Datasheet SPD30N08S2L-21 Datasheet (Infineon)

SPD30N08S2L-21

j

g

OptiMOS

â

Power-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

Type Package Ordering Code

SPD30N08S2L-21 P- TO252 -3-11 Q67060-S7414

Marking

2N08L21

Product Summary

V

DS

R

DS(on)

I

D

P- TO252 -3-11

75 V

20.5 mΩ 30 A

Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter

Continuous drain current

T

=25°C

C

T

=100°C

C

1)

Pulsed drain current

T

=25°C

C

Avalanche energy, single pulse

I

=30 A , VDD=25V, RGS=25Ω

D

Repetitive avalanche energy, limited by T

max

Reverse diode dv/dt

I

=30A, VDS=60V, di/dt=200A/µs, T

S

jmax

=175°C

Gate source voltage V Power dissipation

T

=25°C

C

Operating and storage temperature T

Symbol Value Unit

I

D

30 30

I

D puls

E

AS

2)

E

AR

dv/dt

GS

P

tot

T

,

st

120

240 mJ

14

6 kV/µs

±20

136 W

-55... +175

IEC climatic category; DIN IEC 68-1 55/175/56

A

V

°C

Page 1

2002-06-17

Thermal Characteristics

A

SPD30N08S2L-21

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case R Thermal resistance, junction - ambient, leaded R SMD version, device on PCB:

@ min. footprint @ 6 cm

2

cooling area

3)

R

thJC thJ thJA

- 0.7 1.1 K/W

- - 100

-

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

I

=80µA

D

Zero gate voltage drain current

VDS=75V, VGS=0V, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

75 - - V

1.2 1.6 2

-

0.01

75 50

1

µA

=75V, VGS=0V, Tj=125°C

V

DS

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=25A

Drain-source on-state resistance

VGS=10V, ID=25A

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos 2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

= 1.1K/W the chip is able to carry ID= 54A at 25°C, for detailed

thJC

I

GSS

R

DS(on)

R

DS(on)

-

- 1 100 nA

- 19.1 26

- 15.3 20.5

1

100

mΩ

Page 2

2002-06-17

Electrical Characteristics

SPD30N08S2L-21

Parameter

Dynamic Characteristics

Transconductance g

Input capacitance C Output capacitance C

Reverse transfer capacitance C Turn-on delay time t Rise time t Turn-off delay time t Fall time t

Gate Charge Characteristics

Gate to source charge

Q

Gate to drain charge Q Gate charge total Q

Symbol Conditions Values Unit

min. typ. max.

fs

iss oss

rss d(on) r

d(off) f

gs gd g

VDS≥2*ID*R I

=30A

D

VGS=0V, VDS=25V, f=1MHz

VDD=40V, VGS=4.5V,

=30A,

I

D

R

=3.9Ω

G

VDD=60V, ID=30A - 5.1 6.8 nC

VDD=60V, ID=30A,

=0 to 10V

V

GS

DS(on)max

,

23 45 - S

- 1600 2130 pF

- 320 425

- 130 200

- 11 16 ns

- 15 24

- 21 30

- 15 23

- 21 32

- 54 72

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current Inv. diode direct current, pulsed I

Inverse diode forward voltage V Reverse recovery time t Reverse recovery charge Q

(plateau)

S

SM

SD

rr

VDD=60V, ID=30A - 3.4 - V

TC=25°C - - 30 A

- - 120

VGS=0V, IF=30A - 0.9 1.3 V VR=40V, I

di

/dt=100A/µs

F

lS,

=

F

- 52 65 ns

- 122 153 nC

Page 3

2002-06-17

SPD30N08S2L-21

1 Power dissipation

= f (TC)

P

tot

SPD30N08S2L-21

150

W

120 110 100

tot

P

90 80 70 60 50 40 30 20 10

0

0 20 40 60 80 100 120 140 160°C190

2 Drain current

= f (TC)

I

D

parameter: V

SPD30N08S2L-21

32

A

24

D

20

I

16

12

8

4

0

0 20 40 60 80 100 120 140 160°C190

T

C

GS

≥ 10 V

T

C

3 Safe operating area

= f ( VDS )

I

D

parameter : D = 0.01 , T

3

SPD30N08S2L-21

10

A

2

10

D

I

D

R

10

1

0

10

-1

D

I

/

S

D

V

=

)

n

o

(

S

0

10

= 25 °C

C

10

4 Max. transient thermal impedance

= f (tp)

