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SQD40N06-14L
Specification
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Datasheet SQD40N06-14L Specification

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Page 1
SQD40N06-14L
TO-252
Top View
TO
G
D
S
Drain connected to tab
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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 60
R
(Ω) at VGS = 10 V 0.014
DS(on)
R
(Ω) at VGS = 4.5 V 0.017
DS(on)
I
(A) 40
D
Configuration Single
Package TO-252
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % R
• AEC-Q101 qualified
• Material categorization: for definitions of compliance please see
www.vishay.com/doc?99912
and UIS tested
g
d
G
N-Channel MOSFET
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy E
Maximum Power Dissipation
b
C
T
= 125 °C 29
C
a
L = 0.1 mH
TC = 25 °C
= 125 °C 25
T
C
a
Operating Junction and Storage Temperature Range T
DS
± 20
GS
I
D
I
S
IDM 160
I
AS
AS
P
D
, T
J
stg
60
V
40
40
A
32
51 mJ
75
W
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
Junction-to-Case (Drain) R
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
S15-1873-Rev. C, 10-Aug-15
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
c
1
R
thJA
thJC
60
2
Document Number: 67002
°C/W
Page 2
SQD40N06-14L
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
a
a
a
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge
Gate-Drain Charge
c
c
c
Gate Resistance R
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
Fall Time
c
c
c
Source-Drain Diode Ratings and Characteristics
Pulsed Current
a
Forward Voltage V
DS
GS(th)
V
GSS
DSS
I
V
D(on)
R
DS(on)
g
fs
iss
- 305 385
oss
- 180 225
rss
Qg
Qgs -69
Qgd -8.513
g
t
d(on)
t
r
t
-2233
d(off)
tf -914
b
I
SM
SD
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
VGS = 0 V VDS = 60 V - - 1
V
V
V
V
V
V
V
VGS = 0, ID = 250 μA 60 - -
VDS = VGS, ID = 250 μA 1.5 2.0 2.5
= 0 V, VGS = ± 20 V - - ± 100 nA
DS
= 0 V VDS = 60 V, TJ = 125 °C - - 50
GS
= 0 V VDS = 60 V, TJ = 175 °C - - 250
GS
= 10 V VDS ≥ 5 V 30 - - A
GS
= 10 V ID = 20 A - 0.011 0.014
GS
= 10 V ID = 20 A, TJ = 125 °C - - 0.024
GS
= 10 V ID = 20 A, TJ = 175 °C - - 0.029
GS
= 4.5 V ID = 20 A, TJ = 25 °C - 0.014 0.017
GS
VDS = 15 V, ID = 20 A - 52 - S
= 0 V VDS = 25 V, f = 1 MHz
GS
= 10 V VDS = 30 V, ID = 40 A
GS
f = 1 MHz 0.8 1.7 3.7 Ω
= 30 V, RL = 0.75 Ω
V
DD
I
≅ 40 A, V
D
= 10 V, Rg = 1 Ω
GEN
IF = 20 A, V
= 0 - 0.85 1.2 V
GS
Vishay Siliconix
- 1685 2105
-3451
-812
-1320
--160A
V
μA V
Ω
pF Output Capacitance C
nC Gate-Source Charge
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S15-1873-Rev. C, 10-Aug-15
2
Document Number: 67002
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 3
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0
20
40
60
80
100
03691215
VGS=10Vthru5V
VGS=4V
VGS=3V
VDS - Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
20
40
60
80
100
012345
TC= - 55 °C
TC= 125 °C
TC= 25 °C
VGS - Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.01
0.02
0.03
0.04
0.05
0 1224364860
VGS=10V
VGS=4.5V
R
DS(on)
- On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0 5 10 15 20 25 30 35
ID=40A
VDS=30V
Qg - Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQD40N06-14L
Vishay Siliconix
Output Characteristics
80
64
48
32
- Transconductance (S)
fs
g
16
0
TC= - 55 °C
TC= 25 °C
TC= 125 °C
0 8 16 24 32 40
ID- Drain Current (A)
Transconductance
2500
2000
C
iss
Transfer Characteristics
On-Resistance vs. Drain Current
1500
1000
C - Capacitance (pF)
500
0
0 102030405060
S15-1873-Rev. C, 10-Aug-15
C
oss
C
rss
VDS - Drain-to-Source Voltage (V)
Capacitance
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Gate Charge
