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polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
Total
Device
Dissipation
190
TM
t
ABSOLUTE MAXIMUM RATINGS ( T =
Junction to
Case Thermal
Resistance
o
Watts V
0.85
C/W
Maximum
Junction
Temperature
SQ742
SILICON GATE ENHANCEMENT MODE
RF POWER TRANSISTORVDMOS
Watts
90.0
Package Style
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
25 C )
Storage
Temperature
o
-65 C to 150 C200 C A V
DC Drain
Current
oo
7.5
Drain to
Gate
Voltage
125 V
Push - Pull
AQ
Drain to
Source
Voltage
125
Gate to
Source
Voltage
20
Gps
η
Bvdss
Idss
Igss
Vgs
Idsat
Ciss
Crss
Coss
RF CHARACTERISTICS (
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Load Mismatch ToleranceVSWR
11
50
90.0
WATTS OUTPUT )
dB
%
20:1 Relative
0.60
Idq = A, Vds = V, F =
Idq =
0.60
A, Vds = V, F =
Idq = 0.60
A, Vds = V, F =
50.0
50.0
50.0
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward TransconductancegM Vds = 10V, Vgs = 5V
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
125
2.0
1
1 7
1.6
1.50
7.00
96.0
0.4
34.0
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
20.00Ids = mA, Vgs = 0V
Vds =
Vds = 0V Vgs = 30V
Vgs = 20V, Ids = Rdson Saturation Resistance
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
50.0
0.10
V, Vgs = 0V
A, Vgs = VdsIds =
2.00
Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0
Vgs = 0V, F = 1 MHz50.0
MHz
400
400
MHz
400
MHz
A
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
REVISION 03/08/2001
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Id in amps; Gm in mhos
SQ742
POUT VS PIN GRAPH
SQ742 F=400MHZ, VDS=50V, Idq=.6A
110
100
90
80
70
60
50
40
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
Efficiency = 50%
PIN IN WATTS
S1E 2 DIE IV
8
7
6
5
4
ID IN AMPS
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v
VDS IN VOLTS
Pout
Gain
CAPACITANCE VS VOLTAGE
18
17
16
15
14
13
12
11
10
1000
100
10
1
0.1
0 5 10 15 20 25 30 35 40 45 50
S1E 2 DIE CAPACITANCE
Ciss
Coss
Crss
VDS IN VOLTS
ID & GM VS VGSIV CURVE
10.00
1.00
0.10
0.01
0 2 4 6 8 10 12 14 16 18
S1E 2 DIE ID & GM Vs VG
Id
gM
Vgs in Volts
S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
REVISION 03/08/2001
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