 0V, F = 1 MHz28.0

MHz

175
175

MHz

175

MHz

A

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 10/08/2001

Id in amps; Gm in mhos

SR401 Pin vs Pout Freq=175Mhz;

SR401

POUT VS PIN GRAPH

320

280

240

200

160

120

80

40

0

0 5 10 15 20

45
40
35
30
25
20

ID IN AMPS

15
10

5
0

0 2 4 6 8 10 12 14 16 18 20

Vds=28Vdc, Idq=1.2A

P1dB = 200W

Efficiency @200W = 52%

Pin in Watts

S4A 1 DIE IV

VDS IN VOLTS

Pout

Gain

vg=2v Vg=4v
Vg=6v Vg=8v
Vg=10v vg=12v

18

17

16

15

14

13

12

CAPACITANCE VS VOLTAGE

1000

100

10

0 5 10 15 20 25 30

S4 1 DIE CAPACITANCE

Ciss

Coss

Crss

VDS IN VOLTS

ID & GM VS VGSIV CURVE

100.00

10.00

1.00

0 2 4 6 8 10 12 14

S4A 1 DIE ID & GM Vs VG

Id

gM

Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:[phone] FAX: [phone] EMAIL:[e-mail] URL:www.polyfet.com

REVISION 10/08/2001