Datasheet SR05.TC, SR05.TG Datasheet (Semtech Corporation)

Page 1
PROTECTION PRODUCTS
SR05

RailClamp
Low Capacitance TVS Diode Array

RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive compo­nents which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), EFT (electrical fast transients), and light-
ning.
The unique design of the SR series devices incorpo­rates four surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient to either the positive side of the power supply line or to ground. The internal TVS diode prevents over-voltage on the power line, protecting any downstream compo­nents.
The low capacitance array configuration allows the user to protect two high-speed data or transmission lines. The low inductance construction minimizes voltage overshoot during high current surges.
Features
! ESD protection to IEC 61000-4-2, Level 4 ! Array of surge rated diodes with internal TVS Diode ! Protects two I/O lines ! Low capacitance (<10pF) for high-speed interfaces ! Low clamping voltage ! Low operating voltage: 5.0V ! Solid-state silicon-avalanche technology
Mechanical Characteristics
! JEDEC SOT-143 package ! UL 497B listed ! Molding compound flammability rating: UL 94V-0 ! Marking : R05 ! Packaging : Tape and Reel per EIA 481
Applications
! USB Power & Data Line Protection ! Ethernet 10BaseT
2
! I
C Bus Protection
! Video Line Protection ! T1/E1 secondary IC Side Protection ! Portable Electronics ! Microcontroller Input Protection ! WAN/LAN Equipment ! ISDN S/T Interface
Circuit Diagram Schematic & PIN Configuration
Pin 4
1
Pin 2
Revision 9/2000
Pin 3
23
Pin 1
SOT-143 (Top View)
1
4
www.semtech.com
Page 2
PROTECTION PRODUCTS
Absolute Maximum Rating
SR05
gnitaRlobmySeulaVstinU
)sµ02/8=pt(rewoPesluPkaePP
I(egatloVdrawroFkaeP
F
erutarepmeTgniredloSdaeLT
erutarepmeTgnitarepOT
erutarepmeTegarotST
Electrical Characteristics
50RS
retemaraPlobmySsnoitidnoCmuminiMlacipyTmumixaMstinU
egatloVffO-dnatSesreveRV
egatloVnwodkaerBesreveRV
tnerruCegakaeLesreveRI
egatloVgnipmalCV
kp
)sµ02/8=pt(tnerruCesluPkaePI
)sµ02/8=pt,A1=V
MWR
I
RB
R
C
V
MWR
I
PP
Am1=6 V
t
C°52=T,V5=5Aµ
PP
PF
L
J
GTS
sµ02/8=pt,A1=8.9V
005sttaW
52A
5.1V ).ces01(062C°
521+ot55-C° 051+ot55-C°
5V
egatloVgnipmalCV egatloVgnipmalCV
ecnaticapaCnoitcnuJC
C
C
j
I
PP
I
PP
sµ02/8=pt,A01=21V sµ02/8=pt,A52=02V
dnasnipO/IneewteB
dnG
V
R
zHM1=f,V0=
snipO/IneewteB
V
R
zHM1=f,V0=
601Fp
3Fp
2 2000 Semtech Corp.
www.semtech.com
Page 3
PROTECTION PRODUCTS
e
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve
SR05
10
(kW)
PP
1
0.1
Peak Pulse Power - P
0.01
0.1 1 10 100 1000
Pulse Duration - tp (µµµµs)
Pulse Waveform
110 100
90 80 70
PP
60 50 40
Percent of I
30 20 10
0
0 5 10 15 20 25 30
-t
e
td = IPP/2
Time (µµµµs)
Waveform
Parameters:
tr = 8µs
td = 20µs
110 100
90
PP
80 70 60 50 40 30
% of Rated Power or I
20 10
0
0 25 50 75 100 125 150
Ambient Temperature - T
A
(oC)
Clamping Voltage vs. Peak Pulse Current
10
9 8
(V)
F
7 6 5 4 3
Forward Voltage - V
2 1 0
0 5 10 15 20 25 30 35 40 45 50
Forward Current - I
(A)
F
Waveform
Parameters:
td = 20µs
tr = 8µs
Forward Voltage vs. Forward Current Capacitance vs. Reverse Voltage
10
9 8
(V)
F
7 6 5 4 3
Forward Voltage - V
2 1 0
0 5 10 15 20 25 30 35 40 45 50
Forward Current - I
(A)
F
Waveform
Parameters:
tr = 8µs
td = 20µs
3 2000 Semtech Corp.
