Datasheet spp04n80c3_rev2.91 Datasheet

SPP04N80C3

V

CoolMOSTM Power Transistor

Features

• New revolutionary high voltage technology

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

• Ultra low effective capacitances

CoolMOSTM 800V designed for:

• Industrial application with high DC bulk voltage

• Switching Application ( i.e. active clamp forward )

1)

for target applications

Product Summary

V

DS

R

DS(on)max @ Tj

Q

g,typ

= 25°C 1.3

800

Ω

23 nC

PG-TO220-3

Type Package Marking

SPP04N80C3 PG-TO220-3 04N80C3

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

TC=25 °C TC=100 °C

Pulsed drain current

2)

Avalanche energy, single pulse Avalanche energy, repetitive t Avalanche current, repetitive t

AR

MOSFET dv/dt ruggedness dv/dt Gate source voltage

2),3)

I

D,pulse

E

AS

E

AR

I

AR

V

GS

TC=25 °C ID=0.8 A, VDD=50 V ID=4 A, VDD=50 V

VDS=0…640 V

static V AC (f>1 Hz)

Value

4

2.5 12

170 mJ

0.1

4

50

±20 ±30

A

A V/ns

Power dissipation Operating and storage temperature

P

tot

Tj, T

stg

TC=25 °C

63

-55 ... 150

W °C

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 2.9

1 page 1 2011-09-28

Maximum ratings, at Tj=25 °C, unless otherwise specified

wave soldering only allowed at leads

SPP04N80C3

Parameter Symbol Conditions Unit

Continuous diode forward current

I

S

Value

4

A

TC=25 °C

Diode pulse current Reverse diode dv/dt

2)

4)

Parameter Symbol Conditions Unit

I

S,pulse

dv/dt

12

4 V/ns

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case Thermal resistance, junction -

ambient

Soldering temperature,

R

thJC

R

thJA

T

sold

leaded - - 62

1.6 mm (0.063 in.) from case for 10s

- - 2 K/W

- - 260 °C

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

I

DSS

=0 V, ID=250 µA =0 V, ID=4 A

VDS=VGS, ID=0.24 mA VDS=800 V, VGS=0 V,

Tj=25 °C

VDS=800 V, VGS=0 V, Tj=150 °C

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

VGS=20 V, VDS=0 V VGS=10 V, ID=2.5 A,

Tj=25 °C

VGS=10 V, ID=2.5 A, Tj=150 °C

800 - - V

- 870 -

2.1 3 3.9

- - 10 µA

- 50 -

- - 100 nA

- 1.1 1.3

- 3 -

Ω

Gate resistance

Rev. 2.9

1 page 2 2011-09-28

R

G

f=1 MHz, open drain

- 1.2 -

Ω

SPP04N80C3

Gate Charge Characteristics

Reverse Diode

=25 °C

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance Output capacitance

Effective output capacitance, energy related

5)

Effective output capacitance, time related

6)

Turn-on delay time Rise time

C C

C

t t

iss

oss

o(er)

o(tr)

d(on)

r

VGS=0 V, VDS=100 V, f=1 MHz

VGS=0 V, VDS=0 V

to 480 V

VDD=400 V,

- 570 - pF

- 25 -

- 19 -

- 51 -

- 25 - ns

- 15 -

VGS=0/10 V, ID=4 A,

Turn-off delay time Fall time

t t

d(off)

f

RG=22 ?, T

j

- 72 -

- 12 -

Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage

Diode forward voltage

Reverse recovery time Reverse recovery charge Peak reverse recovery current

1)

J-STD20 and JESD22

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

j,max

Q Q Q V

V

t

rr

Q I

rrm

gs

gd

g

plateau

SD

rr

VDD=640 V, ID=4A, VGS=0 to 10 V

VGS=0 V, IF=IS=4 A, Tj=25 °C

VR=400 V, IF=IS=4 A,

diF/dt=100 A/µs

- 3 - nC

- 12 -

- 23 31

- 5.5 - V

- 1 1.2 V

- 520 - ns

- 4 - µC

- 12 - A

4)

ISD=ID, di/dt=400A/µs, V

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

Rev. 2.9

1 page 3 2011-09-28

DClink

= 400V, V

peak<V(BR)DSS

, Tj<T

, identical low side and high side switch

jmax

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

DSS.

