Datasheet spp06n60c3_rev1.4 Datasheet

SPP06N60C3

CoolMOSTM Power Transistor

Features

• New revolutionary high voltage technology

• Ultra low gate charge

Product Summary

V

@ T

DS

R

DS(on),max

I

D

• Periodic avalanche rated

• High peak current capability

• Ultra low effective capacitances

• Extreme dv/dt rated

• Improved transconductance

Type Package Ordering Code Marking

j,max

650 V

0.75

6.2 A

PG-TO220-3-1

Ω

SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current Avalanche energy, single pulse

Avalanche energy, repetitive t Avalanche current, repetitive t

Drain source voltage slope dv/dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

I

D

TC=25 °C T

1)

AR

1),2)

1)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C ID=3.1 A, VDD=50 V ID=6.2 A, VDD=50 V

I T

V

GS

V

GS

P

tot

static V AC (f>1 Hz)

TC=25 °C

=100 °C

C

=6.2 A, VDS=480 V,

D

=125 °C

j

Value

6.2

3.9

18.6 200 mJ

0.5

6.2

50

±20 ±30

74

A

V/ns

W

Operating and storage temperature

T

j

stg

-55 ... 150

°C

, T

Rev. 1.4 page 1 2009-11-27

SPP06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

R

thJA

leaded - - 62

- - 1.7 K/W

SMD version, device

Thermal resistance, junction ambient

R

thJA

on PCB, minimal footprint

--62

SMD version, device

2

cooling

-35-

- - 260 °C

Soldering temperature

4)

Electrical characteristics, at T

on PCB, 6 cm

3)

area

T

sold

=25 °C, unless otherwise specified

j

1.6 mm (0.063 in.) from case for 10 s

Static characteristics

Drain-source breakdown voltage Avalanche breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

g

fs

=0 V, ID=250 µA =0 V, ID=6.2 A

VDS=VGS, ID=0.26 mA

VDS=600 V, VGS=0 V, T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=3.9 A, T

=25 °C

j

V

=10 V, ID=3.9 A,

GS

T

=150 °C

j

600 - - V

- 700 -

2.1 3 3.9

- 0.1 1 µA

- - 100

- - 100 nA

- 0.68 0.75

- 1.82 -

f=1 MHz, open drain - 1 |VDS|>2|ID|R

I

=3.9 A

D

DS(on)max

,

- 5.6 - S

Ω

Rev. 1.4 page 2 2009-11-27

SPP06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance Output capacitance Reverse transfer capacitance

Effective output capacitance, energy

5)

6)

related Turn-on delay time

Rise time Turn-off delay time Fall time

C C C

C

t t t t

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f=1 MHz

=0 V, VDS=0 V

V

GS

to 480 V

V

=480 V,

DD

V

=10 V, ID=6.2 A,

GS

=12 Ω

R

G

- 620 - pF

- 200 -

-17-

-28-

-47-

-7-ns

-12-

-52-

-10-

Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage

1)

Pulse width limited by maximum temperature T

2)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

Q Q Q V

gs

gd

g

plateau

j,max

V

=480 V, ID=6.2 A,

DD

V

=0 to 10 V

GS

only

connection. PCB is vertical in still air.

4)

Soldering temperature for TO263: 220 °C, reflow

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 3.3 - nC

-12-

-2431

- 5.5 - V

DSS.

Rev. 1.4 page 3 2009-11-27

SPP06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current Diode pulse current

Diode forward voltage

Reverse recovery time Reverse recovery charge Peak reverse recovery current

I

S

I

S,pulse

V

SD

t

rr

Q I

rrm

=25 °C

T

C

- - 18.6

- - 6.2 A

VGS=0 V, IF=6.2 A, T

=25 °C

j

- 0.97 1.2 V

- 400 - ns

V

=480 V, IF=IS,

rr

R

di

/dt=100 A/µs

F

- 3.5 - µC

-25-A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

R

th1

0.0325 K/W C

th1

0.0000502 Ws/K

R R R R

7)

R

th2

th3

th4

th5

C

thCA

th6

=0 K/W.

