Datasheet spp15n60cfd_rev1.3 Datasheet

SPP15N60CFD

CoolMOSTMPower Transistor

Features

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

Product Summary

VDS@ Tjmax 650 V R

DS(on),max

I

D

0.330

13.4 A

"

• Ultra low gate charge

• Extreme dv/dt rated

PG-TO220

• High peak current capability

• Qualified for industrial grade applications according to JEDEC

1)

CoolMOS CFD designed for:

• Softswitching PWM Stages

• LCD & CRT TV

Type Package Marking

SPP15N60CFD PG-TO220 15N60CFD

Maximum ratings, at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Unit

Continuous drain current

I

D

TC=25 °C

Value

13.4

A

TC=100 °C

Pulsed drain current

2)

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

2),3)

Drain source voltage slope dv/dt

Reverse diode dv/dt dv/dt V/ns Maximum diode commutation speed di/dt A/µs

Gate source voltage

I

D,pulse

E

AS

E

AR

I

AR

V

GS

TC=25 °C ID=6.7 A, VDD=50 V

ID=13.4 A, VDD=50 V

ID=13.4 A, VDS=480 V, Tj=125 °C

IS=13.4 A, VDS=480 V, Tj=125 °C

static V AC (f>1 Hz)

Power dissipation Operating and storage temperature

P

tot

Tj, T

TC=25 °C

stg

8.4 33

460 mJ

0.8

13.4

80

40

600 ±20

±30 156

-55 ... 150

A

V/ns

W °C

Mounting torque M3 & 3.5 screws 60 Ncm

Rev. 1.3 page 1 2009-11-30

SPP15N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case Thermal resistance, junction -

ambient

Soldering temperature, wave soldering only allowed at leads

R

thJC

R

thJA

T

sold

leaded - - 62

1.6 mm (0.063 in.) from case for 10 s

- - 0.8 K/W

- - 260 °C

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage Avalanche breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

=0 V, ID=250 µA =0 V, ID=13.4 A

VDS=VGS, ID=750 µA

600 - - V

- 700 -

3 4 5

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

I

R

g

DSS

GSS

DS(on)

G

fs

VDS=600 V, VGS=0 V, Tj=25 °C

VDS=600 V, VGS=0 V, Tj=150 °C

VGS=20 V, VDS=0 V

VGS=10 V, ID=9.4 A, Tj=25 °C

VGS=10 V, ID=9.4 A, Tj=150 °C

- 1.4 - µA

- 1200 -

- - 100 nA

- 0.28 0.33

- 0.78 -

f=1 MHz, open drain - 1.3 |VDS|>2|ID|R

ID=9.4 A

DS(on)max

,

- 8 - S

"

Rev. 1.3 page 2 2009-11-30

SPP15N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance Output capacitance

C

iss

C

oss

VGS=0 V, VDS=25 V,

- 1820 - pF

- 520 -

f=1 MHz

Reverse transfer capacitance

Effective output capacitance, energy

4)

5)

Rise time Turn-off delay time Fall time

C

t

t t t

rss

o(er)

o(tr)

d(on)

r

d(off)

f

VGS=0 V, VDS=0 V

to 480 V

VDD=400 V, VGS=10 V, ID=13.4 A, RG=3.6 "

- 21 -

- 61 -

- 110 -

- 43 - ns

- 24 -

- 47 -

- 5 -

Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage

1)

J-STD20 and JESD22

2)

Pulse width tplimited byT

3)

Repetitive avalanche causes additional power losses that can be calculated asPAV=EAR*f.

4)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

5)

C

is a fixed capacitance that gives the same charging time asC

o(tr)

j,max

Q Q Q V

gs

gd

g

plateau

VDD=480 V, ID=13.4 A, VGS=0 to 10 V

- 11 - nC

- 38 -

- 63 84

- 7.3 - V

while VDSis rising from 0 to 80% V

oss

while VDSis rising from 0 to 80% V

oss

DSS.

Rev. 1.3 page 3 2009-11-30

SPP15N60CFD

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current Diode pulse current

2)

Diode forward voltage

Reverse recovery time Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse recovery current

I

S

I

S,pulse

V

SD

t

rr

Q

I

rrm

rr

TC=25 °C

VGS=0 V, IF=IS, Tj=25 °C

VR=480 V, IF=IS,

diF/dt=100 A/µs

dirr/dt Tj=25 °C

- - 13.4 A

- - 33

- 1.0 1.2 V

- 147 - ns

- 1 - µC

- 12 - A

- 1200 - A/µs

Rev. 1.3 page 4 2009-11-30

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D=0

tot

parameter: t

160

140

2

10

p

limited by on-state resistance

SPP15N60CFD

1 µs

120

1

100

[W]

