Datasheet SPP24N60CFD Datasheet (INFINEON)

SPP24N60CFD

CoolMOSTM Power Transistor

Features

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

• Extreme dv /dt rated

• High peak current capability

• Qualified according to JEDEC

• CoolMOS CFD designed for

• Softswitching PWM Stages

• LCD & CRT TV

Type Package Marking

Type Package Marking

SPP24N60CFD TO-220 24N60CFD

SPP24N60CFD PG-TO220 24N60CFD

Maximum ratings, at T

1)

for target applications

=25 °C, unless otherwise specified

j

Product Summary

V

@ Tjmax 650 V

DS

R

DS(on),max

I

D

PG-TO220

0.185

21.7 A

Ω

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

2)

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

2),3)

2),3)

I

D

I

D,pulse

E

AS

E

AR

I

AR

Drain source voltage slope dv /dt

Reverse diode dv /dt dv /dt V/ns

Maximum diode commutation speed di /dt A/µs

Gate source voltage

V

GS

TC=25 °C

T

=100 °C

C

TC=25 °C

ID=10A, VDD=50 V

ID=20A, VDD=50 V

=21.7A, VDS=480V,

I

D

T

=125°C

j

=21.7A, VDS=480 V,

I

S

T

=125°C

j

static V

AC (f >1 Hz)

Power dissipation

Operating and storage temperature

P

tot

, T

T

j

TC=25 °C

stg

Value

21.7

13.7

55

780 mJ

1

20

80

40

600

±20

±30

240

-55 ... 150

A

A

V/ns

W

°C

Mounting torque M3 & M3.5 screws 60 Ncm

Rev. 1.2 page 1 2007-08-28

SPP24N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ­ambient

Soldering temperature, wave
soldering only allowed at leads

Electrical characteristics, at T

R

thJC

R

thJA

T

sold

=25 °C, unless otherwise specified

j

leaded - - 62

1.6 mm (0.063 in.)
from case for 10 s

- - 0.52 K/W

- - 260 °C

Static characteristics

Drain-source breakdown voltage

Avalanche breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

=0 V, ID=250 µA

=0 V, ID=21.7 A

VDS=VGS, ID=1.2 mA

600 - - V

- 700 -

345

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

I

I

R

R

g

DSS

GSS

DS(on)

G

fs

VDS=600 V, VGS=0 V,
T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=15.4 A,
T

=25 °C

j

V

=10 V, ID=15.4 A,

GS

T

=150 °C

j

- 2.5 - µA

- 2600 -

- - 100 nA

- 0.15 0.185

- 0.42 -

f =1 MHz, open drain - 0.8 -

|VDS|>2|ID|R

I

=15.4 A

D

DS(on)max

,

- 14.0 - S

Ω

Rev. 1.2 page 2 2007-08-28

SPP24N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Effective output capacitance, energy

4)

related

Effective output capacitance, time

5)

related

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

C

C

t

t

t

t

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f =1 MHz

=0 V, VDS=0 V

V

GS

to 480 V

V

=400 V,

DD

V

=10 V, ID= 21.7A,

GS

=6.8 Ω

R

G

- 3160 - pF

- 900 -

-34-

- 103 -

- 188 -

-50-ns

-24-

- 100 -

-9-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

1)

J-STD20 and JESD22

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

4)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

5)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

j,max

Q

Q

Q

V

gs

gd

g

plateau

=480 V,

V

DD

I

=21.7 A,

D

V

=0 to 10 V

GS

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

-15-nC

-67-

- 110 143

- 7.3 - V

DSS.

DSS.

Rev. 1.2 page 3 2007-08-28

SPP24N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

I

S

I

S,pulse

V

SD

t

rr

Q

I

rrm

=25 °C

T

C

--55

- - 21.7 A

VGS=0 V, IF=IS,
T

=25 °C

j

- 1.0 1.2 V

- 140 - ns

V

=480 V, IF=IS,

rr

R

di

/dt =100 A/µs

F

- 0.9 - µC

-11-A

Rev. 1.2 page 4 2007-08-28

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D =0

tot

parameter: t

250

10

2

p

limited by on-state
resistance

SPP24N60CFD

1 µs

200

1

10

150

[W]

tot

P

[A]

D

I

100

0

10

50

-1

0

0 40 80 120 160

TC [°C]

10

10

0

10

1

VDS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

I

=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C

D

parameter: D=t

0

10

/T parameter: V

p

50

45

GS

20 V

10 V

10 µs

100 µs

1 ms

DC

10 ms

10

2

10

3

40

0.5

8 V

35

30

25

[A]