0
-2
-4
-6
-8
-10
-12
% Change in Capacitanc
-14
-16 0123456
Reverse Voltage (V)
I/O to GND
f = 1MHz
www.semtech.com
Page 4
PROTECTION PRODUCTS
Applications Information
Device Connection Options for Protection of Two High-Speed Data Lines
The SR05 TVS is designed to protect two data lines from transient over-voltages by clamping them to a fixed reference. When the voltage on the protected line exceeds the reference voltage (plus diode V steering diodes are forward biased, conducting the transient current away from the sensitive circuitry. Data lines are connected at pins 2 and 3. The nega­tive reference (REF1) is connected at pin 1. This pin should be connected directly to a ground plane on the board for best results. The path length is kept as short as possible to minimize parasitic inductance. The positive reference (REF2) is connected at pin 4. The options for connecting the positive reference are as follows:
1. To protect data lines and the power line, connect pin 4 directly to the positive supply rail (VCC). In this configuration the data lines are referenced to the supply voltage. The internal TVS diode prevents over-voltage on the supply rail.
2. The SR05 can be isolated from the power supply by adding a series resistor between pin 4 and VCC. A value of 10k is recommended. The internal TVS and steering diodes remain biased, providing the advantage of lower capacitance.
3. In applications where no positive supply reference is available, or complete supply isolation is desired, the internal TVS may be used as the reference. In this case, pin 4 is not connected. The steering diodes will begin to conduct when the voltage on the protected line exceeds the working voltage of the TVS (plus one diode drop).
) the
F
SR05
Data Line and Power Supply Protection Using Vcc as reference
Data Line Protection with Bias and Power Supply Isolation Resistor
Data Line Protection Using Internal TVS Diode as Reference
ESD Protection With RailClamps
RailClamps are optimized for ESD protection using the rail-to-rail topology. Along with good board layout, these devices virtually eliminate the disadvantages of using discrete components to implement this topology. Consider the situation shown in Figure 1 where dis­crete diodes or diode arrays are configured for rail-to­rail protection on a high speed line. During positive duration ESD events, the top diode will be forward biased when the voltage on the protected line exceeds the reference voltage plus the V
drop of the diode.
F
4 2000 Semtech Corp.
www.semtech.com
Page 5
PROTECTION PRODUCTS
Applications Information (continued)
For negative events, the bottom diode will be biased when the voltage exceeds the V approximation, the clamping voltage due to the charac­teristics of the protection diodes is given by:
V
= VCC + VF(for positive duration pulses)
PIN Descriptions
C
V
C
= -V
F
(for negative duration pulses)
However, for fast rise time transient events, the effects of parasitic inductance must also be consid­ered as shown in Figure 2. Therefore, the actual clamping voltage seen by the protected circuit will be:
of the diode. At first
F
SR05
V
= VCC + VF + LP di
C
VC = -VF - LG di
ESD
/dt (for positive duration pulses)
ESD
/dt (for negative duration pulses)
ESD current reaches a peak amplitude of 30A in 1ns for a level 4 ESD contact discharge per IEC 1000-4-2. Therefore, the voltage overshoot due to 1nH of series inductance is:
V = LP di
/dt = 1X10-9 (30 / 1X10-9) = 30V
ESD
Example: Consider a VCC = 5V, a typical VF of 30V (at 30A) for the steering diode and a series trace inductance of 10nH. The clamping voltage seen by the protected IC for a positive 8kV (30A) ESD pulse will be:
VC = 5V + 30V + (10nH X 30V/nH) = 335V This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any components that are attached to that rail. Also note that it is not uncommon for the VF of discrete diodes to exceed the damage threshold of the protected IC. This is due to the relatively small junction area of typical discrete components. It is also possible that the power dissipation capability of the discrete diode will be exceeded, thus destroying the device.
