Page 1
Preliminary data SPI70N10L
)
j
j
g
SPP70N10L,SPB70N10L
SIPMOS
=
=Power-Transistor
==
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
dv/dt rated
Type Package Ordering Code
SPP70N10L P-TO220-3-1 Q67040-S4175
SPB70N10L P-TO263-3-2 Q67040-S4170
P-TO263-3-2 P-TO220-3-1P-TO262-3-1
Marking
70N10L
70N10L
Product Summary
V
DS
R
DS(on
I
D
100 V
16 m
70 A
SPI70N10L P-TO262-3-1 Q67060-S7428
70N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
T
=100°C
C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by T
Reverse diode dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
max
I
I
E
E
dv/dt 6 kV/µs
Gate source voltage V
Power dissipation
TC=25°C
P
D
D puls
AS
AR
GS
tot
70
50
280
700 mJ
25
±20
250 W
A
V
Operating and storage temperature T
T
,
st
-55... +175
°C
IEC climatic category; DIN IEC 68-1 55/175/56
Page 1
2001-08-24
Page 2
Preliminary data SPI70N10L
SPP70N10L,SPB70N10L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
R
R
thJC
thJA
thJA
- - 0.6 K/W
- - 62.5
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=2mA
Gate threshold voltage, VGS = V
I
= 2 mA
D
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
100 - - V
1.2 1.6 2
-
0.1
µA
1
V
=100V, VGS=0V, Tj=150°C
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=50A
Drain-source on-state resistance
VGS=10V, ID=50A
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
I
GSS
R
DS(on)
R
DS(on)
-
-
100
- 10 100 nA
- 14 25
- 10 16
2001-08-24
m
Page 3
Preliminary data SPI70N10L
(p
)
SPP70N10L,SPB70N10L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
VDS
2*ID*R
DS(on)max
I
=50A
D
VGS=0V, VDS=25V,
f=1MHz
,
30 65 - S
- 3630 4540 pF
- 640 800
- 345 430
VDD=50V, VGS=4.5V,
I
=70A, RG=1.3
D
- 70 105 ns
- 250 375
- 250 375
- 95 145
VDD=80V, ID=70A - 10 15 nC
- 34 51
VDD=80V, ID=70A,
V
=0 to 10V
GS
- 160 240
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
lateau
VDD=80V, ID=70A - 3.22 - V
TC=25°C - - 70 A
- - 280
VGS=0V, IF=140A - 1.2 1.8 V
VR=50V, I
di
/dt=100A/µs
F
lS,
=
F
- 100 150 ns
- 600 900 nC
Page 3
2001-08-24
Page 4
Preliminary data SPI70N10L
SPP70N10L,SPB70N10L
1 Power dissipation
P
= f (TC)
tot
SPP70N10L
280
W
240
220
200
tot
180
P
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160°C190
2 Drain current
ID = f (TC)
parameter: VGS
SPP70N10L
75
A
60
55
50
D
I
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160°C190
T
C
10 V
T
C
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
3
SPP70N10L
10
A
2
10
D
I
1
10
0
10
-1
10
D
I
/
S
D
V
=
)
n
o
(
S
D
R
10
0
10
1
tp = 18.0µs
DC
10
100 µs
1 ms
10 ms
2
4 Transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
SPP70N10L
1
10
K/W
0
10
-1
10
thJC
Z
-2
10
-3
10
-4
10
3
10
V
V
DS
10
-5
10
single pulse
-7
10
-6
-5
10
-4
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-3
10
-2
s
t
0
10
p
Page 4
2001-08-24
Page 5
Preliminary data SPI70N10L
SPP70N10L,SPB70N10L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP70N10L
170
P
= 250W
tot
A
140
120
D
I
100
80
60
40
20
0
0 1 2 3 4
k
i
g
j
l
h
e
f
VGS [V]
a 2.5
b 3.0
c 3.5
d 4.0
d
e 4.5
f 5.0
g 5.5
h 6.0
c
i 6.5
j 7.0
k 8.0
l 10.0
b
a
6 Typ. drain-source on resistance
R
DS(on)
parameter: V
5.5
V
V
DS
= f (ID)
GS
SPP70N10L
80
b
m
60
DS(on)
50
R
40
30
20
V
[V] =
GS
10
b
c
d
e
3.0
3.5
4.0
0
0 20 40 60 80 100
4.5
5.0
f
5.5
c
g
h
i
6.0
6.5
7.0
d
e
f
g
h
i
j
k
8.0
l
k
l
10.0
130
A
I
D
j
7 Typ. transfer characteristics
ID= f ( VGS ); VDS
2 x ID x R
DS(on)max
parameter: tp = 80 µs
70
A
60
55
50
45
D
I
40
35
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
60
S
50
45
40
fs
g
35
30
25
20
15
10
5
V
5
V
GS
0
0 10 20 30 40
fs
A
55
I
D
Page 5
2001-08-24
Page 6
Preliminary data SPI70N10L
SPP70N10L,SPB70N10L
9 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 50 A, VGS = 4.5 V
SPP70N10L
110
m
90
80
DS(on)
70
R
60
50
40
30
20
10
0
-60 -20 20 60 100 140
98%
typ
°C
10 Gate threshold voltage
V
GS(th)
= f (Tj)
parameter: VGS = VDS, ID = 2 mA
3
V
2.4
2.2
2
GS(th)
V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
200
T
j
0
-60 -20 20 60 100 140
°C
max
typ
min
200
T
j
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
pF
C
3
10
2
10
0 5 10 15 20 25 30
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
3
SPP70N10L
10
A
C
iss
2
10
F
I
C
oss
C
rss
V
40
V
DS
1
10
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
Page 6
2001-08-24
Page 7
Preliminary data SPI70N10L
SPP70N10L,SPB70N10L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 70 A , VDD = 25 V, RGS = 25
700
mJ
600
550
500
AS
450
E
400
350
300
250
200
150
100
50
0
25 45 65 85 105 125 145
°C
T
14 Typ. gate charge
V
= f (Q
GS
185
j
parameter: ID = 70 A pulsed
SPP70N10L
16
V
12
GS
10
V
8
6
4
2
0
0 40 80 120 160 200
Gate
0,2
)
V
DS max
0,8 V
DS max
nC
Q
280
Gate
15 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
SPP70N10L
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 140
°C
200
T
j
Page 7
2001-08-24
Page 8
Preliminary data SPI70N10L
SPP70N10L,SPB70N10L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Further information
Please notice that the part number is BSPP70N10L, BSPB70N10L and BSPI70N10L, for
simplicity the device is referred to by the term SPP70N10L, SPB70N10L and SPI70N10L
throughout this documentation
Page 8
2001-08-24
Page 9
Loading...