3
For technical questions, contact: [email protected]
Document Number: 67002
Page 4
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0.5
-50 -25 0 25 50 75 100 125 150 175
0.8
1.1
1.4
1.7
2.0
2.3
ID=20A
VGS=10V
TJ - Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance
0
0.02
0.04
0.06
0.08
0.10
0246810
TJ= 25 °C
TJ= 150 °C
R
DS(on)
- On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
-1.5
-50 -25 0 25 50 75 100 125 150 175
-1.1
-0.7
-0.3
0.1
0.5
ID=5mA
ID= 250 μA
V
GS(th)
Variance (V)
TJ - Temperature (°C)
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
10
1
0.1
- Source Current (A)
S
I
0.01
0.001 0 0.2 0.4 0.6 0.8 1.0 1.2
SQD40N06-14L
Vishay Siliconix
TJ= 150 °C
TJ= 25 °C
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
75
ID=10mA
)
72
Source Drain Diode Forward Voltage
Threshold Voltage
S15-1873-Rev. C, 10-Aug-15
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
oltage (V
69
66
- Drain-to-Source V
DS
63
V
60
-50 -25 25 50 75 100 125 150 1750 TJ- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
4
For technical questions, contact: [email protected]
Document Number: 67002
Page 5
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Square Wave Pulse Duration (s)
2
1
0.1
0.01 10
-4
10
-3
10
-2
10
-1
10
Normalized Effective Transient
Thermal Impedance
1000
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1001
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SQD40N06-14L
Vishay Siliconix
100
10
1
Drain Current (A)I
-
D
0.1
0.01
0.01 0.1 1 10 100
* V
IDM Limited
Limited by
R
DS(on)*
TC = 25 °C Single Pulse
VDS- Drain-to-Source Voltage (V)
minimum VGS at which R
GS
ID Limited
BVDSS Limited
is specified
DS(on)
Safe Operating Area
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
S15-1873-Rev. C, 10-Aug-15
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 67002
Page 6
SQD40N06-14L
Square Wave Pulse Duration (s)
2
1
0.1
0.01 10
-4
10
-3
10
-2
10110
-1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67002
S15-1873-Rev. C, 10-Aug-15
.
6
Document Number: 67002
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 7
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SQD40N06-14L
Vishay Siliconix
REVISION HISTORY
REVISION DATE DESCRIPTION OF CHANGE
C 04-Aug-15 • Revised R
Note
a. As of April 2014
a
minimum limit
g
S15-1873-Rev. C, 10-Aug-15
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
7
Document Number: 67002
Page 8
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Package Information
Vishay Siliconix
TO-252AA Case Outline
E
b3
L3
A
C2
DIM. MIN. MAX. MIN. MAX.
MILLIMETERS INCHES
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
D
H
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
L4
L5
L
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
b
e1
b2
e
C
A1
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
gage plane height (0.5 mm)
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
D1
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
ECN: T13-0592-Rev. A, 02-Sep-13
E1
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
1
Document Number: 64424
For technical questions, contact: [email protected]
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 9
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
Application Note 826
Vishay Siliconix
0.243 (6.180)
Return to Index
Return to Index
0.420 (10.668)
0.180
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.087
0.090
0.055
(1.397)
(2.202)
(2.286)
APPLICATION NOTE
Document Number: 72594 www.vishay.com Revision: 21-Jan-08 3
Page 10
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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