Datasheet SPP18P06PH Datasheet

SPP18P06PH

SIPMOS

®

Small-Signal-Transistor

Product Summary

Features

• P-Channel

• Enhancement mode

V

DS

R

DS(on),max

I

D

-60 V

0.13

-18.7 A

• Avalanche rated

• dv/dt rated

• 175°C operating temperature

PG-TO220-3-1

• Pb-free lead finishing; RoHS compliant

• Halogen-free according to IEC61249-2-21

• Qualified according to AEC Q101

Type Package Tape and reel information Marking Lead free

SPP18P06PH

Maximum ratings, at T

PG-TO220-3

=25 °C, unless otherwise specified

j

50pcs/tube 18P06P

Yes



Parameter Symbol Conditions Unit

Value

steady state

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by
T

jmax

I

D

I

D,pulse

E

AS

E

AR

Reverse diode dv/dt dv/dt

Gate source voltage
Power dissipation

Operating and storage temperature

V

GS

P

tot

T

, T

j

ESD class

TA=25 °C
T

=100 °C

A

TA=25 °C

ID=18.7 A, RGS=25 

=18.7 A, VDS=48 V,

I

D

di/dt=-200 A/µs,

T

=175 °C

j,max

TA=25 °C

stg

1)

-18.7

-13.2

-74.8

151

8

-6

±20

81.1

"-55 ... +175"

Class 1C( >1000V <2000V)

A

mJ

kV/µs

V
W

°C

Soldering temperature
IEC climatic category; DIN IEC 68-1

260 °C

55/150/56

Rev1.92 page 1 2014-11-21

SPP18P06P H

.

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - case

Thermal resistance,
junction - ambient, leaded

SMD version, device on PCB:

Electrical characteristics, at T

R

thJC

R

thJA

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 62 K/W

2

cooling area

6 cm

- - 1.85 K/W

--62

1)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Transconductance

1)

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical without blown air

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)VGS

g

fs

=0 V, ID=-250 µA

VDS=VGS, ID=-

1000 µA

VDS=-60 V, VGS=0 V,

=25 °C

T

j

=-60 V, VGS=0 V,

V

DS

=150 °C

T

j

VGS=-20 V, VDS=0 V

=-10 V, ID=-13.2 A

|VDS|>2|ID|R

=-13.2 A

I

D

DS(on)max

-60 - - V

-2.1 2.7 -4

- -0.1 -1 µA

- -10 -100

- -10 -100 nA

- 102 130

,

510-S

mΩ

Rev1.92 page 2 2014-11-21

SPP18P06P H

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

=0 V, VDS=-25 V,

V

GS

f =1 MHz

V

=-30 V, VGS=-

DD

=2.7 Ω

G

=-13.2 A,

D

10 V, I

R

- 690 860 pF

- 230 290

- 95 120

- 12.0 18.0 ns

- 5.8 8.7

-2537

- 11 16.5

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=-48 V, ID=-

DD

18.6 A, V

=0 to -10 V

GS

- -4.1 -5.5 nC

- -11 -17

- -21 -28

Gate plateau voltage

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

I

S

I

S,pulse

V

t

rr

Q

plateau

SD

rr

=25 °C

T

A

VGS=0 V, IF=-18.6 A,

=25 °C

T

j

V

=30 V, IF=|IS|,

R

/dt =100 A/µs

di

F

- -5.94 - V

- - 18.60 A

- - -74.8

- -0.99 -1.33 V

- 70 105 ns

- 139 208 nC

Rev1.92 page 3 2014-11-21

1 Power dissipation 2 Drain current

P

=f(TA) ID=f(TA); |VGS|≥10 V

tot

SPP18P06P H

90

20

80

70

15

60

50

[W]

tot

40

P

[A]

D

-I

10

30

20

5

10

0

0 40 80 120 160

TA [°C]

0

0 40 80 120 160

TA [°C]

