Semiconductor Group 1 02.97
Laser Diode on Submount SPL CGxx
1.0 W cw (Class 4 Laser Product) (SFH 4804x2)
Features
•
Efficient radiation source for cw and pulsed operation
•
Reliable InGa(Al)As strained quantum-well material
•
Single emitting area 200 µm × 1 µm
•
Small C-type copper submount for OEM designs
Applications
•
Pumping solid state lasers (Nd: YAG, Yb: YAG, …)
•
Laser soldering, heating, illumination
•
Printing, marking, surface processing
•
Medical applications
•
Testing and measurement applications
Type
Old Type
(as of Oct. 1996)
Wavelength
*)
Ordering Code
SPL CG81
SPL CG85
SPL CG94
SPL CG98
SFH 480402
–
SFH 480442
–
808 nm
850 nm
940 nm
980 nm
Q62702-P358
on request
Q62702-P1617
on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings
(
T
A
= 25 °C)
Parameter
Symbol Values Unit
min. typ. max.
Output power (continuous wave)
1)
P
opt
– – 1.1 W
Output power (quasi-continuous wave)
1)
(
t
p
≤ 150 µs, duty cycle ≤ 1%)
P
qcw
– – 1.5 W
Reverse voltage
V
R
––3V
Operating temperature
2)
T
op
– 10 … + 60 °C
Storage temperature
2)
T
stg
– 40 … + 85 °C
Soldering temperature, max. 10 s
T
s
– – 140 °C
1) Optical power measurements refer to a detector with NA = 0.6
2) Bedewing is excluded
SPL CGxx
(SFH 4804x2)
Semiconductor Group 2
Characteristics
(TA = 25 °C)
Parameter
Symbol Values Unit
min. typ. max.
Emission wavelength
1)
λ
peak
803
840
935
808
850
940
813
860
945
nm
Spectral width (FWHM)
1)
∆λ
2nm
Output power
2)
P
opt
1.0 W
Differential efficiency 2) 808 nm
850 nm
940 nm
η
0.75
0.75
0.70
0.95
0.85
0.80
1.1
1.0
0.9
W/A
Threshold current 808 nm
850 nm
940 nm
I
th
0.40
0.30
0.30
0.45
0.40
0.35
0.55
0.50
0.40
A
Operating current 1) 808 nm
850 nm
940 nm
I
op
1.3
1.3
1.4
1.5
1.5
1.6
1.8
1.8
1.8
A
Operating voltage
1)
V
op
2.0 V
Differential series resistance
r
s
– 0.2 0.4
Ω
Characteristic temperature (threshold)
3)
T
0
150 K
Temperature coefficient of operating
current
∂
I
op
/ ∂
T
0.5 %/K
Temperature coefficient of wavelength
4)
∂λ / ∂
T
0.25 0.27 0.30 nm/K
Thermal resistance (junction → heat sink)
R
th JA
10 K/W
1) Standard operating conditions refer to 1 W cw measured with NA = 0.6
2) Optical power measurements refer to a detector with NA = 0.6
3) Model for the thermal behavior of threshold current:
I
th
(
T
2
) =
I
th
(
T
1
) × exp(
T
2
–
T
1
)/
T
0
4) Depending on emission wavelength
SPL CGxx
(SFH 4804x2)
Semiconductor Group 3 09.96
Optical Characteristics (TA = 25 °C)
Radiant Power P
opt
vs I
F
Mode Spectrum I
rel
vs λ (P
opt
= 1.0 W)
Farfield Distribution
Parallel to Junction I
rel
vs θ
||
Farfield Distribution
Perpendicular to Junction I
rel
vs θ
⊥
SPL CGxx
(SFH 4804x2)
Semiconductor Group 4
Notes for Operation
1. Eye Protection
This laser is a Class 4 Laser product.
Refer to the relevant safety regulations for protection during handling and operation.
2. Overload Protection
The specified values are valid as long as the diode has not been not overloaded. Voltage
spikes from the power supply unit, even when applied for nanoseconds only, may cause
irreversible damage to the laser diode. Such spikes may occur when the power supply is
turned on or off, or they may reach the laser diode from the line via the coupling capacitance
of electronically controlled devices.
The power supply should therefore be provided with appropriate protection circuits.
Handling Notes
1. Package
To avoid electrostatic damages it is recommended to observe the same rules as for handling
MOS-devices.
2. Mounting
When soldering, gluing or clamping, do not exceed the following limits:
• max. soldering temperature: 140 °C
• max. soldering time: 10 s
• max. curing temperature for adhesives: 100 °C
Any deformation of the heat sink by clamping must be avoided.
3. Electrical Connection
The cathode may be bonded by spot-welding, clamping or soldering.
In all these cases ESD-guidelines must be followed.
SPL CGxx
(SFH 4804x2)
Semiconductor Group 5 09.96
Package Outlines
(Dimensions in mm, unless specified).
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