Figure 1 - “Rail-Figure 1 - “Rail-
Figure 1 - “Rail-
Figure 1 - “Rail-Figure 1 - “Rail-
Figure 2 - The Effects of Parasitic InductanceFigure 2 - The Effects of Parasitic Inductance
Figure 2 - The Effects of Parasitic Inductance
Figure 2 - The Effects of Parasitic InductanceFigure 2 - The Effects of Parasitic Inductance
When Using Discrete Components to ImplementWhen Using Discrete Components to Implement
When Using Discrete Components to Implement
When Using Discrete Components to ImplementWhen Using Discrete Components to Implement
TT
o-Rail” Pro-Rail” Pr
T
o-Rail” Pr
TT
o-Rail” Pro-Rail” Pr
(First Approximation)(First Approximation)
(First Approximation)
(First Approximation)(First Approximation)
Rail-Rail-
TT
o-Rail Pro-Rail Pr
Rail-
T
o-Rail Pr
Rail-Rail-
TT
o-Rail Pro-Rail Pr
oo
tt
ection Tection T
o
t
ection T
oo
tt
ection Tection T
oo
tt
ectionection
o
t
ection
oo
tt
ectionection
opologyopology
opology
opologyopology
The RailClamp is designed to overcome the inherent disadvantages of using discrete signal diodes for ESD suppression. The RailClamp’s integrated TVS diode helps to mitigate the effects of parasitic inductance in
Figure 3 - Rail-Figure 3 - Rail-
Figure 3 - Rail-
Figure 3 - Rail-Figure 3 - Rail-
RailClamRailClam
RailClam
RailClamRailClam
5 2000 Semtech Corp.
TT
o-Rail Pro-Rail Pr
T
o-Rail Pr
TT
o-Rail Pro-Rail Pr
p Tp T
VV
p T
V
p Tp T
VV
oo
tt
ection Usingection Using
o
t
ection Using
oo
tt
ection Usingection Using
S ArraS Arra
S Arra
S ArraS Arra
ysys
ys
ysys
www.semtech.com
Page 6
PROTECTION PRODUCTS
Applications Information (continued)
the power supply connection. During an ESD event, the current will be directed through the integrated TVS diode to ground. The total clamping voltage seen by the protected IC due to this path will be:
SR05
VC = V
F(RailClamp)
+ V
TVS
This is given in the data sheet as the rated clamping voltage of the device. For a SR05 the typical clamping voltage is <16V at I
=30A. The diodes internal to the
PP
RailClamp are low capacitance, fast switching devices that are rated to handle transient currents and main­tain excellent forward voltage characteristics.
Universal Serial Bus ESD Protection
The figure below illustrates how to use the SR05 to protect one upstream USB port and the SRDA05-4 to protect two downstream USB ports. When the voltage on the data lines exceed the bus voltage (plus one diode drop), the internal rectifiers are forward biased conducting the transient current away from the pro­tected controller chip. The TVS diode directs the surge to ground. The TVS diode also acts to suppress ESD strikes directly on the voltage bus. Thus, both power and data pins are protected with a single device. Reference Semtech application note SI96-18 for further information.
6 2000 Semtech Corp.
www.semtech.com
Page 7
PROTECTION PRODUCTS
Typical Applications
SR05
Universal Serial Bus ESD Protection
ISDN S/T Interface Protection
7 2000 Semtech Corp.
www.semtech.com
Page 8
PROTECTION PRODUCTS
Outline Drawing - SOT-143
SR05
Notes: (1) Controlling dimension: Inch (unless otherwise specified). (2) Dimension A and B do not include mold protrusions. Mold protrusions are .006” max.
Land Pattern - SOT-143
8 2000 Semtech Corp.
www.semtech.com
Page 9
PROTECTION PRODUCTS
Marking Codes
SR05
rebmuNtraP
50RS50R
edoC
Ordering Information
traP
rebmuN
CT.50RSV5000,3hcnI7 GT.50RSV5000,01hcnI31
gnikroW
egatloV
gnikraM
repytQ
leeR
eziSleeR
Contact Information
Semtech Corporation
Protection Products Division
652 Mitchell Rd., Newbury Park, CA 91320
Phone: (805)498-211 1 FAX (805)498-3804
9 2000 Semtech Corp.
www.semtech.com
Loading...