1 Power dissipation 2 Safe operating area

P

=f(TC) ID=f(VDS); TC=25 °C; D=0

tot

parameter: t

p

SPP04N80C3

70

10

2

limited by on-state resistance

60

1

10

50

40

[W]

tot

P

30

20

[A]

D

I

10

0

-1

10

-2

0

0 25 50 75 100 125 150

TC [°C]

10

1 10 100 1000

VDS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

1 µs

10 µs

100 µs

1 ms

10 ms

DC

Z

=f(tP) ID=f(VDS); Tj=25 °C; tp=10 µs

thJC

parameter: D=tp/T parameter: V

10

1

15

GS

12

10

[K/W]

thJC

Z

-1

10

0

0.5

0.2

0.1

0.05

0.02

0.01 single pulse

[A]

D

I

9

6

3

-2

10

-5

10

-4

10

-3

10

-2

10

-1

0

0 5 10 15 20 25

tp [s]

20 V

10 V

6 V

5.5 V

5 V

4.5 V

VDS [V]

Rev. 2.9

1 page 4 2011-09-28

SPP04N80C3

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=150 °C; tp=10 µs R parameter: V

6

5

4

3

[A]

D

I

2

1

0

GS

20 V

10 V

6 V

5.5 V

5 V

4.5 V

0 5 10 15 20 25

VDS [V]

=f(ID); Tj=150 °C

DS(on)

parameter: V

5.4

5

4.6

]

4.2

Ω

[

DS(on)

3.8

R

3.4

3

2.6 0 2 4 6 8

4 V

GS

4.5 V

5 V

5.5 V

ID [A]

6 V

10 V

20 V

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R

=f(Tj); ID=2.5 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R

DS(on)

parameter: T

3.6

3.2

2.8

2.4

]

Ω

[

DS(on)

1.6

R

1.2

0.8

0.4

2

98 %

typ

[A]

D

I

15

10

5

DS(on)max; tp

j

=10 µs

25 °C

150 °C

Rev. 2.9

0

-60 -20 20 60 100 140 180

Tj [°C]

0

0 2 4 6 8 10

VGS [V]

1 page 5 2011-09-28

SPP04N80C3

9 Typ. gate charge 10 Forward characteristics of reverse diode

VGS=f(Q

gate

parameter: V

10

8

6

[V]

GS

V

4

2

0

0 4 8 12 16 20 24

); ID=4 A pulsed IF=f(VSD); tp=10 µs

DD

160 V

Q

[nC]

gate

640 V

parameter: T

2

10

1

10

[A]

F

I

0

10

-1

10

0 0.5 1 1.5 2

j

150°C (98%)

25 °C

25°C (98°C)

150 °C

VSD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

EAS=f(Tj); ID=0.8 A; VDD=50 V V

180

150

120

90

[mJ]

AS

E

60

30

0

25 50 75 100 125 150

Tj [°C]

=f(Tj); ID=0.25 mA

BR(DSS)

960

920

880

840

[V]

BR(DSS)

800

V

760

720

680

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 2.9

1 page 6 2011-09-28

13 Typ. capacitances 14 Typ. Coss stored energy

SPP04N80C3

C=f(VDS); VGS=0 V; f=1 MHz E

4

10

3

10

2

10

[pF]

C

1

10

0

10

0 100 200 300 400 500 600 700 800

Ciss

Coss

Crss

VDS [V]

=f(VDS)

oss

5

4

3

[µJ]

oss

E

2

1

0

0 100 200 300 400 500 600 700 800

VDS [V]

Rev. 2.9

1 page 7 2011-09-28

Definition of diode switching characteristics

SPP04N80C3

Rev. 2.9

1 page 8 2011-09-28

PG-TO220-3: Outline

SPP04N80C3

Rev. 2.9

1 page 9 2011-09-28

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

SPP04N80C3

Rev. 2.9

1 page 10 2011-09-28