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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Total
Device
Dissipation
500
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Junction to
Case Thermal
Resistance
o
Watts V
0.30
C/W
Maximum
Junction
Temperature
SR341
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORVDMOS
300.0
Watts
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
25.0
Drain to
Gate
Voltage
125 V
Push - Pull
AR
Drain to
Source
Voltage
125
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
16
65
300.0
WATTS OUTPUT )
20:1 Relative
dB
%
0.80
Idq = A, Vds = V, F =
Idq =
0.80
A, Vds = V, F =
Idq = 0.80
A, Vds = V, F =
50.0
50.0
50.0
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
125
5.0
1
1 7
5.5
0.30
35.00
400.0
15.0
200.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
40.00Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
50.0
0.30
V, Vgs = 0V
A, Vgs = VdsIds =
6.00
Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0
MHz
175
175
MHz
175
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 07/10/2001
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Id in amps; Gm in mhos
Coss
SR341
POUT VS PIN GRAPH
SR341 Pin vs Pout Freq=175Mhz; Idq=1A; Vds=50V
500
450
400
350
Efficiency = 55%
300
250
200
150
100
50
0
0 5 10 15 20
35
30
25
20
1dB compression = 300W
Pin in Watts
S3E 1 DIE IV
Pout
Gain
CAPACITANCE VS VOLTAGE
19
18
17
16
15
14
13
1000
100
10
0 10 20 30 40 50
S3E 1 DIE CAPACITANCE
Ciss
Crss
VDS IN VOLTS
ID & GM VS VGSIV CURVE
100.00
10.00
S3E 1 DIE ID & GM Vs VG
Id
15
ID IN AMPS
10
5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v
VDS IN VOLTS
Zin Zout PACKAGE DIMENSIONS IN INCHES
1.00
gM
0.10
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/10/2001
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