Datasheet SPP3401B Datasheet (SYNC Power)

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SPP3401B

P-Channel Enhancement Mode MOSFET

DESCRIPTION APPLICATIONS

z Power Management in Note book

The SPP3401B is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES PIN CONFIGURATION(SOT-23-3L)

 -30V/-4.0A,RDS(ON)= 70mΩ@VGS=- 10V
 -30V/-3.2A,RDS(ON)= 90mΩ@VGS=-4.5V
 -30V/-1.2A,RDS(ON)= 115mΩ@VGS=-2.5V
 Super high density cell design for extremely low

DS (ON)

R

 Exceptional on-resistance and maximum DC

current capability

 SOT-23-3L package design

z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter

PART MARKING

2009 / 01 / 05 Ver.1 Page 1

SPP3401B

P-Channel Enhancement Mode MOSFET

PIN DESCRIPTION

Pin Symbol Description

1 G Gate

2 S Source

3 D Drain

ORDERING INFORMATION

Part Number Package Part Marking

SPP3401BS23RGB SOT-23-3L A1YW

※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPP3401BS23RGB : Tape Reel ; Pb – Free; Halogen – Free

ABSOULTE MAXIMUM RATINGS

(T

A=25 Unless otherwise℃ noted)

Parameter Symbol Typical Unit

Drain-Source Voltage VDSS -30 V

Gate –Source Voltage VGSS ±12 V

Continuous Drain Current(TJ=150 )℃

Pulsed Drain Current IDM -15 A

Continuous Source Current(Diode Conduction) IS -1.0 A

Power Dissipation

Operating Junction Temperature TJ 150 ℃

Storage Temperature Range TSTG -55/150 ℃

Thermal Resistance-Junction to Ambient RθJA 120 /W℃

TA=25℃ -4.0

T

A=70℃

TA=25℃ 1.25

A=70℃

T

D

I

P

D

-3.2

0.8

A

W

2009 / 01 / 05 Ver.1 Page 2

SPP3401B

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(T

A=25 Unl℃ ess otherwise noted)

Parameter Symbol Conditions Min. Typ Max. Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30

Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.4 -1.0

Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA

VDS=-24V,VGS=0V -1

Zero Gate Voltage Drain Current IDSS

On-State Drain Current ID(on)

Drain-Source On-Resistance RDS(on)

Forward Transconductance gfs VDS=-5.0V,ID=-4.0A 10 S

Diode Forward Voltage VSD IS=-1.0A,VGS=0V -0.8 -1.2 V

Dynamic

Total Gate Charge Qg 10 18

Gate-Source Charge Qgs 1.6

Gate-Drain Charge Qgd

Input Capacitance Ciss 450

Output Capacitance Coss 95

Reverse Transfer Capacitance Crss

V

DS=-24V,VGS=0V

T

J=55℃

DS≦-5V,VGS=-10V

V

VGS=- 10V,ID=-4.0A 0.062 0.070
VGS=-4.5V,ID=-3.2A 0.080 0.090
VGS=-2.5V,ID=-1.2A 0.107 0.115

DS=-15V,VGS=-10V

V
I

D≡-4.0A

V

DS=-15V,VGS=0V

f=1MHz

-10

-10 A

3.0

55

V

uA

Ω

nC

pF

Turn-On Time

Turn-Off Time

2009 / 01 / 05 Ver.1 Page 3

td(on) 8 18

V

r 8 18

t

td(off) 25 50

f

t

DD=-15V,RL=15Ω

I

D≡-1.0A,VGEN=-10V

R

G=6Ω

25 35

ns

SPP3401B

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2009 / 01 / 05 Ver.1 Page 4

SPP3401B

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2009 / 01 / 05 Ver.1 Page 5

SPP3401B

P-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2009 / 01 / 05 Ver.1 Page 6

SPP3401B

P-Channel Enhancement Mode MOSFET

SOT-23-3L PACKAGE OUTLINE

2009 / 01 / 05 Ver.1 Page 7

SPP3401B

P-Channel Enhancement Mode MOSFET

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.

©The SYNC Power logo is a registered trademark of SYNC Power Corporation

©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved

SYNC Power Corporation

9F-5, No.3-2, Park Street

NanKang District (NKSP), Taipei, Taiwan 115

Phone: [phone]

Fax: [phone]

©http://www.syncpower.com

2009 / 01 / 05 Ver.1 Page 8