0.0448 C

0.251 C

0.31 C

0.301 C

th2

th3

th4

th5

C

th6 1.09

0.000303

0.000428

0.00243

0.00526

7)

models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

Rev. 1.4 page 4 2009-11-27

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D=0

tot

parameter: t

80

60

10

2

1

p

limited by on-state resistance

SPP06N60C3

1 µs

10 µs

100 µs

[W]

40

tot

P

20

0

0 40 80 120 160

TC [°C]

[A]

D

I

10

0

-1

-2

10

0

10

1

VDS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

I

=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C

D

parameter: D=t

1

10

0

10

[K/W]

thJC

Z

-1

10

/T parameter: V

p

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

[A]

D

I

GS

20

16

12

8

4

DC

10

6 V

5.5 V

5 V

1 ms

10 ms

7 V

10

3

2

20 V

6.5 V

4.5 V

10

-2

0

-1

-2

-3

-4

-5

10

-6

10

tp [s]

0

0 5 10 15 20

VDS [V]

4 V

Rev. 1.4 page 5 2009-11-27

SPP06N60C3

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

=f(VDS); Tj=150 °C R

D

parameter: V

GS

=f(ID); Tj=150 °C

DS(on)

parameter: V

GS

8

20 V

7 V

6.5 V

6

4

[A]

D

I

2

0

0 5 10 15 20

VDS [V]

6 V

5.5 V

5 V

4.5 V

4 V

4

V 4

V 4.5

3

]

Ω

[

2

DS(on)

R

1

0

0246810

ID [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=3.9 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

j

DS(on)max

V 5

V 5.5

V 6

V 20

2

1.6

1.2

]

Ω

[

R

DS(on)

0.8

98 %

typ

0.4

0

-60 -20 20 60 100 140 180

Tj [°C]

25

C °25

20

15

[A]

D

I

10

C °150

5

0

0246810

VGS [V]

Rev. 1.4 page 6 2009-11-27

SPP06N60C3

9 Typ. gate charge 10 Forward characteristics of reverse diode

V

=f(Q

GS

parameter: V

[V]

GS

V

); ID=6.2 A pulsed IF=f(VSD)

gate

DD

parameter: T

12

10

V 120

V 480

8

6

4

2

0

0102030

Q

[nC]

gate

j

2

10

[A]

F

I

10

25 °C

1

150 °C

0

-1

25 °C, 98%

0 0.5 1 1.5 2 2.5

VSD [V]

150 °C, 98%

11 Avalanche SOA 12 Avalanche energy

I

=f(tAR) EAS=f(Tj); ID=3.1 A; VDD=50 V

AR

parameter: T

[A]

AV

I

j(start)

8

250

200

6

150

4

125 °C 25 °C

[mJ]

AS

E

100

2

50

0

3

2

1

0

-1

-2

10

-3

10

0

20 60 100 140 180

tAR [µs]

Tj [°C]

Rev. 1.4 page 7 2009-11-27

13 Drain-source breakdown voltage 14 Typ. capacitances

SPP06N60C3

V

BR(DSS)

=f(Tj); ID=0.25 mA C =f(VDS); VGS=0 V; f=1 MHz

700

660

[V]

620

BR(DSS)

V

580

540

-60 -20 20 60 100 140 180

Tj [°C]

4

10

3

10

2

10

C [pF]

1

10

0

10

0 100 200 300 400 500

Ciss

Coss

Crss

VDS [V]

15 Typ. C

E

=f(VDS)

oss

5

4

3

[µJ]

oss

E

2

1

0

stored energy

oss

0 100 200 300 400 500 600

VDS [V]

Rev. 1.4 page 8 2009-11-27

Definition of diode switching characteristics

SPP06N60C3

Rev. 1.4 page 9 2009-11-27

PG-TO220-3-1

SPP06N60C3

Rev. 1.4 page 10 2009-11-27

SPP06N60C3

Rev. 1.4 page 11 2009-11-27