Page 1
SPI15N65C3
CoolMOSTM Power Transistor
Features
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
1)
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CoolMOS C3 designed for:
• Notebook Adapter
Type Package Marking
SPI15N65C3 P-TO262-3-1 15N65C3
for target applications
Product Summary
V
DS
R
DS(on),max
Q
g,typ
TO-262-3-1
650 V
0.28
63 nC
Ω
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
3)
AR
AR
2),3)
3),4)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=3 A, VDD=50 V
ID=5 A, VDD=50 V
V
V
GS
static V
AC (f>1 Hz)
P
tot
, T
T
j
TC=25 °C
stg
=100 °C
C
=0...480 V
DS
Value
15
9.4
45
460 mJ
0.8
5.0
50
±20
±30
156
-55 ... 150
A
A
V/ns
W
°C
Rev. 2.0 page 1 2007-09-10
Page 2
Maximum ratings, at Tj=25 °C, unless otherwise specified
V
V
SPI15N65C3
Parameter Symbol Conditions Unit
2)
Continuous diode forward current
Diode pulse current
3)
I
S
I
S,pulse
T
C
=25 °C
Parameter Symbol Conditions Unit
Value
15
45
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 0.8 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
=
DS
I
,
GS
=0.675 mA
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=9.4 A,
T
=25 °C
j
V
=10 V, ID=9.4 A,
GS
T
=150 °C
j
650 - - V
2.1 3 3.9
- 0.5 25 µA
-25-
- - 100 nA
- 0.25 0.28
- 0.68 -
f =1 MHz, open drain - 1.4 -
Ω
Ω
Rev. 2.0 page 2 2007-09-10
Page 3
SPI15N65C3
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
5)
related
Effective output capacitance, time
6)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=25 V,
V
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
=400 V,
V
DD
V
=10 V, ID=15 A,
GS
=6.8 Ω
R
G
- 1600 - pF
- 540 -
-67-
- 120 -
-32-ns
-14-
-70-
-11-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
gs
gd
g
plateau
V
=480 V, ID=15 A,
DD
V
=0 to 10 V
GS
-9-nC
-29-
-63
- 5.4 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature.
3)
Pulse width tp limited by T
4)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
V
SD
t
rr
Q
rr
I
rrm
VGS=0 V, IF=15 A,
T
=25 °C
j
VR=480 V, IF=IS,
di
/dt =100 A/µs
F
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 1.0 1.2 V
- 420 - ns
-8-µC
-32-A
DSS.
DSS.
Rev. 2.0 page 3 2007-09-10
Page 4
1 Power dissipation 2 Safe operating area
P
=f(TC) ID=f(VDS); TC=25 °C; D =0
tot
parameter: t
160
140
10
2
p
limited by on-state
resistance
SPI15N65C3
1 µs
120
1
10
100
[W]
tot
P
80
60
[A]
D
I
10
0
40
20
-1
0
0 25 50 75 100 125 150
TC [°C]
10
10
0
10
1
VDS [V]
3 Max. transient thermal impedance 4 Typ. output characteristics
Z
=f(tp) ID=f(VDS); Tj=25 °C
(thJC)
parameter: D=t
0
10
/T parameter: V
p
0.5
GS
50
40
10 µs
100 µs
8 V
10 ms
10
1 ms
2
10 V
20 V
10
3
DC
7 V
0.2
[K/W]
10
thJC
Z
10
-1
-2
10
0.1
0.05
0.02
0.01
single pulse
-5
10
30
[A]
D
I
20
10
0
-4
10
-3
10
-2
10
-1
5 V
4.5 V
0 5 10 15 20 25
tp [s]
6 V
5.5 V
VDS [V]
Rev. 2.0 page 4 2007-09-10
Page 5
SPI15N65C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
=f(VDS); Tj=150 °C R
D
parameter: V
GS
=f(ID); Tj=150 °C
DS(on)
parameter: V
GS
25
20
6 V
7 V
5.5 V
15
[A]
D
I
10
5
0
0 5 10 15 20 25
VDS [V]
20 V
10 V
8 V
5 V
4.5 V
4
3
]
Ω
[
2
DS(on)
R
1
5 V
5.5 V
0
0 10203040
ID [A]
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R
=f(Tj); ID= 9.4 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R
DS(on)
parameter: T
j
DS(on)max
20 V
7 V
6.5 V
6 V
0.8
50
25°C
40
0.6
[A]
D
I
30
150°C
20
]
Ω
[
R
DS(on)
0.4
98 %
typ
0.2
10
0
-50 0 50 100 150
Tj [°C]
0
0246810
VGS [V]
Rev. 2.0 page 5 2007-09-10
Page 6
SPI15N65C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
=f(Q
GS
parameter: V
); ID= 15 A pulsed IF=f(VSD)
gate
DD
10
parameter: T
2
10
j
9
8
7
6
[V]
5
GS
V
4
3
2
1
0
020406080
120 V
25 °C
480 V
Q
[nC]
gate
1
10
150 °C
[A]
F
I
0
10
0 0.5 1 1.5 2
25 °C, 98%
VSD [V]
11 Avalanche energy 12 Drain-source breakdown voltage
E
=f(Tj); ID=3 A; VDD=50 V V
AS
=f(Tj); ID=0.25 mA
BR(DSS)
150 °C, 98%
500
400
300
740
720
700
680
[V]
[mJ]
AS
E
200
100
0
20 60 100 140 180
Tj [°C]
660
BR(DSS)
V
640
620
600
580
-50 -10 30 70 110 150
Tj [°C]
Rev. 2.0 page 6 2007-09-10
Page 7
13 Typ. capacitances 14 Typ. Coss stored energy
SPI15N65C3
C =f(V
C [pF]
); VGS=0 V; f =1 MHz E
DS
5
10
4
10
Ciss
3
10
10
10
10
2
1
0
Coss
Crss
0 100 200 300 400 500
VDS [V]
= f(VDS)
oss
12
9
[µJ]
6
oss
E
3
0
0 100 200 300 400 500 600
VDS [V]
Rev. 2.0 page 7 2007-09-10
Page 8
Definition of diode switching characteristics
SPI15N65C3
Rev. 2.0 page 8 2007-09-10
Page 9
PG-TO262-3-1: Outlines
SPI15N65C3
Dimensions in mm/inches:
Rev. 2.0 page 9 2007-09-10
Page 10
SPI15N65C3
A
A
(
s
.
s
o
r
e
.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
ll Rights Reserved.
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office
Warnings
Due to technical requirements components may contain dangerous substances. For information on the type
in question please contact your nearest Infineon Technologies Office
Infineon Technologies Components may only be used in life-support devices or systems with the expres
written approval of Infineon Technologies, if a failure of such components can reasonably be expected t
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/o
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of th
user or other persons may be endangered
www.infineon.com ).
Rev. 2.0 page 10 2007-09-10
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