Datasheet SQM120N10-3m8 Specification

TO-263

S

D

G

Top View

SQM120N10-3m8

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Vishay Siliconix

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

VDS (V) 100

() at VGS = 10 V 0.0038

R

DS(on)

(A) 120

I

D

Configuration Single

FEATURES

•TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualified

•100 % Rg and UIS Tested

d

• Material categorization:

D

For definitions of compliance please see

www.vishay.com/doc?99912

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package TO-263

Lead (Pb)-free and Halogen-free SQM120N10-3m8-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current

Continuous Source Current (Diode Conduction)

Pulsed Drain Current

a

a

b

Single Pulse Avalanche Current

Single Pulse Avalanche Energy E

Maximum Power Dissipation

b

TC = 25 °C

T

= 125 °C 120

C

L = 0.1 mH

TC = 25 °C

T

= 125 °C 125

C

Operating Junction and Storage Temperature Range T

DS

± 20

GS

I

D

I

S

IDM 480

I

AS

AS

P

D

, T

J

stg

100

V

120

120

A

73

266 mJ

375

W

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

Junction-to-Case (Drain) R

Notes

a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.

S13-1433-Rev. A, 01-Jul-13

1

For technical questions, contact: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

R

thJA

thJC

40

0.4

°C/W

Document Number: 63404

SQM120N10-3m8

www.vishay.com

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

a

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

I

a

R

b

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge

Gate-Drain Charge

c

c

c

Gate Resistance R

Turn-On Delay Time

Rise Time

c

Turn-Off Delay Time

Fall Time

c

c

c

Source-Drain Diode Ratings and Characteristics

Pulsed Current

a

Forward Voltage V

DS

GS(th)

V

GSS

DSS

V

D(on)

DS(on)

g

fs

iss

- 3070 3840

oss

- 305 385

rss

Qg

Qgs -28-

Qgd -46-

g

t

d(on)

t

r

t

-4060

d(off)

tf -1220

b

I

SM

SD

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

VGS = 0 V VDS = 100 V - - 1

V

V

V

V

V

VGS = 0, ID = 250 μA 100 - -

VDS = VGS, ID = 250 μA 2.5 3.0 3.5

= 0 V, VGS = ± 20 V - - ± 100 nA

DS

= 0 V VDS = 100 V, TJ = 125 °C - - 50

GS

= 0 V VDS = 100 V, TJ = 175 °C - - 500

GS

= 10 V VDS5 V 120 - - A

GS

= 10 V ID = 20 A - 0.0030 0.0038

GS

= 10 V ID = 20 A, TJ = 125 °C - - 0.0064

GS

= 10 V ID = 20 A, TJ = 175 °C - - 0.0080

GS

VDS = 15 V, ID = 20 A - 82 - S

= 0 V VDS = 25 V, f = 1 MHz

GS

= 10 V VDS = 50 V, ID = 70 A

GS

f = 1 MHz 1.6 3.3 5 

= 50 V, RL = 0.7 

V

DD

I

 70 A, V

D

= 10 V, Rg = 1 

GEN

IF = 100 A, V

= 0 - 0.9 1.5 V

GS

Vishay Siliconix

- 5780 7230

- 125 190

-1625

- 110 165

- - 480 A

V

μA V

V

pF Output Capacitance C

nC Gate-Source Charge

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S13-1433-Rev. A, 01-Jul-13

2

Document Number: 63404

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0

40

80

120

160

200

0 14 28 42 56 70

g

fs

- Transconductance (S)

ID - Drain Current (A)

TC = - 55 °C

TC = 25 °C

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

150

200

150

VGS = 10 V thru 7 V

V

= 6 V

120

90

SQM120N10-3m8

Vishay Siliconix

100

- Drain Current (A)

D

I

50

0

0 2 4 6 8 10

VDS - Drain-to-Source Voltage (V)

Output Characteristics

Transconductance

V

= 5 V

TC = 125 °C

60

- Drain Current (A)

D

I

30

0

0 2 4 6 8 10

TC = 125°C

TC = - 55°C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

0.010

0.008

0.006

0.004

- On-Resistance (Ω)

DS(on)

R

0.002

0.000
0 20 40 60 80 100 120

ID - Drain Current (A)

VGS = 10 V

On-Resistance vs. Drain Current

TC = 25°C

10000

8000

6000

4000

C - Capacitance (pF)

2000

0

0 20 40 60 80 100

C

VDS - Drain-to-Source Voltage (V)

Capacitance

S13-1433-Rev. A, 01-Jul-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

10

8

C

C

6

4

- Gate-to-Source Voltage (V)

GS

V

2

0

0 30 60 90 120 150

3

For technical questions, contact: [e-mail]

