Datasheet SPI20N60CFD Datasheet (INFINEON)

SPI20N60CFD

S

jma

DS(on)

)

j

j

AR

j

stg

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best R

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Intrinsic fast-recovery body diode

• Extreme low reverse recovery charge

Type Package Pb-free

SPI20N60CFD PG-TO262 Yes

DS(on

in TO 220

V

D

Marking

20N60CFD

@ T

R

650 V

x

0.22 Ω

I

D

20.7 A

PG-TO262

Maximum Ratings

Parameter

Continuous drain current

= 25 °C

T

C

= 100 °C

T

C

Pulsed drain current, tp limited by T

max

Avalanche energy, single pulse

= 10 A, VDD = 50 V

I

D

Avalanche energy, repetitive tAR limited by T

jmax

1)

ID = 20 A, VDD = 50 V

Avalanche current, repetitive tAR limited by T

max

Reverse diode dv/dt

IS=20.7A, VDS=480V, Tj=125°C

Gate source voltage V

Gate source voltage AC (f >1Hz) V

Power dissipation, T

= 25°C P

C

Operating and storage temperature T

Symbol Value Unit

I

D

A

20.7

13.1

I

D puls

E

AS

E

AR

I

52

690 mJ

1

20 A

dv/dt 40 V/ns

GS

GS

tot

, T

±20

±30

208 W

-55... +150

V

°C

2007-02-01Rev. 2.5 Page 1

Maximum Ratings

(BR)

)

S

SPI20N60CFD

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 20.7 A, Tj = 125 °C

Maximum diode commutation speed

VDS = 480 V, ID = 20.7 A, Tj = 125 °C

Symbol Value Unit

dv/dt 80 V/ns

diF/dt 900

Thermal Characteristics

Parameter

Thermal resistance, junction - case R

Thermal resistance, junction - ambient, leaded R

Soldering temperature, wavesoldering

Symbol Values Unit

thJC

thJA

T

sold

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions Values Unit

A/µs

min. typ. max.

- - 0.6 K/W

- - 62

- - 260 °C

min. typ. max.

Drain-source breakdown voltage V

Drain-Source avalanche

V

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance R

(BR)DS

GS(th

DSS

GSS

DS(on)

G

VGS=0V, ID=0.25mA 600 - - V

DSS

VGS=0V, ID=20A - 700 -

ID=1000µΑ, VGS=V

VDS=600V, VGS=0V,

=25°C,

T

j

=150°C

T

j

VGS=20V, VDS=0V - - 100 nA

VGS=10V, ID=13.1A,

=25°C

T

j

=150°C

T

j

f=1MHz, open Drain - 0.54 -

3 4 5

D

-

-

-

-

2.1

1700

0.19

0.51

µA

-

-

Ω

0.22

-

2007-02-01Rev. 2.5 Page 2

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

)

r

)

f

g

gd

(p

)

SPI20N60CFD

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance,

2)

C

energy related

Effective output capacitance,

3)

C

time related

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

fs

iss

rss

o(er)

o(tr)

d(on

d(off

VDS≥2*ID*R

=13.1A

I

D

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

=0V to 480V

V

DS

VDD=380V, VGS=0/10V,

=20.7A, RG=3.6Ω

I

D

DS(on)max

,

min. typ. max.

- 17.5 - S

- 2400 - pF

- 780 -

- 50 -

- 83 - pF

- 160 -

- 12 - ns

- 15 -

- 59 -

- 6.4 -

Gate Charge Characteristics

Gate to source charge

Q

s

VDD=480V, ID=20.7A - 15 - nC

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

is a fixed capacitance that gives the same stored energy as C

C

o(er)

3

is a fixed capacitance that gives the same charging time as C

C

o(tr)

g

lateau

VDD=480V, ID=20.7A,

=0 to 10V

V

GS

VDD=480V, ID=20.7A - 7 - V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 54 -

- 95 124

AV=EAR

*f.

DSS

DSS

.

.

2007-02-01Rev. 2. Page 3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

D

r

r

SPI20N60CFD

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Peak rate of fall of reverse

S

r

r

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

Symbol

Value Unit Symbol Value Unit

min. typ. max.

TC=25°C - - 20.7 A

- - 52

VGS=0V, IF=I

VR=480V, IF=IS ,

/dt=100A/µs

di

F

S

- 1 1.2 V

- 150 - ns

- 1 - µC

- 13 - A

- 1400 - A/µs

Thermal resistance

R

th1

R

th2

R

h

R

th4

R

th5

R

th6

P

tot

typ. typ.

Thermal capacitance

0.007686 K/W

0.015

0.029

0.114

0.136

0.059

T

R

j T

th1

(t)

C

th1

C

th2

C

th1

C

th2

C

h

C

th4

C

th5

C

th6

R

th,n

C

th,n

T

case

amb

External Heatsink

0.0003764

0.001412

0.001932

0.005299

0.012

0.091

Ws/K

2007-02-01Rev. 2.5 Page 4

SPI20N60CFD

1 Power dissipation

= f (TC)

P

tot

SPP20N60CFD

240

W

200

180

160

tot

P

140

120

100

80

60

40

20

0

0 20 40 60 80 100 120

°C

2 Safe operating area

= f ( VDS )

I

D

10

=25°C

C

1

10

2

V

3

10

V

DS

parameter : D = 0 , T

2

10

A

1

10

D

I

0

10

-1

10

-2

10

160

T

C

10

tp=0.001 ms
tp=0.01 ms
tp=0.1 ms
tp=1 ms
DC

0

3 Transient thermal impedance

= f (tp)

