Datasheet sqd40n10-25 Datasheet

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Automotive

N-Channel 100 V (D-S) 175 °C MOSFET

SQD40N10-25

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

() at VGS = 10 V 0.025

DS(on)

() at VGS = 4.5 V 0.029

DS(on)

(A) 40

Configuration Single

TO-252

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

•TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualified

• Compliant to RoHS Directive 2002/95/EC

• Find out more about Vishay’s Automotive Grade Product

Requirements at: www.vishay.com/applications

Drain Connected to Tab

SGD

Top View

N-Channel MOSFET

ORDERING INFORMATION

Package TO-252

Lead (Pb)-free and Halogen-free SQD40N10-25-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °Ca

Continuous Drain Current

Continuous Source Current (Diode Conduction)

Pulsed Drain Current

Single Pulse Avalanche Energy

Single Pulse Avalanche Current I

Maximum Power Dissipation

= 125 °C 26

L = 0.1 mH

TC = 25 °C

= 125 °C 45

Operating Junction and Storage Temperature Range T

± 20

IDM 160

, T

stg

100

80 mJ

40 A

136

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

Junction-to-Case (Drain) R

Notes

a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.

Document Number: 69064 www.vishay.com S10-1997-Rev. B, 20-Sep-10 1

thJA

thJC

1.1

°C/W

Page 2

SQD40N10-25

Vishay Siliconix

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Diode Ratings and Characteristics

Pulsed Current

Forward Voltage V

GS(th)

GSS

DSS

D(on)

DS(on)

iss

- 312 390

oss

- 127 160

rss

Qgs -8.2-

Qgd -13-

d(on)

-2741

d(off)

tf -69

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

VGS = 0 V, ID = 250 μA 100 - -

VDS = VGS, ID = 250 μA 1.5 - 2.5

= 0 V, VGS = ± 20 V - - ± 100 nA

VGS = 0 V VDS = 100 V - - 1.0

= 0 V VDS = 100 V, TJ = 125 °C - - 50

= 0 V VDS = 100 V, TJ = 175 °C - - 250

= 10 V VDS5 V 50 - - A

= 10 V ID = 40 A - 0.019 0.025

= 10 V ID = 40 A, TJ = 125 °C - - 0.050

= 10 V ID = 40 A, TJ = 175 °C - - 0.063

= 4.5 V ID = 20 A - 0.021 0.029

VDS = 15 V, ID = 40 A - 73 - S

- 2703 3380

= 0 V VDS = 25 V, f = 1 MHz

-4670

= 10 V VDS = 50 V, ID = 40 A

-1117

= 50 V, RL = 1.25 

 40 A, V

= 10 V, Rg = 1 

GEN

-1117

- - 160 A

IF = 40 A, V

= 0 V - 0.9 1.5 V

μA V



pF Output Capacitance C

nC Gate-Source Charge

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 69064 2 S10-1997-Rev. B, 20-Sep-10

Page 3

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

100

120

048121620

VGS=10Vthru5V

VGS=4V

VGS=3V

VDS - Drain-to-Source Voltage (V)

- Drain Current (A)

0.02

0.04

0.06

0.08

0.10

0 20406080100

VGS=4.5V

VGS=10V

DS(on)

- On-Resistance (Ω)

ID - Drain Current (A)

100

012345

TC= 125 °C

TC= 25 °C

TC= - 55 °C

VGS - Gate-to-Source Voltage (V)

- Drain Current (A)

1000

2000

3000

4000

0 20406080100

iss

oss

rss

VDS - Drain-to-Source Voltage (V)

C - Capacitance (pF)

SQD40N10-25

Vishay Siliconix

Output Characteristics

1.5

1.2

0.9

0.6

- Drain Current (A)

0.3

012345

TC= 25 °C

TC= 125 °C

TC= - 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

125

100

TC= - 55 °C

- Transconductance (S)

0 1224364860

TC= 125 °C

ID- Drain Current (A)