D

I

20

15

7 V

6.5 V

10

6 V

5

0

5.5 V

5 V

0 5 10 15 20

VDS [V]

[K/W]

10

thJC

Z

10

-1

-2

10

0.1

0.05

0.02

0.01

single pulse

-5

0.2

10

-4

10

-3

10

-2

10

-1

tp [s]

Rev. 1.2 page 5 2007-08-28

SPP24N60CFD

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

=f(VDS); Tj=150 °C R

D

parameter: V

GS

=f(ID); Tj=150 °C

DS(on)

parameter: V

GS

35

30

20 V

10 V

8 V

1.2

1

25

[A]

D

I

20

15

10

7 V

6.5 V

6 V

5.5 V

]

Ω

[

R

DS(on)

0.8

0.6

0.4

5 V

5.5 V

6 V

5

5 V

0

0 5 10 15 20

VDS [V]

0.2

0 5 10 15 20 25

ID [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=15.4 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

j

DS(on)max

6.5 V

7 V

10 V

20 V

0.6

80

25 °C

0.5

60

0.4

]

Ω

[

R

DS(on)

0.3

98 %

[A]

D

I

40

150 °C

0.2

typ

20

0.1

0

-60 -20 20 60 100 140 180

Tj [°C]

0

0 2 4 6 8 10 12 14

VGS [V]

Rev. 1.2 page 6 2007-08-28

SPP24N60CFD

9 Typ. gate charge 10 Forward characteristics of reverse diode

V

=f(Q

GS

parameter: V

); ID=21.7 A pulsed IF=f(VSD)

gate

DD

10

120 V

parameter: T

2

10

j

[V]

GS

V

8

6

480 V

[A]

F

I

10

1

150 °C

4

0

10

2

-1

0

0 25 50 75 100 125

Q

[nC]

gate

10

0 0.5 1 1.5 2

11 Avalanche SOA 12 Avalanche energy

I

=f(tAR) EAS=f(Tj); ID=10 A; VDD=50 V

AR

parameter: T

20

j(start)

800

150 °C, 98%

25 °C

25 °C, 98%

VSD [V]

700

16

600

500

400

[mJ]

AS

E

300

[A]

AV

I

12

125 °C

25 °C

8

200

4

100

0

10

-3

10

10

10

10

10

10

10

4

3

2

1

0

-1

-2

tAR [µs]

0

25 50 75 100 125 150 175 200

Tj [°C]

Rev. 1.2 page 7 2007-08-28

13 Drain-source breakdown voltage 14 Typ. capacitances

SPP24N60CFD

V

BR(DSS)

=f(Tj); ID=10 mA C =f(VDS); VGS=0 V; f =1 MHz

700

660

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

Tj [°C]

4

10

3

10

2

10

C [pF]

1

10

0

10

0 100 200 300 400 500

Ciss

Coss

Crss

VDS [V]

15 Typ. C

E

= f(VDS)Q

oss

[µJ]

oss

E

stored energy 16 Typ. reverse recovery charge

oss

=f(Tj);parameter: ID =21.7 A

rr

18

15

12

9

6

3

0

0 100 200 300 400 500 600

1.2

1.1

1

[µC]

rr

Q

0.9

0.8

25 50 75 100 125

VDS [V]

Tj [°C]

Rev. 1.2 page 8 2007-08-28

17 Typ. reverse recovery charge 18 Typ. reverse recovery charge

Q

=f(IS); parameter: di/ dt =100 A/µs Qrr=f(di /dt ); parameter: ID=21.7 A

rr

SPP24N60CFD

1.2

1

125 °C

0.8

[µC]

rr

Q

0.6

0.4

5 9 13 17 21

25 °C

IS [A]

2.4

2

1.6

[µC]

rr

Q

1.2

0.8

100 200 300 400 500 600

125 °C

25 °C

d i/d t [A/µs]

Rev. 1.2 page 9 2007-08-28

Definition of diode switching characteristics

SPP24N60CFD

Rev. 1.2 page 10 2007-08-28

PG-TO-220-3-1; -3-21

SPP24N60CFD

Dimension in mm/ inches

Rev. 1.2 page 11 2007-08-28

SPP24N60CFD

A

s

(

s

.

s

o

r

e

.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.

ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologie
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party

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Rev. 1.2 page 12 2007-08-28