Z

thJC

parameter : D = t

1

SPD30N08S2L-21

10

K/W

0

10

tp = 10.0µs

thJC

-1

Z

10

100 µs

1 ms

10 ms

DC

1

V

DS

10

2

10

-2

-3

-4

10

single pulse

-7

10

/T

p

D = 0.50

0.20

0.10

0.05

0.02

0.01

-6

-5

-4

-3

10

-2

s

t

0

10

p

Page 4

2002-06-17

SPD30N08S2L-21

5 Typ. output characteristic

= f (VDS); Tj=25°C

I

D

parameter: t

SPD30N08S2L-21

75

A

60 55 50

D

I

45 40 35 30 25 20 15 10

5 0

0 0.5 1 1.5 2 2.5 3 3.5 4

P

tot

= 80 µs

p

= 136W

i

g

h

VGS [V]

f

e

d

c

b

a

a 3.0 b 3.3 c 3.5 d 3.8 e 4.0 f 4.3 g 4.5 h 4.8 i 10.0

V

DS

6 Typ. drain-source on resistance

R

DS(on)

parameter: V

R

5

= f (ID)

GS

SPD30N08S2L-21

70

Ω

[V] =

d

3.8

4.0

c

e

f

g

4.3

4.5

4.8

60 55 50

DS(on)

45 40 35 30 25 20 15 10

V

GS

c

5

3.5

0

0 10 20 30 40 50

d

e

h

i

10.0

f

g

h

i

65

A

I

D

7 Typ. transfer characteristics

= f ( VGS ); V

I

D

DS

≥ 2 x I

D

x R

DS(on)max

parameter: tp = 80 µs

60

A

50 45 40

D

I

35 30 25 20 15 10

5 0

0 0.5 1 1.5 2 2.5 3 3.5 4

V V

GS

8 Typ. forward transconductance

= f(ID); Tj=25°C

g

fs

parameter: g

50

S

40

35

fs

g

30

25

20

15

10

5

0

0 5 10 15 20 25 30

fs

40

A

I

D

Page 5

2002-06-17

SPD30N08S2L-21

j

9 Drain-source on-state resistance

R

DS(on)

parameter : I

R

= f (Tj)

= 25 A, VGS = 10 V

D

SPD30N08S2L-21

80

Ω

60

DS(on)

50

40

30

20

10

0

-60 -20 20 60 100 140

98%

typ

°C

10 Typ. gate threshold voltage

V

parameter: V

200

T

j

= f (Tj)

GS(th)

= V

GS

2

DS

V

80 µA

GS(th)

V

1

0.5

0

-60 -20 20 60 100

400 µA

°C

T

180

j

11 Typ. capacitances

C = f (V parameter: V

10

pF

C

10

)

DS

=0V, f=1 MHz

GS

4

3

2

0 5 10 15 20

12 Forward character. of reverse diode

= f (VSD)

I

F

parameter: T

3

SPD30N08S2L-21

10

A

2

C

iss

C

oss

C

rss

V

30

DS

V

10

F

I

1

10

0

10

0 0.4 0.8 1.2 1.6 2 2.4

, tp = 80 µs

Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%)

3

V

SD

Page 6

2002-06-17

SPD30N08S2L-21

13 Typ. avalanche energy

= f (Tj)

E

AS

par.: I

= 30 A , VDD = 25 V, RGS = 25 Ω

D

240

mJ

200 180 160

AS

E

140 120 100

80 60 40 20

0

25 45 65 85 105 125 145

°C

T

14 Typ. gate charge

= f (Q

V

GS

parameter: I

SPD30N08S2L-21

16

V

12

GS

10

V

8

6

4

2

185

j

0

0 10 20 30 40 50 60 70

)

Gate

= 30 A pulsed

D

V

0,2

DS max

0,8 V

DS max

nC

Q

85

Gate

15 Drain-source breakdown voltage

V

(BR)DSS

parameter: I

(BR)DSS

V

= f (Tj)

=10 mA

D

SPD30N08S2L-21

92

V

88 86 84 82 80 78 76 74 72 70 68

-60 -20 20 60 100 140

°C

200

T

j

Page 7

2002-06-17

SPD30N08S2L-21

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Further information

Please notice that the part number is BSPD30N08S2L-21, for simplicity the device is referred to by the term SPD30N08S2L-21 throughout this documentation.

Page 8

2002-06-17