3 Safe operating area 4 Max. transient thermal impedance

Z

=f(VDS); TA=25 °C1); D =0

I

D

parameter: t

[A]

D

-I

10

10

10

1

0

-1

p

limited by on-state
resistance

10 µs

100 µs

1 ms

10 ms

DC

=f(tp)

thJA

parameter: D =tp/T

1

10

0.5

0

10

0.2

[K/W]

thJS

Z

10

-1

10

0.1

0.05

0.02

-5

0.01

10

single pulse

-4

10

-3

10

10

-1

-2

10

0

10

10

2

1

-2

10

0.1 1 10 100

-VDS [V]

tp [s]

Rev1.92 page 4 2014-11-21

5 Typ. output characteristics 6 Typ. drain-source on resistance

I

=f(VDS); Tj=25 °C R

D

parameter: V

GS

40

35

-20 V

-10 V

30

-7 V

25

[A]

20

D

-I

-6 V

15

-5.5 V

=f(ID); Tj=25 °C

DS(on)

parameter: V

400

320

-4 V

-4.5 V

]

Ω

240

[m

DS(on)

R

160

GS

-5 V

-5.5 V

-6 V

SPP18P06P H

-7 V

10

5

0

02468

-5 V

-4.5 V

-4 V

-VDS [V]

80

-20 V

0

0 5 10 15 20 25 30 35

-ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I

=f(VGS); |VDS|>2|ID|R

D

parameter: T

j

8

6

[A]

4

D

-I

DS(on)max

gfs=f(ID); Tj=25 °C

14

12

10

8

[S]

fs

g

6

-10 V

2

125 °C

25 °C

0

012345

-VGS [V]

4

2

0

0 5 10 15 20 25 30

-ID [A]

Rev1.92 page 5 2014-11-21

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=-13.2 A; VGS=-10 V V

DS(on)

350

=f(Tj); VGS=VDS; ID=-1000 µA

GS(th)

4

3.5

SPP18P06P H

300

3

250

]

Ω

200

[m

DS(on)

R

150

100

98 %

typ.

50

0

-60 -20 20 60 100 140 180

Tj [°C]

2.5

[V]

2

GS(th)

-V

1.5

1

0.5

0

-60 -20 20 60 100 140 180

max.

typ.

min.

Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V

); VGS=0 V; f =1 MHz IF=f(VSD)

DS

parameter: T

j

3

10

Ciss

Coss

C [pF]

2

10

1

10

0 5 10 15 20 25

Crss

-VDS [V]

1

10

150 °C, typ

[A]

F

I

0

10

150 °C, 98%

-1

10

0 0.5 1 1.5 2 2.5 3

25 °C, typ

25 °C, 98%

-VSD [V]

Rev1.92 page 6 2014-11-21

13 Avalanche characteristics 14 Typ. gate charge

V

I

=f(tAV); RGS=25 Ω

AS

parameter: T

2

10

j(start)

=f(Q

GS

parameter: V

); ID=-18.6 A pulsed

gate

DD

16

14

12

SPP18P06P H

10

10

1

[A]

AV

-I

0

10

25 °C

100 °C

125 °C

0

10

1

tAV [µs]

10

2

10

3

10

[V]

8

GS

V

6

4

2

0

0 5 10 15 20 25 30

Q

15 Drain-source breakdown voltage 16 Gate charge waveforms

V

=f(Tj); ID=-250 µA

BR(DSS)

70

V

GS

Q

12 V

gate

g

30 V

48 V

[nC]

Rev1.9

65

[V]

60

BR(DSS)

-V

55

50

-60 -20 20 60 100 140 180

V

gs(th)

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

Tj [°C]

page 7 201

2

-

21

-

1

1

4

Rev1.92 page 8 2014-11-21

SPP18P06P H

Package Outline: PG-TO220-3

SPP18P06P H

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.

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For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com

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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
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If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.

).

Rev1.92 page 9 2014-11 21