80

tot

P

60

10

[A]

D

I

0

10

40

20

-1

0

0 40 80 120 160

TC[°C]

10

0

10

1

10

VDS[V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C parameter: D=tp/T parameter: V

0

10

0.5

35

30

GS

10 µs

100 µs

10 ms

10

10 V

2

1 ms

3

10

DC

20 V

25

0.2 8 V

20

-5

10

0.1

0.05

0.02

0.01

single pulse

[A]

D

I

15

7 V

10

6.5 V

5

-4

10

-3

10

-2

10

-1

10

tp[s]

0

0 5 10 15 20

VDS[V]

6 V

5.5 V

5 V

-1

[K/W]

10

thJC

Z

-2

10

Rev. 1.3 page 5 2009-11-30

SPP15N60CFD

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=150 °C R parameter: V

[A]

D

I

GS

20

20 V

10 V

15

10

5

0

0 5 10 15 20

VDS[V]

8 V

7 V

6.5 V

6 V

5.5 V

5 V

=f(ID); Tj=150 °C

DS(on)

parameter: V

2

1.8

1.6

1.4

1.2

[ ]

1

DS(on)

R

0.8

0.6

0.4

0.2

0

0 2 4 6 8 10 12

5 V

GS

5.5 V

6 V

ID[A]

6.5 V 7 V

10 V

20 V

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=9.4 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

1

0.8

0.6

[ ]

DS(on)

R

0.4

98 %

typ

0.2

0

-60 -20 20 60 100 140 180

Tj[°C]

parameter: T

50

40

30

[A]

D

I

20

10

0

0 2 4 6 8 10 12

j

DS(on)max

VGS[V]

25 °C

150 °C

Rev. 1.3 page 6 2009-11-30

SPP15N60CFD

9 Typ. gate charge 10 Forward characteristics of reverse diode

VGS=f(Q

gate

parameter: V

10

8

6

[V]

GS

V

4

2

0

0 20 40 60 80

); ID=13.4 A pulsed IF=f(VSD)

DD

120 V

480 V

Q

[nC]

gate

parameter: T

2

10

1

10

[A]

F

I

0

10

-1

10

j

25 °C

150 °C

25 °C, 98%

150 °C, 98%

0 0.5 1 1.5 2

VSD[V]

11 Avalanche SOA 12 Avalanche energy

IAR=f(tAR) EAS=f(Tj); ID=6.7 A; VDD=50 V parameter: T

[A]

AV

I

j(start)

14

12

10

480

420

360

300

8

[mJ]

240

AS

6

125 °C

25 °C

E

180

4

120

2

0

-3

10

4

3

2

1

0

-1

-2

tAR[µs]

60

0

25 75 125 175

Tj[°C]

Rev. 1.3 page 7 2009-11-30

13 Drain-source breakdown voltage 14 Typ. capacitances

SPP15N60CFD

V

BR(DSS)

=f(Tj) C=f(VDS); VGS=0 V; f=1 MHz

700

660

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

Tj[°C]

4

10

3

10

2

10

C [pF]

Crss

1

10

0

10

0 100 200 300 400 500

Ciss

Coss

VDS[V]

15 Typ. C

E

=f(VDS) Qrr=f(Tj);parameter: ID=13.4 A

oss

12

10

[µJ]

oss

E

stored energy 16 Typ. reverse recovery charge

oss

2

1.8

8

1.6

6

4

2

0

0 100 200 300 400 500 600

[µC]

rr

Q

1.4

1.2

1

25 50 75 100 125

VDS[V]

Tj[°C]

Rev. 1.3 page 8 2009-11-30

17 Typ. reverse recovery charge 18 Typ. reverse recovery charge

Qrr=f(IS); parameter: di/dt=100 A/µs Qrr=f(di/dt); parameter: ID=13.4 A

SPP15N60CFD

2

1.8

1.6

1.4

1.2

[µC]

1

rr

Q

0.8

0.6

0.4

0.2

0

3 5 7 9 11 13

25 °C

IS[A]

125 °C

3

2.5

125 °C

2

[µC]

1.5

rr

Q

1

0.5

0

100 200 300 400 500

25 °C

di/dt [A/µs]

Rev. 1.3 page 9 2009-11-30

Definition of diode switching characteristics

SPP15N60CFD

Rev. 1.3 page 10 2009-11-30

PG-TO-220-3--1; -3-21

SPP15N60CFD

Dimensions in mm/ inches

Rev. 1.3 page 11 2009-11-30

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

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on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

SPP15N60CFD

Rev. 1.3 page 12 2009-11-30