Datasheet SPP3403 Datasheet (SYNC Power)

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SPP3403

P-Channel Enhancement Mode MOSFET

DESCRIPTION APPLICATIONS

z Power Management in Note book

The SPP3403 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface

mount package.

z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter

FEATURES

 -30V/-2.8A,RDS(ON)=100mΩ@VGS=- 10V
 -30V/-2.5A,RDS(ON)=110mΩ@VGS=-4.5V
 -30V/-1.5A,RDS(ON)=145mΩ@VGS=-2.5V
 -30V/-1.0A,RDS(ON)=200mΩ@VGS=-1.8V
 Super high density cell design for extremely low

RDS (ON)

 Exceptional on-resistance and maximum DC

current capability

 SOT-23-3L package design

PIN CONFIGURATION ( SOT-23-3L )

PART MARKING

2006/05/26 Ver.4 Page 1

SPP3403

P-Channel Enhancement Mode MOSFET

PIN DESCRIPTION

Pin Symbol Description

1 G Gate

2 S Source

3 D

ORDERING INFORMATION

Part Number Package Part Marking

SPP3403S23RG SOT-23-3L A3YW

※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP3403S23RG : Tape Reel ; Pb – Free

ABSOULTE MAXIMUM RATINGS

(T

A=25 Unless otherwise noted)℃

Drain

Parameter Symbol Typical Unit

Drain-Source Voltage VDSS

Gate –Source Voltage VGSS

Continuous Drain Current(TJ=150 )℃

Pulsed Drain Current IDM

Continuous Source Current(Diode Conduction) IS

Power Dissipation

Operating Junction Temperature TJ

Storage Temperature Range TSTG

Thermal Resistance-Junction to Ambient RθJA

TA=25℃

T

A=70℃

TA=25℃

A=70℃

T

ID

PD

-30 V

±12 V

-3.5

-2.8

-20 A

-1.4 A

1.25

0..81

-55/150

-55/150
105

A

W

℃
℃

℃/W

2006/05/26 Ver.4 Page 2

SPP3403

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(T

A=25 Unless otherwise noted)℃

Parameter Symbol Conditions Min. Typ Max. Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30

Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.4 -1.0

Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA

VDS=-24V,VGS=0V -1

Zero Gate Voltage Drain Current IDSS

On-State Drain Current ID(on) VDS= -5V,VGS =-4.5V -4 A

Drain-Source On-Resistance RDS(on)

Forward Transconductance gfs VDS=-10V,ID=-2.8A 4 S

Diode Forward Voltage VSD IS=-1.2A,VGS =0V -0.8 -1.2 V

Dynamic

Total Gate Charge Qg 5.8

Gate-Source Charge Qgs 0.8

Gate-Drain Charge Qgd

Input Capacitance Ciss 380

Output Capacitance Coss 55

Reverse Transfer Capacitance Crss

V

DS=-24V,VGS=0V

T

J=85℃

VGS=-10V,ID=-2.8A 0.080 0.100
VGS=-4.5V,ID=-2.5A 0.100 0.110
VGS=-2.5V,ID=-1.5A 0.130 0.145
VGS=-1.8V,ID=-1.0A 0.160 0.200

DS=-15V ,VGS=-4.5V

V
I

D≡-2.0A

V

DS=-15V ,VGS=0V

f=1MHz

-5

1.5

40

V

uA

Ω

nC

pF

Turn-On Time

Turn-Off Time

td(on) 6

V

r 3.9

t

td(off) 40

t

f

DD=-15V ,RL=15Ω

D≡-1.0A ,VGEN=-10V

I
R

G=3Ω

ns

15

2006/05/26 Ver.4 Page 3

SPP3403

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2006/05/26 Ver.4 Page 4

SPP3403

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2006/05/26 Ver.4 Page 5

SPP3403

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2006/05/26 Ver.4 Page 6

SPP3403

P-Channel Enhancement Mode MOSFET

SOT-23-3L PACKAGE OUTLINE

2006/05/26 Ver.4 Page 7

SPP3403

P-Channel Enhancement Mode MOSFET

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.

©The SYNC Power logo is a registered trademark of SYNC Power Corporation

©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved

SYNC Power Corporation

9F-5, No.3-2, Park Street

NanKang District (NKSP), Taipei, Taiwan 115

Phone: [phone]

Fax: [phone]

©http://www.syncpower.com

2006/05/26 Ver.4 Page 8