Datasheet SQD40N06-14L Specification

SQD40N06-14L

TO-252

Top View

TO

G

D

S

Drain connected to tab

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Vishay Siliconix

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

VDS (V) 60

R

(Ω) at VGS = 10 V 0.014

DS(on)

R

(Ω) at VGS = 4.5 V 0.017

DS(on)

I

(A) 40

D

Configuration Single

Package TO-252

FEATURES

• TrenchFET® power MOSFET

• Package with low thermal resistance

• 100 % R

• AEC-Q101 qualified

• Material categorization:
for definitions of compliance please see

www.vishay.com/doc?99912

and UIS tested

g

d

G

N-Channel MOSFET

D

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current

Continuous Source Current (Diode Conduction)

Pulsed Drain Current

b

Single Pulse Avalanche Current

Single Pulse Avalanche Energy E

Maximum Power Dissipation

b

C

T

= 125 °C 29

C

a

L = 0.1 mH

TC = 25 °C

= 125 °C 25

T

C

a

Operating Junction and Storage Temperature Range T

DS

± 20

GS

I

D

I

S

IDM 160

I

AS

AS

P

D

, T

J

stg

60

V

40

40

A

32

51 mJ

75

W

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

Junction-to-Case (Drain) R

Notes

a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.

S15-1873-Rev. C, 10-Aug-15

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

c

1

R

thJA

thJC

60

2

Document Number: 67002

°C/W

SQD40N06-14L

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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge

Gate-Drain Charge

c

c

c

Gate Resistance R

Turn-On Delay Time

Rise Time

c

Turn-Off Delay Time

Fall Time

c

c

c

Source-Drain Diode Ratings and Characteristics

Pulsed Current

a

Forward Voltage V

DS

GS(th)

V

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

- 305 385

oss

- 180 225

rss

Qg

Qgs -69

Qgd -8.513

g

t

d(on)

t

r

t

-2233

d(off)

tf -914

b

I

SM

SD

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

VGS = 0 V VDS = 60 V - - 1

V

V

V

V

V

V

V

VGS = 0, ID = 250 μA 60 - -

VDS = VGS, ID = 250 μA 1.5 2.0 2.5

= 0 V, VGS = ± 20 V - - ± 100 nA

DS

= 0 V VDS = 60 V, TJ = 125 °C - - 50

GS

= 0 V VDS = 60 V, TJ = 175 °C - - 250

GS

= 10 V VDS ≥ 5 V 30 - - A

GS

= 10 V ID = 20 A - 0.011 0.014

GS

= 10 V ID = 20 A, TJ = 125 °C - - 0.024

GS

= 10 V ID = 20 A, TJ = 175 °C - - 0.029

GS

= 4.5 V ID = 20 A, TJ = 25 °C - 0.014 0.017

GS

VDS = 15 V, ID = 20 A - 52 - S

= 0 V VDS = 25 V, f = 1 MHz

GS

= 10 V VDS = 30 V, ID = 40 A

GS

f = 1 MHz 0.8 1.7 3.7 Ω

= 30 V, RL = 0.75 Ω

V

DD

I

≅ 40 A, V

D

= 10 V, Rg = 1 Ω

GEN

IF = 20 A, V

= 0 - 0.85 1.2 V

GS

Vishay Siliconix

- 1685 2105

-3451

-812

-1320

--160A

V

μA V

Ω

pF Output Capacitance C

nC Gate-Source Charge

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S15-1873-Rev. C, 10-Aug-15

2

Document Number: 67002

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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0

20

40

60

80

100

03691215

VGS=10Vthru5V

VGS=4V

VGS=3V

VDS - Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

0

20

40

60

80

100

012345

TC= - 55 °C

TC= 125 °C

TC= 25 °C

VGS - Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

0

0.01

0.02

0.03

0.04

0.05

0 1224364860

VGS=10V

VGS=4.5V

R

DS(on)

- On-Resistance (Ω)

ID - Drain Current (A)

0

2

4

6

8

10

0 5 10 15 20 25 30 35

ID=40A

VDS=30V

Qg - Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

SQD40N06-14L

Vishay Siliconix

Output Characteristics

80

64

48

32

- Transconductance (S)

fs

g

16

0

TC= - 55 °C

TC= 25 °C

TC= 125 °C

0 8 16 24 32 40

ID- Drain Current (A)

Transconductance

2500

2000

C

iss

Transfer Characteristics

On-Resistance vs. Drain Current

1500

1000

C - Capacitance (pF)

500

0

0 102030405060

S15-1873-Rev. C, 10-Aug-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Gate Charge