Z

thJC

parameter: D = t

0

10

K/W

-1

10

thJC

Z

-2

10

-3

10

-4

10

10-710-610-510-410-310

/T

p

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

4 Typ. output characteristic

= f (VDS); Tj=25°C

I

D

parameter: t

70

A

50

D

I

40

30

20

10

-2

s

0

10

t

p

0

0 4 8 12 16 20 V 28

= 10 µs, V

p

Vgs = 10V
Vgs = 8V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V

GS

V

DS

2007-02-01Rev. 2.5 Page 5

SPI20N60CFD

5 Typ. output characteristic

= f (VDS); Tj=150°C

I

D

parameter: t

40

A

30

D

I

25

20

15

10

5

0

0 4 8 12 16 20 V 28

= 10 µs, V

p

Vgs = 20V
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V

GS

6 Typ. drain-source on resistance

R

parameter: T

V

DS

=f(ID)

DS(on)

=150°C, V

j

1.5

GS

Ω

DS(on)

R

0.9

0.6

0.3

0 5 10 15 20 25 30 A 40

Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 6.5V
Vgs = 7V
Vgs = 7.5V
Vgs = 20V

I

D

7 Drain-source on-state resistance

R

parameter : I

= f (Tj)

DS(on)

= 13.1 A, VGS = 10 V

D

SPP20N60CFD

1.3

Ω

1.1

1

0.9

DS(on)

0.8

R

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

-60 -20 20 60 100

98%

typ

°C

8 Typ. transfer characteristics

= f ( VGS ); VDS≥ 2 x ID x R

I

D

DS(on)max

parameter: tp = 10 µs

70

A

Tj = 25°C

50

D

I

40

30

20

10

180

T

j

0

0 4 8 12 V 20

Tj = 150°C

V

GS

2007-02-01Rev. 2.5 Page 6

SPI20N60CFD

9 Typ. gate charge

= f (Q

V

GS

parameter: I

SPP20N60CFD

16

V

0.2 V

12

0.8 V

GS

10

V

8

6

4

2

0

0 20 40 60 80 100 120

)

Gate

= 20.7 A pulsed

D

DS max

DS max

nC

Q

150

Gate

10 Forward characteristics of body diode

= f (VSD)

I

F

parameter: Tj , t

2

SPP20N60CFD

10

A

1

10

F

I

0

10

-1

10

0 0.4 0.8 1.2 1.6 2 2.4

p = 10 µs

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

V

3

V

SD

11 Avalanche SOA

= f (tAR)

I

AR

par.: T

≤ 150 °C

j

20

A

AR

I

10

5

0

10-310-210-110010110

Tj(Start)=125°C

Tj(Start)=25°C

2

µs

t

AR

10

12 Avalanche energy

= f (Tj)

E

AS

par.: I

4

= 10 A, VDD = 50 V

D

750

mJ

600

550

500

AS

E

450

400

350

300

250

200

150

100

50

0

20 40 60 80 100 120

°C

160

T

j

2007-02-01Rev. 2.5 Page 7

SPI20N60CFD

13 Drain-source breakdown voltage

V

(BR)DSS

(BR)DSS

V

= f (Tj)

SPP20N60CFD

720

V

680

660

640

620

600

580

560

540

-60 -20 20 60 100

°C

14 Avalanche power losses

= f (f )

P

AR

parameter: E

500

W

AR

P

300

200

100

0

180

T

j

10

4

AR

=1mJ

10

5

Hz

10

6

f

15 Typ. capacitances

C = f (V

parameter: V

10

pF

10

C

10

10

10

)

DS

=0V, f=1 MHz

5

4

3

2

1

0 100 200 300 400 V 600

GS

Crss

Ciss

Coss

16 Typ. C

=f(VDS)

E

oss

14

stored energy

oss

µJ

10

oss

E

8

6

4

2

0

0 100 200 300 400 V 600

V

DS

V

DS

2005-02-01Rev. 2.5 Page 8

SPI20N60CFD

17 Typ. reverse recovery charge

Qrr = f(TJ)

parameter: ID = 20.7A

1800

1700

1600

rr

Q [nC]

1500

1400

1300

1200

1100

1000

25 50 75 °C 125

18 Typ. reverse recovery charge

Qrr = f(ID)

parameter: di/dt = 100 A/µs

1800

1700

1600

1500

1400

rr

1300

Q [nC]

1200

1100

1000

900

800

700

600

500

400

T

j

Tj = 125°C

Tj = 25°C

2 4 6 8 10 12 14 16 A 20

I

D

19 Typ. reverse recovery charge

Qrr = f(di/dt)

parameter: ID = 20.7 A

3400

3200

3000

2800

2600

rr

Q [nC]

2400

2200

2000

1800

1600

1400

1200

1000

100 200 300 400 500 600 700 A/µs 900

Tj = 125°C

Tj = 25°C

di/dt

2007-02-01Rev. 2.5 Page 9

Definition of diodes switching characteristics

SPI20N60CFD

2007-02-01Rev. 2.5 Page 10

PG-TO-262-3-1

SPI20N60CFD

Rev. 2.5 Page 11

2007-02-01

SPI20N60CFD

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© Infineon Technologies AG 1999
All Rights Reserved.

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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
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2007-02-01Rev. 2.5 Page 12