Datasheet spp08p06ph_rev1.6 Datasheet

SIPMOS Power-Transistor

°

Halogen-free according to IEC61249-2-21

°

Qualified according to AEC Q101

• Pb-free lead plating; RoHS compliant

SPP08P06P H

Features

·

P-Channel

·

Enhancement mode

·

Avalanche rated

·

d

v/dt

rated

·

175°C operating temperature

Type Package

SPP08P06P H PG-TO220-3

Maximum Ratings,at

T

= 25 °C, unless otherwise specified

j

Parameter

Continuous drain current

Product Summary

Drain source voltage

Drain-source on-state resistance Continuous drain current A

V

DS

R

DS(on)

I

D

-60

0.3

-8.8

V

W

Pin 1 PIN 2/4 PIN 3

G D S

Symbol UnitValue

I

D

A

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= -8.8 A ,

D

V

DD

= -25 V,

R

GS

= 25

Avalanche energy, periodic limited by

I

= -8.8 A,

S

T

= 175 °C

jmax

V

= -48 , di/dt = 200 A/µs,

DS

Gate source voltage Power dissipation

T

= 25 °C

C

Operating and storage temperature

W

T

jmax

I

D puls

E

AS

E

AR

dv/d

V

GS

P

tot

T

,

j

t

T

stg

-8.8

-6.2

-35.2

70 mJ

4.2 6Reverse diode dv/dt

±20 V

42 W

-55...+175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

kV/µs

Rev 1.6 Page 1

2011-08-31

Thermal Characteristics

SPP08P06P H

Parameter

Symbol UnitValues

min. max.typ.

Characteristics

R

thJC

Thermal resistance, junction - ambient, leaded SMD version, device on PCB:

R R

thJA thJA

@ min. footprint @ 6 cm

2

cooling area

Electrical Characteristics, at Parameter

1)

T

= 25 °C, unless otherwise specified

j

Symbol Values Unit

min. typ. max.

Static Characteristics

- 3.6-Thermal resistance, junction - case K/W

- 62

-

62 40

Drain- source breakdown voltage

V

= 0 V,

GS

Gate threshold voltage,

I

= -250 µA,

D

I

= -250 µA

D

T

= 25 °C

j

V

GS

=

V

DS

Zero gate voltage drain current

V V

V

DS DS

GS

= -60 V, = -60 V,

= -20 V,

V V

V

= 0 V,

GS

= 0 V,

GS

= 0 V

DS

T

= 25 °C

j

T

= 150 °C

j

Drain-source on-state resistance

V

= -10 V,

GS

I

= -6.2 A

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

-60 - V-

-2.1 -3 -4

-

-0.1

-10

-1

-100

- -10 -100Gate-source leakage current

- 0.23 0.3

µA

nA

W

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev 1.6 Page 2

2011-08-31

SPP08P06P H

Electrical Characteristics, at Parameter

Dynamic Characteristics

Transconductance

V

³

2*

I

*

DS

R

D

DS(on)max

,

I

D

= -6.2 A

Input capacitance

V

= 0 V,

GS

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

V

= -25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= -25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD G

= 6

= -30 V,

W

V

GS

= -10 V,

I

= -6.2 A,

D

T

= 25 °C, unless otherwise specified

j

Symbol Values Unit

min. typ. max.

g

fs

C

iss

C

oss

C

rss

t

d(on)

1.5

- 135105Output capacitance

-

- 24 ns16

S-3.6

335 420 pF-

9565

Rise time

V R

DD G

= 6

= -30 V,

W

V

GS

= -10 V,

Turn-off delay time

V R

DD G

= 6

= -30 V,

W

V

GS

= -10 V,

Fall time

V R

DD G

= 6

= -30 V,

W

V

GS

= -10 V,

I

= -6.2 A,

D

I

= -6.2 A,

D

I

= -6.2 A,

D

t

r

t

d(off)

t

f

- 6946

-

48 72

- 14 21

Rev 1.6 Page 3

2011-08-31

SPP08P06P H

Electrical Characteristics, at

Dynamic Characteristics

Gate to source charge

V

= -48 ,

DD

I

= -8.8 A

D

Gate to drain charge

V

= -48 V,

DD

I

= -8.8 A

D

Gate charge total

V

= -48 V,

DD

I

= -8.8 A,

D

V

GS

Gate plateau voltage

V

= -48 ,

DD

I

= -8.8 A

D

T

= 25 °C, unless otherwise specified

j

Q

gs

Q

gd

Q

g

= 0 to -10 V

V

(plateau)

ValuesSymbolParameter

min. typ. max.