ID = 70 A

= 50 V

V

DS

Qg - Total Gate Charge (nC)

Gate Charge

Document Number: 63404

- 1.9

- 1.4

- 0.9

- 0.4

0.1

0.6

- 50 - 25 0 25 50 75 100 125 150 175

V

GS(th)

Variance (V)

TJ - Temperature (°C)

D

= 250 μA

D

= 5 mA

100

105

110

115

120

125

- 50 - 25 0 25 50 75 100 125 150 175

V

DS

- Drain-to-Source Voltage (V)

TJ - Junction Temperature (°C)

ID = 10 mA

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

SQM120N10-3m8

Vishay Siliconix

2.1

ID = 20 A

1.8

1.5

1.2

- On-Resistance (Normalized)

0.9

DS(on)

R

0.6

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

0.020

0.016

0.012

VGS = 10 V

100

10

1

0.1

- Source Current (A)

S

I

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

TJ = 25 °C

VSD - Source-to-Drain Voltage (V)

Source Drain Diode Forward Voltage

I

0.008

- On-Resistance (Ω)

DS(on)

R

0.004

0.000
0 2 4 6 8 10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

S13-1433-Rev. A, 01-Jul-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TJ = 150 °C

TJ = 25 °C

Drain Source Breakdown vs. Junction Temperature

4

For technical questions, contact: [e-mail]

I

Threshold Voltage

Document Number: 63404

0.01

0.1

1

10

100

1000

0.01 0.1 1 10 100

I

D

- Drain Current (A)

VDS - Drain-to-Source Voltage (V)

* V

GS

> minimum VGS at which R

DS(on)

is specied

Limited by R

)

*

IDM Limited

Single Pulse

BVDSS Limited

100 ms, 1 s, 10 s, DC

ID Limited

10

-4

10

-3

10

-2

10

-1

1 10 100 1000

1

0.01

0.001

0.1

0.0001

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

DS(on

TC = 25 °C

Safe Operating Area

SQM120N10-3m8

Vishay Siliconix

100 μs

1 ms

10 ms

S13-1433-Rev. A, 01-Jul-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Normalized Thermal Transient Impedance, Junction-to-Ambient

5

For technical questions, contact: [e-mail]

Document Number: 63404

SQM120N10-3m8

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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

10

Note

• The characteristics shown in the two graphs

- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)

- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

0.02

Single Pulse

0.05

-3

10

-2

10

Square Wave Pulse Duration (s)

-1

10

Normalized Thermal Transient Impedance, Junction-to-Case

1

Vishay Siliconix

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63404

S13-1433-Rev. A, 01-Jul-13

.

6

Document Number: 63404

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

DETAIL A (ROTATED 90°)

SECTION A-A

0° - 5°

L1

L4

M

c1

c

b1

b

E

-A-

A

A

e

0.010 M A

2 PL

TO-263 (D2PAK): 3-LEAD

-B-

A

L2

D

L

L3

b2

b

M

Detail “A”

c2

c

Package Information

Vishay Siliconix

6

D4

D1

D2

D3

E1

K

E3

E2

Notes

1. Plane B includes maximum features of heat sink tab and plastic.

2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.

3. Pin-to-pin coplanarity max. 4 mils.

4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.

5. Use inches as the primary measurement.

6. This feature is for thick lead.

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.160 0.190 4.064 4.826

b 0.020 0.039 0.508 0.990

b1 0.020 0.035 0.508 0.889

b2 0.045 0.055 1.143 1.397

Thin lead 0.013 0.018 0.330 0.457

c*

Thick lead 0.023 0.028 0.584 0.711

Thin lead 0.013 0.017 0.330 0.431

c1

Thick lead 0.023 0.027 0.584 0.685

c2 0.045 0.055 1.143 1.397

D 0.340 0.380 8.636 9.652

D1 0.220 0.240 5.588 6.096

D2 0.038 0.042 0.965 1.067

D3 0.045 0.055 1.143 1.397

D4 0.044 0.052 1.118 1.321

E 0.380 0.410 9.652 10.414

E1 0.245 - 6.223 -

E2 0.355 0.375 9.017 9.525

E3 0.072 0.078 1.829 1.981

e 0.100 BSC 2.54 BSC

K 0.045 0.055 1.143 1.397

L 0.575 0.625 14.605 15.875

L1 0.090 0.110 2.286 2.794

L2 0.040 0.055 1.016 1.397

L3 0.050 0.070 1.270 1.778

L4 0.010 BSC 0.254 BSC

M - 0.002 - 0.050

ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843

Revison: 30-Sep-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

1

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 71198

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635
(16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397
11-Apr-05

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1

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Revision: 08-Feb-17

1

Document Number: 91000