TC= 25 °C

Transconductance

On-Resistance vs. Drain Current

Document Number: 69064 www.vishay.com S10-1997-Rev. B, 20-Sep-10 3

Capacitance

Page 4

SQD40N10-25

0 1020304050

ID=40A

VDS=50V

Qg - Total Gate Charge (nC)

- Gate-to-Source Voltage (V)

TJ= 25 °C

TJ= 150 °C

0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.001

0.1

100

VSD - Source-to-Drain Voltage (V)

- Source Current (A)

- 50 - 25 0 25 50 75 100 125 150 175

ID=5mA

ID= 250 μA

GS(th)

Variance (V)

TJ - Temperature (°C)

- 1.5

- 1.1

- 0.7

- 0.3

0.1

0.5

0.9

1.3

1.7

2.1

2.5

- 50 - 25 0 25 50 75 100 125 150 175

ID=40A

VGS=10V

TJ - Junction Temperature (°C)

(Normalized)

DS(on)

- On-Resistance

0.04

0.08

0.12

0.16

0.20

0246810

TJ= 25 °C

TJ= 150 °C

DS(on)

- On-Resistance (Ω)

VGS - Gate-to-Source Voltage (V)

100

106

112

118

124

130

- 50 - 25 0 25 50 75 100 125 150 175

- Drain-to -Source Voltage (V)

TJ- Junction Temperature (°C)

ID= 10 mA

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

www.vishay.com Document Number: 69064 4 S10-1997-Rev. B, 20-Sep-10

Drain Source Breakdown vs. Junction Temperature

Page 5

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

VDS- Drain-to-Source Voltage (V)

* V

minimum VGS at which R

DS(on)

is specified

Drain Current (A)I

TC = 25 °C Single Pulse

1 ms

100 ms, 1 s, 10 s, DC

100 µs

DS(on)*

Limited by

10 ms

0.01 0.1 1 10 100

BVDSS Limited

IDM Limited

0.01

0.1

100

1000

Limited

Square Wave Pulse Duration (s)

0.1

0.01 10

-4

-3

-2

-1

Normalized Effective Transient

Thermal Impedance

1000

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1001

Safe Operating Area

SQD40N10-25

Vishay Siliconix

Document Number: 69064 www.vishay.com S10-1997-Rev. B, 20-Sep-10 5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Page 6

SQD40N10-25

Vishay Siliconix

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Duty Cycle = 0.5

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

Note

• The characteristics shown in the two graphs

- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)

- Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.

0.05

0.02

Single Pulse

-3

-2

Square Wave Pulse Duration (s)

-1

Normalized Thermal Transient Impedance, Junction-to-Case

100

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69064

www.vishay.com Document Number: 69064 6 S10-1997-Rev. B, 20-Sep-10

Page 7

TO-252AA CASE OUTLINE

Package Information

Vishay Siliconix

gage plane height (0.5 mm)

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 2.21 2.38 0.087 0.094

A1 0.89 1.14 0.035 0.045

A2 0.030 0.127 0.001 0.005

b 0.71 0.88 0.028 0.035

b1 0.76 1.14 0.030 0.045

b2 5.23 5.44 0.206 0.214

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.97 6.22 0.235 0.245

D1 4.10 4.45 0.161 0.175

E 6.48 6.73 0.255 0.265

E1 4.49 5.50 0.177 0.217

e 2.28 BSC 0.090 BSC

e1 4.57 BSC 0.180 BSC

H 9.65 10.41 0.380 0.410

L 1.40 1.78 0.055 0.070

L1 0.64 1.02 0.025 0.040

L2 0.89 1.27 0.035 0.050

L3 1.15 1.52 0.040 0.060

ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347

Note

• Dimension L3 is for reference only.

Document Number: 71197 www.vishay.com 18-Apr-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

Page 8

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243 (6.180)

Return to Index

0.420 (10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3

Page 9

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1