-

4 6-

10

15-

- -3.85 - V

Unit

nC2.11.4

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V,

GS

I

= -8.8 A

F

Reverse recovery time

V

= -30 V,

R

I

=

I

, d

i

F

S

/dt = 100 A/µs

F

Reverse recovery charge

V

= -30 V,

R

I

=

l

, d

i

F

S

/dt = 100 A/µs

F

I

S

I

SM

V

t

rr

Q

SD

rr

- - -8.8 A

- - -35.2

- -1.17 -1.55 V

- 60 90 ns

- 100 150 nC

Rev 1.6 Page 4

2011-08-31

SPP08P06P H

SPP08P06P

Power dissipation

P

= f (

T

)

C

5

P

tot

50

W

40

35

30

25

20

15

10

Drain current

I

= f (

T

-10

A

-8

-7

-6

-5

-4

-3

-2

-1

)

C

V

D

parameter:

D

I

GS

³

10 V

0

0 20 40 60 80 100 120 140 160°C190

Safe operating area

I

= f (

V

D

parameter :

-10

A

-10

D

I

-10

)

DS

D

= 0 ,

2

1

V

=

)

n

o

(

S

D

0

R

T

= 25 °C

C

D

I

/

DS

T

C

t

= 12.0µs

p

DC

100 µs

1 ms

10 ms

0

0 20 40 60 80 100 120 140 160°C190

Transient thermal impedance

Z

= f (

t

1

0

)

p

D = t

single pulse

/

T

p

thJC

parameter :

10

K/W

10

thJC

-1

10

Z

-2

10

-3

10

T

D = 0.50

0.20

0.10

0.05

0.02

0.01

C

-1

-10

-1

-10

0

-10

1

V

DS

-10

2

Rev 1.6 Page 5

10

-4

10

-7

-6

-5

-4

-3

10

-2

0

s

10

t

p

2011-08-31

SPP08P06P H

SPP08P06P

Typ. output characteristic

I

= f (

V

);

T

t

p

= 42.00W

tot

=25°C

j

= 80 µs

j

D

DS

parameter:

-21

P

A

-18

-16

-14

D

I

-12

-10

-8

-6

-4

-2

0

0 -2 -4 -6 -8

Typ. drain-source-on-resistance

R

DS(on)

parameter:

V

i

GS a -4.0

b -4.5

h

c -5.0 d -5.5

g

e -6.0 f -6.5 g -7.0

f

h -7.5 i -8.0

e

j -10.0

d

c

b

a

[V]

DS(on)

R

V

-11

V

DS

= f (

I

)

D

V

GS

1.0

W

a

b

c

d

e

f

0.8

0.7

0.6

0.5

0.4

0.3

0.2

V

[V] =

GS

0.1

a

b

c

d

e

f

-4.0

-4.5

-5.0

-5.5

-6.0

0.0 0 -2 -4 -6 -8 -10 -12 -14

-6.5

-7.0

g

h

-7.5

-8.0

g

h

-10.0

i

j

A

-18

I

D

i

Typ. transfer characteristics

V

³

2 x

I

x

DS

parameter:

-30

A

-24

-22

-20

D

I

-18

-16

-14

-12

-10

-8

-6

-4

-2 0

0 -1 -2 -3 -4 -5 -6 -7 -8

D

t

= 80 µs

p

R

DS(on)max

I

D

= f (

V

GS

)

Typ. forward transconductance

g

= f(

I

);

T

fs

parameter:

6

=25°C

D

j

g

fs

S

4

fs

g

3

2

1

-10

V

GS

0

0 -2 -4 -6 -8 -10 -12 -14 -16

A

-20

I

D

Rev 1.6 Page 6

2011-08-31

SPP08P06P H

SPP08P06P

Drain-source on-state resistance

R

DS(on)

parameter :

DS(on)

R

W

1.0

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

= f (

T

)

j

I

= -6.2 A,

D

98%

typ

V

GS

= -10 V

Gate threshold voltage

V

parameter:

V

GS(th)

-5.0

V

-4.0

-3.5

GS(th)

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

= f (

T V

)

j

GS

=

V

DS

,

98%

typ

2%

I

= -250 µA

D

0.0

-60 -20 20 60 100 140

Typ. capacitances

C

= f (

V

)

DS

parameter:

10

pF

C

10

V

=0V, f=1 MHz

GS

3

2

1

0 -5 -10 -15 -20 -25 -30

°C

V

0.0

200

T

j

0.0

-60 -20 20 60 100

°C

180

T

j

Forward characteristics of reverse diode

I

= f (VSD)

F

parameter:

2

-10

A

C

iss

1

-10

F

I

C

oss

C

rss

-40

V

DS

0

-10

-1

-10

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4

, t

T

j

p = 80 µs

T

= 25 °C typ

j

T

= 175 °C typ

j

T

= 25 °C (98%)

j

T

= 175 °C (98%)

j

V

-3.0

V

SD

Rev 1.6 Page 7

2011-08-31

SPP08P06P H

W

SPP08P06P

Avalanche energy

E

= f (

T

AS

para.:

mJ

AS

E

)

j

I

= -8.8 A ,

D

80

60

50

40

30

20

10

V

= -25 V,

DD

R

GS

= 25

Typ. gate charge

V

parameter:

GS

V

-16

V

-12

-10

=

-8

-6

-4

-2

f (Q

)

Gate

I

= -8.8 A pulsed

D

0,2

V

DS max

0,8

V

DS max

0

25 45 65 85 105 125 145

Drain-source breakdown voltage

V

(BR)DSS

V

-72

V

-68

-66

-64

-62

-60

-58

= f (

T

)

j

°C

185

T

j

0

0 2 4 6 8 10 12

nC

Q

15

Gate

-56

-54

-60 -20 20 60 100 140

°C

200

T

j

Rev 1..6 Page 8

2011-08-31

PG-TO220-3

SPP08P06PH

Rev 1..6 Page9

2011-08-31

SPP08P06P H

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

).

Rev 1.6 Page 10

2011-08-31