3

For technical questions, contact: [e-mail]

Document Number: 67002

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0.5

-50 -25 0 25 50 75 100 125 150 175

0.8

1.1

1.4

1.7

2.0

2.3

ID=20A

VGS=10V

TJ - Junction Temperature (°C)

(Normalized)

R

DS(on)

- On-Resistance

0

0.02

0.04

0.06

0.08

0.10

0246810

TJ= 25 °C

TJ= 150 °C

R

DS(on)

- On-Resistance (Ω)

VGS - Gate-to-Source Voltage (V)

-1.5

-50 -25 0 25 50 75 100 125 150 175

-1.1

-0.7

-0.3

0.1

0.5

ID=5mA

ID= 250 μA

V

GS(th)

Variance (V)

TJ - Temperature (°C)

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

100

10

1

0.1

- Source Current (A)

S

I

0.01

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2

SQD40N06-14L

Vishay Siliconix

TJ= 150 °C

TJ= 25 °C

VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

75

ID=10mA

)

72

Source Drain Diode Forward Voltage

Threshold Voltage

S15-1873-Rev. C, 10-Aug-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

oltage (V

69

66

- Drain-to-Source V

DS

63

V

60

-50 -25 25 50 75 100 125 150 1750
TJ- Junction Temperature (°C)

Drain Source Breakdown vs. Junction Temperature

4

For technical questions, contact: [e-mail]

Document Number: 67002

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Square Wave Pulse Duration (s)

2

1

0.1

0.01
10

-4

10

-3

10

-2

10

-1

10

Normalized Effective Transient

Thermal Impedance

1000

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1001

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

SQD40N06-14L

Vishay Siliconix

100

10

1

Drain Current (A)I

-

D

0.1

0.01

0.01 0.1 1 10 100

* V

IDM Limited

Limited by

R

DS(on)*

TC = 25 °C
Single Pulse

VDS- Drain-to-Source Voltage (V)

minimum VGS at which R

GS

ID Limited

BVDSS Limited

is specified

DS(on)

Safe Operating Area

100 µs

1 ms

10 ms

100 ms, 1 s, 10 s, DC

S15-1873-Rev. C, 10-Aug-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Normalized Thermal Transient Impedance, Junction-to-Ambient

5

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 67002

SQD40N06-14L

Square Wave Pulse Duration (s)

2

1

0.1

0.01
10

-4

10

-3

10

-2

10110

-1

Normalized Effective Transient

Thermal Impedance

0.2

0.1

Duty Cycle = 0.5

30

0.05

0.02

Single Pulse

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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Case

Note

• The characteristics shown in the two graphs

- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)

- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67002

S15-1873-Rev. C, 10-Aug-15

.

6

Document Number: 67002

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

SQD40N06-14L

Vishay Siliconix

REVISION HISTORY

REVISION DATE DESCRIPTION OF CHANGE

C 04-Aug-15 • Revised R

Note

a. As of April 2014

a

minimum limit

g

S15-1873-Rev. C, 10-Aug-15

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 67002

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Package Information

Vishay Siliconix

TO-252AA Case Outline

E

b3

L3

A

C2

DIM. MIN. MAX. MIN. MAX.

MILLIMETERS INCHES

A 2.18 2.38 0.086 0.094

A1 - 0.127 - 0.005

b 0.64 0.88 0.025 0.035

D

H

b2 0.76 1.14 0.030 0.045

b3 4.95 5.46 0.195 0.215

C 0.46 0.61 0.018 0.024

C2 0.46 0.89 0.018 0.035

L4

L5

L

D 5.97 6.22 0.235 0.245

D1 4.10 - 0.161 -

E 6.35 6.73 0.250 0.265

b

e1

b2

e

C

A1

E1 4.32 - 0.170 -

H 9.40 10.41 0.370 0.410

e 2.28 BSC 0.090 BSC

e1 4.56 BSC 0.180 BSC

gage plane height (0.5 mm)

L 1.40 1.78 0.055 0.070

L3 0.89 1.27 0.035 0.050

D1

L4 - 1.02 - 0.040

L5 1.01 1.52 0.040 0.060

ECN: T13-0592-Rev. A, 02-Sep-13

E1

DWG: 6019

Note

• Dimension L3 is for reference only.

Revision: 02-Sep-13

1

Document Number: 64424

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

Application Note 826

Vishay Siliconix

0.243
(6.180)

Return to Index

Return to Index

0.420
(10.668)

0.180

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.087

0.090

0.055

(1.397)

(2.202)

(2.286)

APPLICATION NOTE

Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3

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Revision: 08-Feb-17

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Document Number: 91000

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